Liquid crystal display device and substrate for display device
According to one embodiment, a display device includes a semiconductor layer, a first insulating film covering the semiconductor layer, a gate line extended in a first direction on the first insulating film to intersect the semiconductor layer, a second insulating film covering the gate line, a first common electrode formed on the second insulating film, a third insulating film covering the first common electrode, a source line which is extended in a second direction on the third insulating film and which is in contact with the semiconductor layer, and a fourth insulating film which covers the source line and which has a thickness greater than a thickness of the third insulating film.
1. A liquid crystal display device, comprising:
a first substrate comprising a semiconductor layer including a first region and a second region, a first insulating film covering the semiconductor layer, a second insulating film covering the first insulating film, a gate line extended in a first direction between the first insulating film and the second insulating film to intersect the semiconductor layer, a third insulating film, a first common electrode formed between the second insulating film and the third insulating film, a source line which is extended in a second direction intersecting the first direction directly on the third insulating film and which is in contact with the first region through a first contact hole penetrating the first to third insulating films, a drain electrode which is formed on the third insulating film and which is in contact with the second region through a second contact hole penetrating the first to third insulating films, a fourth insulating film which covers the source line and the drain electrode and which has a thickness greater than a thickness of the third insulating film, a pixel electrode which includes a main pixel electrode extended in the second direction on the fourth insulating film and which is in contact with the drain electrode through a third contact hole penetrating the fourth insulating film, a second common electrode which includes a second main common electrode extended in the second direction on the fourth insulating film and opposed to the source line, and which has a same potential as the first common electrode, and a first alignment film covering the pixel electrode and the second common electrode;
a second substrate comprising a second alignment film opposed to the first alignment film; and
a liquid crystal layer held between the first substrate and the second substrate, wherein
the first common electrode is opposed to the source line, extended in the first direction over the source line, opposed to the gate line and the pixel electrode, and extended in the second direction over the gate line,
the first common electrode comprises a first opening portion and a second opening portion,
the first opening portion overlaps the first contact hole, and
the second opening portion overlaps the second contact hole.
2. The liquid crystal display device of claim 1 ,
wherein the thickness of the fourth insulating film is 1.5 to 10 times as great as the thickness of the third insulating film.
3. The liquid crystal display device of claim 1 ,
wherein each of the first to third insulating films is formed of an inorganic material, and the fourth insulating film is formed of an organic material.
4. The liquid crystal display device of claim 1 ,
wherein the second substrate comprises a third common electrode which includes a third main common electrode extended in the second direction and opposed to the second main common electrode, which is covered with the second alignment film, and which has a same potential as the second common electrode.
5. The liquid crystal display device of claim 1 , wherein the first common electrode is formed of a transparent conductive material.
6. The liquid crystal display device of claim 1 , wherein the second common electrode is formed in a strip shape.
7. A liquid crystal display device, comprising:
a first substrate comprising a semiconductor layer including a first region and a second region, a first insulating film covering the semiconductor layer, a second insulating film covering the first insulating film, a gate line extended in a first direction between the first insulating film and the second insulating film to intersect the semiconductor layer, a third insulating film covering the second insulating film, a first common electrode formed between the second insulating film and the third insulating film, a source line which is extended in a second direction intersecting the first direction directly on the third insulating film and which is in contact with the first region through a first contact hole penetrating the first to third insulating films, a drain electrode which is formed on the third insulating film and which is in contact with the second region through a second contact hole penetrating the first to third insulating films, a fourth insulating film which covers the source line and the drain electrode, a pixel electrode which includes a main pixel electrode extended in the second direction on the fourth insulating film and which is in contact with the drain electrode through a third contact hole penetrating the fourth insulating film, a second common electrode which includes a second main common electrode extended in the second direction on the fourth insulating film and opposed to the source line, and which has a same potential as the first common electrode, and a first alignment film covering the pixel electrode and the second common electrode;
a second substrate comprising a second alignment film opposed to the first alignment film; and
a liquid crystal layer held between the first substrate and the second substrate,
a relationship t 4 >(∈ 4 /∈ 3 )*t 3 being met where a thickness of the third insulating film is represented by t 3 , a relative dielectric constant of the third insulating film is represented by ∈ 3 , a thickness of the fourth insulating film is represented by t 4 , and a relative dielectric constant of the fourth insulating film is represented by ∈ 4 wherein
the first common electrode is opposed to the source line, extended in the first direction over the source line, opposed to the gate line and the pixel electrode, and extended in the second direction over the gate line,
the first common electrode comprises a first opening portion and a second opening portion,
the first opening portion overlaps the first contact hole, and
the second opening portion overlaps the second contact hole.
