Laser devices using a semipolar plane

1. A laser device comprising:

a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation;

an n-type cladding region overlying the semipolar surface;

an active region comprising at least one light emitting active layer region overlying the n-type cladding region; the light emitting active layer region comprising a quantum well region or a double hetero-structure region;

a p-type cladding region overlying the active region;

a conductive oxide overlying the p-type cladding region;

a laser stripe region comprising at least a portion of the p-type cladding region and the conductive oxide, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end;

a first facet having a first mirror surface provided on the first end of the laser stripe region;

a reflective coating provided on the first facet; and

a second facet having a second mirror surface provided on the second end of the laser stripe region;

wherein the laser device is configured to emit electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or between 500 nm and 560 nm.

2. The device of claim 1 , wherein the offcut of the orientation is between +/−5 degrees toward a c-plane and between +/−10 degrees toward an a-plane; and

wherein the active region contains a plurality of quantum well regions comprising 1 to 7 quantum wells, each of the quantum wells comprising substantially InGaN; the plurality of quantum well regions ranging in thickness from 2 nm to 5 nm or from 5 nm to 10 nm; or wherein the active region contains a double heterostructure region; the double heterostructure region ranging in thickness from 10 nm to about 25 nm.

3. The device of claim 1 , wherein the first facet and the second facet are etched facets formed using a lithography and etching process.

4. The device of claim 1 , wherein the conductive oxide comprises indium tin oxide (ITO).

5. The device of claim 1 , wherein the conductive oxide comprises zinc oxide (ZnO).

6. The device of claim 1 , wherein the conductive oxide comprises indium tin oxide (ITO) and is formed from an electron cyclotron resonance deposition technique.

7. The device of claim 1 , wherein the conductive oxide is formed from an electron cyclotron resonance deposition technique at a process temperature below 200° C.

8. The device of claim 1 , wherein the conductive oxide is formed from an electron cyclotron resonance deposition technique at a process temperature below 200° C., wherein the substrate contains a photoresist layer during deposition to provide a lift-off technique.

9. The device of claim 1 , wherein the conductive oxide is ZnO and is formed from an electron cyclotron resonance to deposition technique.

10. A green laser device comprising:

a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation;

an n-type cladding region overlying the semipolar surface;

an active region comprising at least one light emitting active layer region overlying the n-type cladding region; the light emitting active layer region comprising a quantum well region or a double hetero-structure region;

a laser stripe region overlying the active region, the laser stripe region comprising conductive oxide and being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end;

a first facet having a first mirror surface provided on the first end of the laser stripe region;

a reflective coating provided on the first facet; and

a second facet having a second mirror surface provided on the second end of the laser stripe region;

wherein the green laser device is configured to emit electromagnetic radiation with a peak wavelength of between 500 nm and 580 nm.

11. The device of claim 10 , wherein the offcut of the orientation is between +/−5 degrees toward a c-plane and between +/−10 degrees toward an a-plane;

wherein the active region contains a plurality of quantum well regions comprising 1 to 7 quantum wells, each of the quantum wells comprising substantially InGaN; the plurality of quantum well regions ranging in thickness from 2 nm to 5 nm or from 5 nm to 10 nm; or wherein the active region contains a double heterostructure region; the double heterostructure region ranging in thickness from about 10 nm to about 25 nm.

12. The device of claim 10 , wherein the first facet and the second facet are etched facets formed using a lithography and etching process.

13. The device of claim 10 , comprising a p-type gallium and nitrogen containing layer overlying the active region and underlying the conductive oxide region.

14. A method for fabricating a laser device, the method comprising:

providing a gallium and nitrogen containing material having a semipolar surface configured on one of either a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation;

forming an n-type cladding region overlying the semipolar surface;

forming an active region comprising at least one light emitting active layer region overlying the n-type cladding region; the light emitting active layer region comprising a quantum well region or a double hetero-structure region; and

depositing a conductive oxide overlying the active region, the conductive oxide being formed at a process temperature of less than 450° C. to maintain a substantially crystalline characteristic of the active region to emit electromagnetic radiation within a desired electroluminescence efficiency, the conductive oxide forming at least a part of a laser stripe region, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end;

forming a first facet having a first mirror surface on the first end of the laser stripe region;

forming a reflective coating on the first facet; and

forming a second facet having a second mirror surface on the second end of the laser stripe region;

wherein the laser device is configured to emit electromagnetic radiation with a peak wavelength of between 500 nm and 580 nm.

15. The method of claim 14 , wherein the conductive oxide is selected from indium tin oxide (ITO) and zinc oxide (ZnO).

16. The method of claim 14 wherein the conductive oxide is indium tin oxide (ITO) and is formed from an electron cyclotron resonance deposition technique.

17. The method of claim 14 , wherein the conductive oxide is formed from an electron cyclotron resonance deposition technique at a process temperature below 200° C.

18. The method of claim 14 , wherein the conductive oxide is formed from an electron cyclotron resonance deposition technique at a process temperature below 200° C., wherein the substrate contains a photoresist layer during deposition to provide a lift-off technique.

19. The method of claim 14 , wherein the conductive oxide is ZnO and is formed from an electron cyclotron resonance deposition technique.

20. The method of claim 14 , wherein the first facet and the second facet are etched facets formed using a lithography and etching process.