Surface treatment of a semiconductor light emitting device
View Patent ↗A semiconductor light-emitting device includes a semiconductor structure having a light-emitting region. A surface of the semiconductor structure has flattened peaks.
1. A semiconductor light-emitting device, comprising:
a semiconductor structure comprising a light-emitting region, wherein the semiconductor structure comprises:
an n-type region;
a p-type region;
the light-emitting region between the n- and the p-type regions;
an n-contact disposed on the n-type region; and
a p-contact disposed on the p-type region, wherein the n-contact is insulated by a gap from the active region, the p-type region, and the p-contact,
wherein a surface of the semiconductor structure comprises flattened peaks.
2. The device of claim 1 , wherein each flattened peak comprises a flat top.
3. The device of claim 1 , further comprising a wavelength converting material over the surface.
4. The device of claim 1 , further comprising a mount, wherein the semiconductor structure is attached to the mount.
5. The device of claim 1 , wherein the surface comprises a surface of the n-type region.
6. The device of claim 1 , wherein the gap is filled with an insulating material.
7. The device of claim 1 , wherein the flattened peaks are formed by etching the surface and then treating the surface with plasma.
8. A light-emitting device, comprising:
a semiconductor structure, comprising:
an n-type region, wherein a surface of the n-type region comprises flattened peaks;
a p-type region;
a light-emitting region between the n- and the p-type regions;
an n-contact to the n-type region; and
a p-contact to the p-type region wherein the n-contact is insulated by a gap from the active region, the p-type region, and the p-contact;
a wavelength converting material over the surface of the n-type region; and
a mount supporting the semiconductor region.