Calibration of semiconductor metrology systems
A method of cleaning calibration and other substrates that improves the correlation of measurements from calibration and product substrates and increases the useful life of the calibration substrates is herein disclosed. By exposing a calibration substrate to ultraviolet light, a reaction is triggered that results in the cleaning of the contaminants from the calibration substrate. For instance, monatomic oxygen is introduced to contaminants on the surface of a calibration substrate to remove the contaminants without inducing modifications in the substrate itself. Through the cleaning process, the temperature of the calibration substrate may be controlled to limit adverse effects caused by the overheating of the calibration substrate.
1. A method for treatment of calibration substrates used in a calibration process, the method comprising:
recording a plurality of measurements of at least one characteristic of a first calibration substrate measured by one or more measuring tools over a predetermined period of time;
recording a plurality of measurements of the at least one characteristic of product substrates measured by the one or more measuring tools over the predetermined period of time;
directing ultraviolet light, a plurality of times during the predetermined period of time, to a surface of the first calibration substrate while maintaining the temperature of the first calibration substrate below a predetermined temperature threshold, thereby removing contaminants from the surface of the first calibration substrate;
establishing a cleaning limit for calibration substrates based on the recorded measurements of the first calibration substrate and the product substrates where a difference criterion between the calibration substrate and product substrate measurements has been exceeded, wherein the cleaning limit is a number of cleanings; and
directing ultraviolet light to the surface of a second calibration substrate until the cleaning limit is reached;
upon reaching the cleaning limit, removing the second calibration substrate from the calibration process.
2. The method of claim 1 , wherein the ultraviolet light has wavelength between the range of approximately 185 nm and 254 nm.
3. The method of claim 1 , wherein the predetermined temperature threshold is approximately 50° C.
4. The method of claim 1 , further comprising applying a cooling gas to the first calibration substrate while directing ultraviolet light to the surface of the first calibration substrate.
5. The method of claim 1 , further comprising:
monitoring a temperature of the first calibration substrate while directing ultraviolet light to the surface; and
terminating the ultraviolet light if the temperature of the first calibration substrate reaches the predetermined temperature threshold.
6. The method of claim 1 , wherein the contaminants are part of a molecular airborne contaminant layer.
7. The method of claim 6 , wherein the molecular airborne contaminant layer is formed on an oxide layer of the first calibration substrate.
8. The method of claim 6 , wherein the molecular airborne contaminant layer is about 3-5 angstroms thick.
9. The method of claim 1 , wherein the ultraviolet light is produced by a mercury vapor lamp.
10. The method of claim 1 , wherein the ultraviolet light is directed to the first calibration substrate for less than 50 seconds for each of the plurality of times.
11. A method for treatment of calibration substrates used in a calibration process, the method comprising:
recording a plurality of measurements, of at least one characteristic, of a first calibration substrate measured by one or more measuring tools over a period of time;
recording a plurality of measurements, of the at least one characteristic, of product substrates measured by the one or more measuring tools over the period of time;
directing electromagnetic radiation to a surface of the first calibration substrate while maintaining the temperature of the first calibration substrate below a predetermined temperature threshold, thereby removing contaminants from the surface of the first calibration substrate;
based on differences between the measured at least one characteristic of the first calibration substrate and the measured at least one characteristic of the product substrates, establishing a cleaning limit for calibration substrates, wherein the cleaning limit is a number of cleanings;
directing electromagnetic radiation to the surface of a second calibration substrate until the cleaning limit is reached; and
upon reaching the cleaning limit, removing the second calibration substrate from the calibration process.