SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE THEREOF
According to one embodiment, a semiconductor device manufacturing method provides filling a through-hole which penetrates through a first side of substrate to a second side thereof. A seed film including copper is formed on the inner wall surface of the through-hole. A first metal layer including copper is grown bottom-up from one end of the through-hole toward the other end thereof, to partially fill the through-hole, leaving a space having a depth less than the radius of the through-hole as measured from the second side surface of the substrate. A second metal layer including nickel is conformally grown in the space from the inner peripheral surface of the through-hole to a height having a summit surface protruding from the second side surface of the substrate. A third metal layer is formed on the summit surface of the second metal layer.
1 . A semiconductor device manufacturing method, comprising:
forming a conductive film on a first surface of a substrate;
forming a through-hole extending through the substrate from a second surface thereof to expose the conductive film on the first surface of the substrate;
depositing a seed film on an inner wall of the through-hole, a surface of the conductive film exposed in the through-hole, and the second surface of the substrate;
depositing a first metal layer from a first end of the through-hole adjacent to the conductive film toward a second end thereof by a bottom-up electrolytic plating method to fill a volume of the through-hole to a depth position; and
depositing a second metal layer on an inner peripheral surface of the through-hole from the depth position by a conformal electrolytic plating method to forma summit surface that protrudes from the second surface.
2 . The semiconductor device manufacturing method according to claim 1 , further comprising:
depositing a third metal layer on the summit surface of the second metal layer.
3 . The semiconductor device manufacturing method according to claim 2 , wherein
the third metal layer is formed by thermofusion.
4 . The semiconductor device manufacturing method according to claim 2 , further comprising:
etching the seed film using the third metal layer as a mask.
5 . The semiconductor device manufacturing method according to claim 1 , wherein
the first metal layer includes copper, and
the second metal layer includes nickel.
6 . The semiconductor device manufacturing method according to claim 5 , wherein
the seed film includes copper.
7 . The semiconductor device manufacturing method according to claim 5 , wherein
a distance from the second surface of the substrate to the depth position is less than a radius of the through-hole measured at the second surface of the substrate.
8 . The semiconductor device manufacturing method according to claim 1 , wherein
a distance from the second surface of the substrate to the depth position is less than a radius of the through-hole measured at the second surface of the substrate.
9 . A semiconductor device manufacturing method, comprising:
forming a conductive film on a first surface of a substrate;
forming a through-hole extending through the substrate from a second surface thereof to expose the conductive film on the first surface of the substrate;
depositing a seed film on an inner wall of the through-hole, a surface of the conductive film exposed in the through-hole, and the second surface of the substrate;
depositing a first metal layer from a first end of the through-hole adjacent to the conductive film toward a second end thereof by a bottom-up electrolytic plating method to fill the through-hole to a depth position;
depositing a second metal layer on an inner peripheral surface of the through-hole from the depth position by a conformal electrolytic plating method to forma summit surface that protrudes from the second surface;
depositing a third metal layer on the summit surface of the second metal layer; and
etching the seed film using the third metal layer as a mask.
10 . The semiconductor device manufacturing method according to claim 9 , wherein
a distance from the second surface of the substrate to the depth position is less than a radius of the through-hole measured at the second surface of the substrate.
11 . The semiconductor device manufacturing method according to claim 9 , wherein
the first metal layer includes copper, and
the second metal layer includes nickel.
12 . The semiconductor device manufacturing method according to claim 11 , wherein
the depth position is a depth that is less than a radius of the through-hole measured at the second surface of the substrate.
13 . The semiconductor device manufacturing method according to claim 11 , wherein
the seed film includes copper.
14 . The semiconductor device manufacturing method according to claim 13 , wherein
a distance from the second surface of the substrate to the depth position is less than a radius of the through-hole measured at the second surface of the substrate.
15 . The semiconductor device manufacturing method according to claim 9 , wherein
the third metal layer is formed by thermofusion.
16 . A semiconductor device manufacturing method, comprising:
forming a conductive film on a first major surface of a substrate;
forming a through-hole extending through the substrate from a second major surface of the substrate to expose the conductive film on the first major surface of the substrate;
depositing a seed film including copper on an inner peripheral wall of the through-hole, a surface of the conductive film exposed in the through-hole, and the second major surface of the substrate;
depositing a first metal layer including copper from a first end of the through-hole adjacent to the conductive film toward a second end thereof by a bottom-up electrolytic plating method to fill a volume of the through-hole to a depth position that is between the first and second major surfaces of the substrate;
depositing a second metal layer including nickel on an inner peripheral surface of the through-hole from the depth position by a conformal electrolytic plating method to form a summit surface that protrudes from the second major surface;
depositing a third metal layer on the summit surface of the second metal layer; and
etching the seed film using the third metal layer as a mask.
17 . The semiconductor device manufacturing method according to claim 16 , wherein
the third metal layer is formed by thermofusion.
18 . The semiconductor device manufacturing method according to claim 16 , wherein
a distance from the second major surface of the substrate to the depth position is less than a radius of the through-hole measured at the second major surface of the substrate.
19 . The semiconductor device manufacturing method according to claim 16 , wherein
wherein the seed film deposited on the second major surface has a dimension that is substantially the same as a dimension of the summit surface.
20 . The semiconductor device manufacturing method according to claim 16 , further comprising
forming an insulating film on the second major surface of the substrate and the inner peripheral wall of the through-hole prior to depositing the seed film.