8. The liquid crystal display device of claim 7 ,
wherein the thickness of the fourth insulating film is 1.5 to 10 times as great as the thickness of the third insulating film.
9. The liquid crystal display device of claim 7 ,
wherein each of the first to third insulating films is formed of an inorganic material, and the fourth insulating film is formed of an organic material.
10. The liquid crystal display device of claim 7 ,
wherein the second substrate comprises a third common electrode which includes a third main common electrode extended in the second direction and opposed to the second main common electrode, which is covered with the second alignment film, and which has a same potential as the second common electrode.
11. A substrate for a display device, the substrate comprising:
a semiconductor layer;
a first insulating film covering the semiconductor layer;
a gate line extended in a first direction on the first insulating film to intersect the semiconductor layer;
a first storage capacitance line and a second storage capacitance line on the first insulating film;
a second insulating film covering the gate line, the first storage capacitance line and the second storage capacitance line;
a first common electrode formed on the second insulating film;
a third insulating film covering the first common electrode;
a source line which is extended in a second direction intersecting the first direction on the third insulating film and which is in contact with the semiconductor layer through a first contact hole penetrating the first to third insulating films; and
a fourth insulating film which covers the source line and which has a thickness greater than a thickness of the third insulating film, wherein
the gate line is located between the first storage capacitance line and the second storage capacitance line and is closer to the first storage capacitance line than to the second storage capacitance line, and
the first common electrode is opposed to the source line, extended in the first direction over the source line, opposed to the gate line, the first storage capacitance line and the second storage capacitance line, and extended in the second direction over the first storage capacitance line and the second storage capacitance line.
12. The substrate of claim 11 , wherein
the semiconductor layer includes a first extended portion which is opposed to the source line and extended in the second direction, a second extended portion which is continuous with the first extended portion, opposed to the first storage capacitance line, and extended in the first direction, and a third extended portion which is continuous with the second extended portion and extended in the second direction.
13. The substrate of claim 12 , further comprising a branch portion which is continuous with the gate line,
wherein the first extended portion intersects the gate line and the branch portion.
14. The substrate of claim 12 , further comprising a drain electrode between the third insulating film and the fourth insulating film,
wherein
the first common electrode comprises an opening portion, and
the drain electrode is in contact with the third extended portion through the opening portion and a second contact hole penetrating the first to third insulating films, between the gate line and the first storage capacitance line.
15. The substrate of claim 14 , further comprising a pixel electrode on the fourth insulating film,
wherein
the drain electrode is extended in the second direction from a position overlapping the second contact hole to a position opposed to the gate line, and
the pixel electrode is in contact with the drain electrode through a third contact hole penetrating the fourth insulating film, at a position at which the drain electrode is opposed to the gate line.
16. The substrate of claim 15 , wherein
the pixel electrode comprises a main pixel electrode extended in the second direction and a sub pixel electrode extended in the first direction, and
the sub-pixel electrode is in contact with the drain electrode through the third contact hole.
17. The substrate of claim 16 , further comprising a second main common electrode which is extended in the second direction on the fourth insulating film, opposed to the source line, and has a same potential as the first common electrode,
wherein the second main common electrode has a first width at a position at which the second main common electrode is aligned with the main pixel electrode and a second width at a position at which the second main common electrode is aligned with the sub-pixel electrode, and the second width is smaller than the first width.
18. The substrate of claim 11 , wherein
the second storage capacitance line includes a first portion extended in the first direction, and a second portion which is continuous with the first portion, opposed to the source line, and extended in the second direction toward the gate line.