INTERDIGITATED TRANSDUCERS AND REFLECTORS FOR SURFACE ACOUSTIC WAVE DEVICES WITH NON-UNIFORMLY SPACED ELEMENTS
A surface acoustic wave (SAW) device includes: a substrate, an interdigitated transducer including a plurality of interdigitated fingers disposed on a first surface of the substrate, and a reflector including a plurality of gratings also disposed on the first surface. At least one of: (1) a first group of the interdigitated fingers has a first finger pitch and a first finger metal pitch ratio, and a second group of the interdigitated fingers has a second finger pitch different from the first metal pitch and a second metal pitch ratio different from the first metal pitch ratio; and (2) a first group of the gratings has a first grating pitch and a first grating metal pitch ratio, and a second group of the gratings has a second grating metal pitch different from the first grating metal pitch and a second grating metal pitch ratio different from the first grating metal pitch ratio.
1 . A surface acoustic wave (SAW) device, comprising:
a substrate; and
at least a first interdigitated transducer disposed on a first surface of the substrate,
wherein the first interdigitated transducer includes a plurality of interdigitated fingers, including at least a first group of first interdigitated fingers having a first finger pitch and a second group of second interdigitated fingers having a second finger pitch which is different from the first finger pitch, and
wherein the first group of first interdigitated fingers has a first finger metal pitch ratio, and the second group of second interdigitated fingers has a second finger metal pitch ratio which is different from the first finger metal pitch ratio, and
wherein the first group of first interdigitated fingers has a first surface mode resonance frequency, and the second group of second interdigitated fingers has a second surface mode resonance frequency which is substantially the same as the first surface mode resonance frequency.
2 . The SAW device of claim 1 , wherein the first interdigitated transducer further includes a third group of third interdigitated fingers having a third finger pitch which is different from the first finger pitch and the second finger pitch, and having a third finger metal pitch ratio which is different from the first finger metal pitch ratio and the second finger metal pitch ratio, and wherein the third group of third interdigitated fingers has a third surface mode resonance frequency which is substantially the same as the first surface mode resonance frequency.
3 . The SAW device of claim 1 , wherein finger pitches between pairs of interdigitated fingers in the first interdigitated transducer are all different from each other and wherein finger metal pitch ratios of the pairs of interdigitated fingers are all different from each other, and wherein each of the pairs of interdigitated fingers has a corresponding surface mode resonance frequency which is substantially the same as the first surface mode resonance frequency.
4 . The SAW device of claim 3 , wherein the finger pitches of the groups of interdigitated fingers are pseudorandomly distributed between a minimum finger pitch and a maximum finger pitch.
5 . The SAW device of claim 1 , wherein the finger metal pitch ratios of the groups of interdigitated fingers are pseudorandomly distributed between a minimum finger metal pitch ratio and a maximum finger metal pitch ratio.
6 . The SAW device of claim 1 , further comprising at least one reflector disposed on the first surface of the substrate, wherein the at least one reflector comprises a plurality of gratings, including a first group of first gratings have a first grating pitch and a first grating metal pitch ratio, and a second group of second gratings have a second grating pitch and a second grating metal pitch ratio, and
wherein the first group of first gratings has a first grating resonance frequency, and the second group of second gratings has a second grating resonance frequency which is substantially the same as the first grating resonance frequency.
7 . The SAW device of claim 1 , further comprising a second interdigitated transducer disposed on a first surface of the substrate, separated and spaced apart from the first interdigitated transducer by a delay line, wherein the second interdigitated transducer includes a second plurality of interdigitated fingers, including at least a third group of third interdigitated fingers having a third finger pitch and a fourth group of fourth interdigitated fingers having a fourth finger pitch which is different from the third finger pitch, and
wherein the third group of third interdigitated fingers has a third finger metal pitch ratio, and the fourth group of fourth interdigitated fingers has a fourth finger metal pitch ratio which is different from the third finger metal pitch ratio, and
wherein the third group of third interdigitated fingers has a third resonance frequency, and the fourth group of fourth interdigitated fingers has a fourth resonance frequency which is substantially the same as the third resonance frequency.
8 . The SAW device of claim 7 , wherein the first resonance frequency is substantially the same as the third resonance frequency.
9 . The SAW device of claim 7 , further comprising at least one reflector disposed on the first surface of the SAW device, wherein the at least one reflector comprises a plurality of gratings, including a first group of first gratings having a first grating pitch and a first grating metal pitch ratio, and a second group of second gratings having a second grating pitch and a second grating metal pitch ratio, and
wherein the first group of first gratings have a first grating resonance frequency, and the second group of second gratings have a second grating resonance frequency which is substantially the same as the first grating resonance frequency.
10 . The SAW device of claim 1 , wherein the substrate comprises a hybrid wafer substrate comprising at least a base layer comprising a first material, and a top layer comprising a second material different from the first material.
11 . The SAW device of claim 10 , wherein the base layer comprises one selected from the group consisting of silicon, sapphire and glass, and wherein the top layer comprises one selected from the group consisting of LiTaO3 and LiNbO3.
12 . A surface acoustic wave (SAW) device, comprising:
a substrate;
at least a first interdigitated transducer including a plurality of interdigitated fingers disposed on a first surface of the substrate; and
at least a first reflector including a plurality of gratings disposed on the first surface of the substrate,
wherein at least one of:
(1) a first group of the interdigitated fingers of the first interdigitated transducer has a first finger pitch and a first finger metal pitch ratio, and a second group of interdigitated fingers has a second finger pitch different from the first metal pitch and a second metal pitch ratio which is different from the first metal pitch ratio; and the first group of interdigitated fingers has a first surface mode resonance frequency, and the second group of interdigitated fingers has a second surface mode resonance frequency which is substantially the same as the first resonance frequency, and
(2) a first group of the gratings of the first reflector has a first grating pitch and a first grating metal pitch ratio, and a second group of the gratings has a second grating metal pitch different from the first grating metal pitch and a second grating metal pitch ratio which is different from the first grating metal pitch ratio, wherein the first group of the gratings has a first grating surface mode resonance frequency, and the second group of the gratings has a second grating surface mode resonance frequency which is substantially the same as the first grating surface mode resonance frequency.
13 . The SAW device of claim 12 , wherein at least one of:
(1) a third group of the interdigitated fingers has a third finger pitch different from the first metal pitch and a first finger metal pitch ratio which is different from the first metal pitch ratio; and
(2) a third group of the gratings of the first reflector has a third grating pitch different from the first grating metal pitch and a third grating metal pitch ratio which is different from the first grating metal pitch ratio.
14 . The SAW device of claim 12 , wherein at least one of:
(1) surface mode resonance frequencies of the interdigitated fingers of the first interdigitated transducer are all substantially the same as each other, and
(2) grating surface mode resonance frequencies of the gratings of the first reflector are all substantially the same as each other.
15 . The SAW device of claim 12 , wherein finger pitches between pairs of interdigitated fingers in the first interdigitated transducer are all different from each other and wherein finger metal pitch ratios of the pairs of interdigitated fingers are all different from each other.
16 . The SAW device of claim 15 , wherein the finger pitches between the pairs of interdigitated fingers are pseudorandomly distributed between a minimum finger pitch and a maximum finger pitch.
17 . The SAW device of claim 16 , wherein the finger metal pitch ratios of the pairs of interdigitated fingers are pseudorandomly distributed between a minimum finger metal pitch ratio and a maximum finger metal pitch ratio.
18 . The SAW device of claim 17 , wherein the substrate comprises a hybrid wafer substrate comprising at least a base layer comprising a first material and a top layer comprising a second material different from the first material.