Group I-III-VI material nano-crystalline core and group I-III-VI material nano-crystalline shell pairing
View Patent ↗Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, group I-III-VI semiconductor material at least partially surrounds the nano-crystalline core.
1. A method of fabricating a semiconductor structure, the method comprising:
forming a first solution comprising a gallium (Ga) source and a silver (Ag) source;
adding sulfur (S) to the first solution to form a second solution comprising the Ga source, the Ag source, and the sulfur; and
heating the second solution to form a plurality of silver gallium sulfide (AGS) nano-particles.
2. The method of claim 1 , wherein forming the first solution comprises dissolving gallium acetylacetonate (ACAC) and silver nitrate (AgNO 3 ) in dodecanethiol (DDT) in the presence of a mixture of carboxylic acids.
3. The method of claim 2 , further comprising:
degassing the first solution while heating the first solution at a temperature of approximately 100 degrees Celsius.
4. The method of claim 3 , further comprising:
subsequent to the degassing, heating the first solution to a temperature of approximately 150 degrees Celsius under an atmosphere of argon (Ar).
5. The method of claim 1 , wherein forming the second solution comprises rapidly injecting the sulfur into the first solution.
6. The method of claim 1 , further comprising:
heating the second solution to a temperature of approximately 250 degrees Celsius.
7. The method of claim 1 , wherein forming the plurality of AGS nano-particles comprises forming a plurality of particles of stoichiometry approximately AgGaS 2 .
8. The method of claim 1 , wherein forming the first solution comprises using a Ga source to Ag source ratio of at least approximately 1:2.