Gyroscope and devices with structural components comprising HfO2-TiO2 material
View Patent ↗Disclosed are devices, materials, systems, and methods, including a device that includes one or more structural components, at least one of the one or more structural components comprising substantially HfO 2 —TiO 2 material. Also disclosed is a hemispherical resonator that includes a hemisphere including one or more structural components with at least one of the one or more structural components comprising substantially HfO 2 —TiO 2 material, a forcer electrode configured to apply an electrical force on the hemisphere to cause the hemisphere to oscillate, and one or more sensor electrodes disposed in proximity to the hemisphere and configured to sense an orientation of a vibration pattern of the hemispherical resonator gyroscope.
1. A method comprising:
depositing one or more layers of HfO 2 material and one or more layers of TiO 2 material; and
using the deposited one or more HfO2 layers and the deposited one or more TiO 2 layers to produce one or more structural components of a device, at least one of the one or more structural components comprising a hemispherical shell of a hemispherical resonator gyroscope comprising substantially the deposited one or more layers of the HfO 2 material and the deposited one or more layers of the TiO 2 material.
2. The method of claim 1 , wherein the produced structural component of the device is adapted to independently provide structural integrity of the structural component.
3. The method of claim 1 , wherein depositing the one or more layers of the HfO 2 material and the one or more layers of the TiO 2 material comprises: alternatingly depositing the one or more layers of the HfO 2 material and the one or more layers of the TiO 2 material such that each of the one or more TiO 2 layers is deposited adjacent to at least one of the one or more HfO 2 layers and is separated from any other of the one or more TiO 2 layers by one of the one or more HfO 2 layers.
4. The method of claim 1 , wherein depositing the one or more layers of the HfO 2 material and the one or more layers of the TiO 2 material comprises: co-depositing the one or more layers of the HfO 2 material and the one or more layers of the TiO 2 material.
5. The method of claim 1 , further comprising: placing a conductive electrode within the structural component so that opposite surfaces of the electrode each contact respective ones of the deposited one or more HfO 2 layers and the deposited one or more TiO 2 layers used to produce the structural component.
6. The method of claim 5 , wherein placing the conductive electrode comprises: placing the electrode at, or close to, center of the structural component's thickness.
7. The method of claim 1 , wherein each of the deposited one or more HfO 2 layers and each of the deposited one or more TiO 2 layers is associated with a corresponding predetermined thickness so that the structural component of the device comprises substantially 63HfO 2 -37TiO 2 material.
8. The method of claim 1 , wherein depositing the one or more layers of the HfO 2 material and the one or more layers of the TiO 2 material comprises: depositing the one or more layers of HfO 2 material and the one or more layers of TiO 2 material through one or more of: atomic layer deposition manufacturing procedure, and chemical vapor deposition manufacturing procedure.
9. A method comprising: depositing one or more layers of a material to produce a hemispherical shell of a hemispherical resonator gyroscope; and placing a conductive electrode layer within the hemispherical shell so that opposite surfaces of the electrode layer each contact respective at least one of the one or more deposited layers of the material wherein depositing the one or more layers of the material comprises: depositing one or more layers of a HfO 2 —TiO 2 -based material.