IP Library Granted Patent US 9,599,727
Granted Patent B2
US 9,599,727 · App. 14/879,650 · Granted Mar 21, 2017

Fabrication of a scintillator material of elpasolite type

Inventors: Vladimir Ouspenski (Saint-Pierre les Nemours, FR); Samuel Blahuta (Fontenay-Sous-Bois, FR); Raphael Huchet (Montgeron, FR); Julien Lejay (Rueil Malmaison, FR)
Assignee: SAINT-GOBAIN CRISTAUX ET DETECTEURS
G01T1/2023C09K11/7766C30B11/00C30B11/02C30B11/04C30B15/00C30B15/04C30B29/12
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Quick Facts
Patent No.
US 9,599,727
App. No.
14/879,650
Granted
Mar 21, 2017
Kind
B2
Abstract

A process for fabricating a crystalline scintillator material with an elpasolite structure that has a theoretical composition of A 2 BC (1-y) M y X (6-y) can include conducting crystallization by cooling from a melt bath including r moles of A and s moles of B. A is chosen from Cs, Rb, K, and Na. B is chosen from Li, K, and Na. C is chosen from athe rare earth elements, Al, and Ga. M is chosen from the alkaline earth elements. X is chosen from F, Cl, Br, and I, and y represents the atomic fraction of substitution of C by M and is in the range extending from 0 to 0.05. The melt bath can be in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. The crystals formed therefrom can have improved scintillation properties.

Claims (87)

1. A process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A 2 BC (1-y) M y X (6-y) , comprising conducting crystallization by cooling from a melt bath comprising r moles of A and s moles of B,

wherein:

A is chosen from among Cs, Rb, K, Na;

B is chosen from among Li, K, Na and comprises Li;

C is chosen from among the rare earths, Al, and Ga;

M is chosen from among the alkaline earths; and

X is chosen from among F, Cl, Br, and I and comprises Cl or Br or I, y representing an atomic fraction of substitution of C by M and being in a range extending from 0 to 0.05;

wherein the crystalline scintillator material is doped with an element activating scintillation;

wherein the melt bath in contact with the material contains A and B in such a way that 2s/r is above 1; and

wherein a first two-thirds in volume of growth of the crystalline material comprises less than 10% in volume of a phase different to that of the elpasolite.

2. The process as claimed in claim 1 , wherein 2s/r is above 1.05.

3. The process as claimed in claim 1 , wherein 2s/r is above 1.15.

4. The process as claimed in claim 1 , wherein 2s/r is above 1.25.

5. The process as claimed in claim 1 , wherein 2s/r is above 1.35.

6. The process as claimed in claim 1 , wherein 2s/r is above 1.5.

7. The process as claimed in claim 1 , wherein 2s/r is below 10.

8. The process as claimed in claim 1 , wherein 2s/r is below 5.

9. The process as claimed in claim 1 , wherein 2s/r is below 3.

10. The process as claimed in claim 1 , wherein 2s/r is enough for a ratio of a double of an atomic fraction of B-type element to an atomic fraction of the A-type element in the crystalline material to be of at least 0.97.

11. The process as claimed in claim 1 , wherein M is chosen from among Ca, Mg, Sr, and Ba.

12. The process as claimed in claim 1 , wherein C comprises at least one activating rare earth chosen from among Ce, Pr, Eu, Tb and Nd, wherein a ratio of an atomic fraction of the at least one activating rare earth to a sum of atomic fractions of elements C and M in the crystalline material is above 0.00001 and below or equal to 0.1.

13. The process as claimed in claim 1 , wherein 2s/r is not enough to generate formation of a phase of B 3 C (1-y) M y X 6 at start of the crystallization.

14. The process as claimed in claim 1 , wherein B is Li.

15. The process as claimed in claim 1 , wherein the rare earth comprises La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or Y.

