Isolation structures for semiconductor devices including trenches containing conductive material

1. An isolation structure formed in a semiconductor substrate of a first conductivity type, the substrate not including an epitaxial layer, the isolation structure comprising:

a floor isolation region of a second conductivity type opposite to the first conductivity type submerged in the substrate, an uppermost surface of the floor isolation region extending laterally in a direction parallel to a surface of the substrate at a depth below the surface of the substrate;

a first trench including walls lined with a dielectric material and containing a conductive material, the first trench extending downward from the surface of the substrate, the dielectric material and the conductive material of the first trench overlapping onto a portion of the floor isolation region at the depth below the surface of the substrate, the first trench and the floor isolation region electrically isolating a pocket of the first conductivity type from the substrate, the uppermost surface of the floor isolation region defining a lower extent of the pocket;

a dielectric filled trench disposed within the pocket and extending downward from the surface of the substrate;

a second floor isolation region of the second conductivity type submerged in the substrate and laterally displaced from the floor isolation region;

a second trench including walls lined with a second dielectric material and containing a second conductive material, the second trench extending downward from the surface of the substrate, the second dielectric material and the second conductive material of the second trench overlapping onto the second floor isolation region, the second trench and the second floor isolation region electrically isolating a second pocket of the first conductivity type from the substrate; and

a buried deep implanted region of the first conductivity type disposed between the floor isolation region and the second floor isolation region, the buried deep implanted region completely surrounded by material of the substrate, the material of the substrate extending over the deep buried implanted region.

2. The isolation structure of claim 1 wherein the first trench is an annular trench.

3. The isolation structure of claim 1 wherein a bottom of the dielectric filled trench is located above a top of the floor isolation region.

4. The isolation structure of claim 1 wherein the first trench is wider than the dielectric filled trench.

5. The isolation structure of claim 1 wherein the conductive material is in electrical contact with the floor isolation region.

6. The isolation structure of claim 5 wherein the conductive material includes doped polysilicon.

7. The isolation structure of claim 1 wherein the dielectric material electrically isolates the conductive material from the pocket.

8. The isolation structure of claim 1 wherein the dielectric material electrically isolates the conductive material from the substrate.

9. The isolation structure of claim 1 wherein the dielectric material is an oxide.

10. The isolation structure of claim 1 further comprising a second dielectric filled trench disposed within the second pocket and extending downward from the surface of the substrate.

11. The isolation structure of claim 10 wherein a bottom of the second dielectric filled trench is located above a top of the second floor isolation region.

12. An isolation structure formed in a semiconductor substrate of a first conductivity type, the substrate not including an epitaxial layer, the isolation structure comprising:

a first floor isolation region of a second conductivity type opposite to the first conductivity type submerged in the substrate;

a first trench including walls lined with a dielectric material and containing a conductive material, the first trench extending downward from a surface of the substrate, the dielectric material and the conductive material of the first trench overlapping onto the floor isolation region, the first trench and the floor isolation region electrically isolating a first pocket of the first conductivity type from the substrate;

a second floor isolation region of the second conductivity type submerged in the substrate and laterally displaced from the first floor isolation region;

a second trench including walls lined with a second dielectric material and containing a second conductive material, the second trench extending downward from the surface of the substrate, the second dielectric material and the second conductive material of the second trench overlapping onto the second floor isolation region, the second trench and the second floor isolation region electrically isolating a second pocket of the first conductivity type from the substrate; and

a buried deep implanted region of the first conductivity type disposed between the first floor isolation region and the second floor isolation region, the buried deep implanted region completely surrounded by material of the substrate, the material of the substrate extending over the deep buried implanted region.

13. The isolation structure of claim 12 further comprising a dielectric filled trench disposed within the first pocket and extending downward from the surface of the substrate.

14. The isolation structure of claim 13 wherein a bottom of the dielectric filled trench is located above a top of the first floor isolation region.

15. The isolation structure of claim 13 wherein the first trench is wider than the dielectric filled trench.

16. The isolation structure of claim 12 further comprising a dielectric filled trench disposed within the second pocket and extending downward from the surface of the substrate.

17. The isolation structure of claim 16 wherein a bottom of the dielectric filled trench is located above a top of the second floor isolation region.

18. The isolation structure of claim 16 wherein the second trench is wider than the dielectric filled trench.

19. An isolation structure formed in a semiconductor substrate of a first conductivity type, the substrate not including an epitaxial layer, the isolation structure comprising:

a first floor isolation region of a second conductivity type opposite to the first conductivity type submerged in the substrate;

a first trench including walls lined with a dielectric material and containing a conductive material, the first trench extending downward from a surface of the substrate, the dielectric material and the conductive material of the first trench overlapping onto the floor isolation region, the first trench and the floor isolation region electrically isolating a first pocket of the first conductivity type from the substrate;

a first dielectric filled trench disposed within the first pocket and extending downward from the surface of the substrate;

a second floor isolation region of the second conductivity type submerged in the substrate and laterally displaced from the first floor isolation region;

a second trench including walls lined with a second dielectric material and containing a second conductive material, the second trench extending downward from the surface of the substrate, the second dielectric material and the second conductive material of the second trench overlapping onto the second floor isolation region, the second trench and the second floor isolation region electrically isolating a second pocket of the first conductivity type from the substrate;

a second dielectric filled trench disposed within the second pocket and extending downward from the surface of the substrate; and

a buried deep implanted region of the first conductivity type disposed between the first floor isolation region and the second floor isolation region, the buried deep implanted region completely surrounded by material of the substrate, the material of the substrate extending over the deep buried implanted region.