Imaging device and image acquisition device
An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. The charge detection circuit includes a reset transistor that sets the pixel electrode at an initialization voltage at predetermined timing. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the initialization voltage and the counter voltage.
1. An imaging device, comprising:
at least one unit pixel cell, each of the at least one unit pixel cell comprising:
a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface;
a pixel electrode located on the first surface;
a shield electrode located on the first surface, the shield electrode being separated from the pixel electrode, a shield voltage being applied to the shield electrode;
an upper electrode located on the second surface, the upper electrode opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode;
a charge accumulation node electrically connected to the pixel electrode; and
a charge detection circuit electrically connected to the charge accumulation node, wherein
the charge detection circuit includes a reset transistor that sets the pixel electrode at an initialization voltage at predetermined timing, and
an absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the initialization voltage and the counter voltage.
2. The imaging device according to claim 1 , wherein
the at least one unit pixel cell comprises unit pixel cells, and
the unit pixel cells are arranged one-dimensionally or two-dimensionally.
3. The imaging device according to claim 1 , wherein
the initialization voltage is lower than the counter voltage, and
the shield voltage is lower than the initialization voltage.
4. The imaging device according to claim 3 , wherein the shield voltage is a negative voltage.
5. The imaging device according to claim 1 , wherein
the initialization voltage is higher than the counter voltage, and
the shield voltage is higher than the initialization voltage.
6. The imaging device according to claim 1 , wherein each of the at least one unit pixel cell does not comprise a micro lens on a side of the upper electrode opposite to the photoelectric conversion layer.
7. An image acquisition device, comprising:
an illumination system that irradiates an object with each of beams in sequence, incident directions of the beams with respect to the object being different from each other;
the imaging device according to claim 1 located at a position where the beams passing through the object are inputted, the imaging device acquiring images corresponding to the beams respectively, each of the images having a first resolution; and
an image processor that synthesizes the images to generate a synthetic image having a second resolution higher than the first resolution.
8. The image acquisition device according to claim 7 , wherein the imaging device includes an arrangement surface for holding the object, the arrangement surface being located on a side of the upper electrode opposite to the photoelectric conversion layer.
9. The image acquisition device according to claim 7 , wherein the image processor synthesizes the images by interpolating the images with each other.