16. The process as claimed in claim 1 , wherein A comprises Cs and B comprises Li.

17. The process as claimed in claim 16 , wherein C comprises La and X comprises Br.

18. The process as claimed in claim 17 , wherein C is at over 80% in moles lanthanum and X is at over 80% in moles bromine.

19. The process as claimed in claim 16 , wherein C comprises Y and X comprises Cl.

20. The process as claimed in claim 19 , wherein C is at over 80% in moles Y and in that X is at over 80% in moles Cl.

21. The process as claimed in claim 1 , wherein 2t/r is above 1, t representing the number of moles of C in the bath.

22. The process as claimed in claim 1 , wherein:

2t/r is above 1, t representing the number of moles of C in the bath;

C comprises La, wherein C is at over 80% in moles La;

X comprises Br, wherein X is at over 80% in moles Br; and

2s/r is above 1.05.

23. The process as claimed in claim 1 , wherein the process is a monocrystalline growth process.

24. The process as claimed in claim 23 , wherein the crystalline material is a monocrystalline material.

25. The process as claimed in claim 24 , wherein the process is a Czochralski type, wherein the first two-thirds in volume of the growth of the monocrystalline material do not contain any phase different to that of the elpasolite.

26. The process as claimed in claim 23 , wherein the crystalline material is an ingot, wherein a first two-thirds in volume of the monocrystalline growth comprises less than 10% in volume of a phase different to that of the elpasolite material.

27. The process as claimed in claim 26 , wherein the crystalline material is a monocrystalline material, and the first two-thirds in volume of the monocrystalline growth of the monocrystalline material do not contain any phase different to that of the elpasolite material.

28. The process as claimed in claim 1 , wherein the crystalline material is made from incongruent fusion.

29. A crystalline scintillator material, wherein the crystalline scintillator material:

is doped with an element that activates scintillation;

has a structure of an elpasolite type of a theoretical composition A 2 BC (1-y) M y X (6-y) ; and has a real formula A a B b C c M m X x , wherein

A is chosen from among Cs, Rb, K, Na;

B is chosen from among Li, K, Na and comprises Li;

C is chosen from among the rare earths, Al, Ga;

M is chosen from among the alkaline earths; and

X is chosen from among F, Cl, Br, I and comprises Cl or Br or I;

y representing an atomic fraction of substitution of C by M and being in a range extending from 0 to 0.05, a, b, c, m, and x representing respective atomic fractions of A, B, C, M, and X, a 2b/a ratio being in a range extending from 0.97 to 1.4, wherein the crystalline scintillator material is monocrystalline.

30. The crystalline scintillator material as claimed in claim 29 , wherein C contains at least one activating rare earth chosen from among Ce, Pr, Eu, Tb, and Nd, wherein a ratio of an atomic fraction of the at least one activating rare earth to a sum of the atomic fractions of elements C and M is above 0.00001 and below or equal to 0.1.

31. The crystalline scintillator material as claimed in claim 29 , characterized in that A comprises Cs.

32. The crystalline scintillator material as claimed in claim 31 , wherein C comprises La and X comprises Br.

33. The crystalline scintillator material as claimed in claim 32 , wherein C is at over 80% in moles lanthanum and X is at over 80% in moles bromine.

34. The crystalline scintillator material as claimed in claim 32 , wherein the 2b/a ratio is in the range extending from 1.1to 1.4.

35. The crystalline scintillator material as claimed in claim 31 , wherein C comprises Y and X comprises Cl.

36. The crystalline scintillator material as claimed in claim 35 , wherein C is at over 80% in moles Y and X is at over 80% in moles Cl.

37. The crystalline scintillator material as claimed in claim 29 , wherein;

A comprises Cs;

C comprises La and Ce; and

X comprises Br.

38. The crystalline scintillator material as claimed claim 29 , wherein C comprises La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or Y.

39. The crystalline scintillator material as claimed in claim 29 , wherein A is Cs, B is Li, C is a mixture of Y and Ce, and X is Cl.

