Method for fabricating a monolithic optoelectronic device
View Patent ↗A monolithic optoelectronic device has a spot-size converter optically connected to a waveguide. The overclad extending over the core of the waveguide is thinner and differently doped than the overclad of the spot-size converter. This structure can be made by applying a process of etching and enhanced selective area regrowth to create regions of the overclad of different thickness or doping. The spot-size converter core is made of a different material than the waveguide core by using etching and enhanced selective area regrowth.
1. A method for fabricating a monolithic optoelectronic device having a waveguide containing a core, an overclad adjacent to the core, and at least one electrode connected to at least a portion of the waveguide; and a spot-size converter optically connected to the waveguide, the spot-size converter containing a core and an overclad adjacent to the core; said method comprising:
providing a wafer having a core for defining the cores of the waveguide and the spot-size converter, and an overclad adjacent to the core and made of a highly-doped semiconductor material;
placing a mask on the wafer covering those areas of the overclad on which the at least one electrode of the waveguide are to be formed;
etching away at least a portion of areas of the overclad that are not covered by the mask;
replacing the etched areas of the overclad with semiconductor material that is less highly doped and having areas of different thickness, such that the overclad of the waveguide is thinner than the overclad of the spot-size converter; and
forming the at least one electrode of the waveguide on selected unetched areas of the overclad.
2. The method of claim 1 , wherein the electrodes comprise a traveling wave electrode.
3. The method of claim 1 , wherein the monolithic optoelectronic device comprises a Mach-Zehnder modulator, and wherein the waveguide is a component of the Mach-Zehnder modulator.
4. The method of claim 1 , wherein the step of replacing the etched areas of the overclad comprises regrowth of the semiconductor material to selectively create areas of the overclad of different thickness.
5. The method of claim 1 , wherein the overclad of the waveguide comprises a series of p-doped channels.
6. The method of claim 1 , wherein the core of the spot-size converter is made of a different material than the core of the waveguide.
7. The method of claim 1 , wherein the step of replacing the etched areas further comprises providing a ramp-like thickness transition between the overclad of the spot-size converter and the overclad of the waveguide.
8. A method for fabricating a monolithic optoelectronic device having a waveguide containing a core, an overclad adjacent to the core, and at least one electrode connected to at least a portion of the waveguide; and a spot-size converter optically connected to the waveguide, the spot-size converter containing a core and an overclad adjacent to the core; said method comprising:
providing a wafer having a core for defining the cores of the waveguide and the spot size converter, and an overclad adjacent to the core made of intentionally doped InP;
placing a mask on the wafer covering those areas of the overclad on which the at least one electrode of the waveguide are to be formed;
etching away at least a portion of areas of the overclad that are not covered by the mask;
replacing the etched areas of the overclad with non intentionally doped InP having areas of different thickness, so that the overclad of the waveguide is thinner than the overclad of the spot-size converter; and
forming the at least one electrode of the waveguide on selected unetched areas of the overclad.
9. The method of claim 8 , wherein the monolithic optoelectronic device comprises a Mach-Zehnder modulator, and wherein the waveguide is a component of the Mach-Zehnder modulator.
10. The method of claim 8 , wherein the step of replacing the etched areas of the overclad comprises regrowth of the semiconductor material to selectively create areas of the overclad of different thickness.
11. The method of claim 8 , wherein the overclad of the waveguide comprises a series of p-doped channels.
12. The method of claim 8 , wherein the core of the spot-size converter is made of a different material than the core of the waveguide.
13. The method of claim 8 , wherein the step of replacing the etched areas further comprises providing a ramp-like thickness transition between the overclad of the spot-size converter and the overclad of the waveguide.
14. A method for fabricating a monolithic optoelectronic device having a waveguide and a spot-size converter optically connected to the waveguide; said method comprising:
providing a wafer having a core defining a waveguide core and a spot size converter core, and an overclad adjacent to the core and made of a doped semiconductor material;
placing a mask on the wafer covering those areas of the overclad on which electrodes of the waveguide are to be formed;
etching away at least a portion of areas of the overclad that are not covered by the mask;
replacing the etched areas of the overclad with semiconductor material that is non intentionally doped or less highly doped than a remainder of the overclad, via regrowth to selectively create portions of the overclad of different thickness, such that a first portion of the overclad associated with the waveguide is thinner than a second portion of the overclad associated with the spot-size converter; and
forming the electrodes of the waveguide on selected unetched areas of the overclad.
15. The method of claim 14 , wherein the electrodes comprise a traveling wave electrode.
16. The method of claim 14 , wherein the monolithic optoelectronic device comprises a Mach-Zehnder modulator, wherein the waveguide is a component of the Mach-Zehnder modulator.
17. The method of claim 14 , wherein the portion of the overclad associated with the waveguide comprises a series of p-doped channels defined by the unetched areas of the overclad.
18. The method of claim 14 , wherein the portions of the core associated with the spot-size converter are made of a different material than the portions of the core associated with the waveguide.
19. The method of claim 14 , wherein the step of replacing the etched areas further comprises providing a ramp-like thickness transition in the overclad, extending at a non-perpendicular angle between the portion of the overclad associated with the spot-size converter and the portion of the overclad associated with the waveguide.
20. The method of claim 14 , wherein the monolithic optoelectronic device is at least one of a laser, an optical amplifier, an electro-absorption modulator, a photo-detector, and a modulator for higher order modulation formats.