40. The crystalline scintillator material as claimed in claim 29 , wherein A is Cs, B is Li, C is a mixture of La and Ce, and X is Br.

41. The crystalline scintillator material as claimed in claim 29 , wherein A is Cs, B is Li, C is a mixture of La and Ce, and X is Cl.

42. The crystalline scintillator material as claimed in claim 29 , wherein A is a mixture of Cs and Rb, B is Li, C is a mixture of La and Ce, and X is Br.

43. The crystalline scintillator material as claimed in claim 29 , wherein A is Cs, B is Li, C is a mixture of La and Ce, and X is a mixture of Cl and Br.

44. The crystalline scintillator material as claimed in claim 29 , wherein A is Cs, B is Li, C is a mixture of Y and Ce, and X is a mixture of Cl and Br.

45. The crystalline scintillator material as claimed in claim 29 , wherein A is Cs, B is Li, C is a mixture of La, Y and Ce, and X is Cl.

46. The crystalline scintillator material as claimed in claim 29 , wherein A is a mixture of Cs and Na, B is a mixture of Li and Na, C is a mixture of Y and Ce, and X is Cl.

47. The crystalline scintillator material as claimed in claim 29 , wherein A is Cs, B is Li, C is a mixture of Y and Ce, and X is F.

48. The crystalline scintillator material as claimed in claim 29 , wherein the crystalline material is made from incongruent fusion.

49. An ingot comprising a crystalline scintillator material of claims 48 , wherein a first two-thirds in volume of a monocrystalline growth of the ingot comprises less than 10% in volume of a phase different to that of the elpasolite material.

50. The ingot of claim 49 , wherein the first two-thirds in volume of the monocrystalline growth does not contain any phase different to that of the elpasolite material.

51. The crystalline scintillator material as claimed in claim 29 , wherein the crystalline scintillator material has a scintillation energy resolution below 6%, measured with a source of 137 Cs gamma rays of 662 keV.

52. An ingot comprising a crystalline scintillator material of claim 29 .

53. A monocrystalline scintillator material, wherein the monocrystalline scintillator material

is doped with an element that activates scintillation;

has a structure of an elpasolite type of a theoretical composition A 2 BC (1-y) M y X (6-y) ; and has a real formula A a B b C c M m X x , wherein

A comprises Cs;

B comprises Li;

C is chosen from among the rare earths, Al, Ga;

M is chosen from among the alkaline earths; and

X comprises Cl or Br;

y representing an atomic fraction of substitution of C by M and being in a range extending from 0 to 0.05, a, b, c, m, and x representing respective atomic fractions of A, B, C, M, and X, a 2b/a ratio being in a range extending from 0.97 to 1.4.

54. The monocrystalline scintillator material of claim 53 , wherein C comprises La and X comprises Br.

55. The monocrystalline scintillator material of claim 53 , wherein C comprises Y and X comprises Cl.

Assignments (3)
INTELLECTUAL PROPERTY SECURITY AGREEMENT SUPPLEMENT Recorded May 8, 2026
From: LUXIUM SOLUTIONS, LLC
To: GOLUB CAPITAL MARKETS LLC, AS COLLATERAL AGENT
Reel/Frame 075574/0443 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 22, 2023
From: SAINT-GOBAIN CRISTAUX ET DETECTEURS
To: LUXIUM SOLUTIONS, LLC
Reel/Frame 063066/0758 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2015
From: OUSPENSKI, VLADIMIR; BLAHUTA, SAMUEL; HUCHET, RAPHAEL; LEJAY, JULIEN
To: SAINT-GOBAIN CRISTAUX ET DETECTEURS
Reel/Frame 037370/0514 →
Priority Claims (1)
FR 13 53354 · Apr 12, 2013 · national
Continuity (2)
Continuation In Part PCTFR2014050893 · Apr 11, 2014
Related Publication 20160103232A1 · Apr 14, 2016