Active device divider circuit with adjustable IQ

1. A programmable quiescent current reference circuit comprising:

a first node;

a second node;

a third node;

multiple transistor load devices coupled in series between the first node and the second node;

multiple first switches, each associated with a different transistor load device to selectably bypass its associated transistor load device; and

second switch circuitry configured to selectably couple a first terminal of a selected transistor load device, from among the multiple transistor load devices, to the third node, while de-coupling the other transistor load devices, from among the multiple transistor load devices, from the third node.

2. The circuit of claim 1 , wherein the multiple first switches are coupled in series.

3. The circuit of claim 1 , wherein the second switch circuitry includes multiple second switches, each associated with a different transistor load device and configured to selectably couple a first terminal of its associated transistor load device to the third node.

4. The circuit of claim 1 , wherein the multiple respective associated first switches include circuit paths between first and second terminals of associated transistor load devices.

5. The circuit of claim 1 , wherein each transistor load device includes an NMOS FET that includes a body and a P-well; and

wherein a second terminal of the NMOS FET is coupled to the body.

6. The circuit of claim 1 , wherein the multiple first switches are configured to couple a number of respective bypass circuits between first and second terminals of associated transistor load devices to configure the series-connected transistor load devices to produce a target value for a quiescent current (IQ), when the first node is coupled to a first voltage value (V 1 ) and the second node is coupled to a voltage value (V 2 ).

7. The circuit of claim 6 , wherein the target value for IQ is based upon a nominal threshold voltage for transistor load devices; and

wherein the transistor load devices have threshold voltages that are larger than a nominal threshold voltage.

8. The circuit of claim 6 , wherein the target value for IQ is based upon a nominal threshold voltage for transistor load devices; and

wherein the transistor load devices have threshold voltages that are smaller than a nominal threshold voltage.

9. The circuit of claim 1 , wherein the second switch circuitry includes multiple second switches configured to couple the first terminal of a transistor load device, selected from among one or more of the k transistor load devices, to couple a target divider voltage value (V 3 ) to the third node, when the first node is coupled to a first voltage value (V 1 ) and the second node is coupled to a voltage value (V 2 ).

10. The circuit of claim 1 , wherein the multiple first switches are configured to couple a number of respective bypass circuits between first and second terminals of associated transistor load devices to configure the series-connected transistor load devices to produce a target value for a quiescent current ( 10 ), when the first node is coupled to a first voltage value (V 1 ) and the second node is coupled to a voltage value (V 2 ); and

wherein the second switch circuitry includes multiple second switches configured to couple the first terminal of a transistor load device, selected from among one or more of the k transistor load devices, to couple a target divider voltage value (V 3 ) to the third node, when the first node is coupled to a first voltage value (V 1 ) and the second node is coupled to a voltage value (V 2 ).

11. The circuit of claim 1 , wherein the first node is coupled to a voltage V 1 ;

wherein the second node is coupled to a voltage V 2 ; and

wherein the multiple first switches are configured to couple a number of respective bypass circuits between first and second terminals of associated transistor load devices to configure the series-connected transistor load devices to produce a target value for a quiescent current (IQ).

12. The circuit of claim 11 , wherein the target value for IQ is based upon a nominal threshold voltage for transistor load devices; and

wherein the transistor load devices have threshold voltages that are larger than a nominal threshold voltage.

13. The circuit of claim 11 , wherein the target value for IQ is based upon a nominal threshold voltage for transistor load devices; and

wherein the transistor load devices have threshold voltages that are smaller than a nominal threshold voltage.

14. The circuit of claim 1 , wherein the first node is coupled to a voltage V 1 ;

wherein the second node is coupled to a voltage V 2 ; and

wherein the second switch circuitry includes multiple second switches configured to couple the first terminal of a transistor load device, selected from among one or more of the k transistor load devices, to couple a target divider voltage value (V 3 ) to the third node.

15. The circuit of claim 1 , wherein the first node is coupled to a voltage V 1 ;

wherein the second node is coupled to a voltage V 2 ;

wherein the multiple first switches are configured to couple a number of respective bypass circuits between first and second terminals of associated transistor load devices to configure the series-connected transistor load devices to produce a target value for a quiescent current (IQ); and

wherein the second switch circuitry includes multiple second switches configured to couple the first terminal of a transistor load device, selected from among one or more of the k transistor load devices, to couple a target divider voltage value (V 3 ) to the third node.

16. A circuit comprising:

a first voltage node;

a second voltage node;

a third output node;

k FET devices each having a drain, a source, and a gate, and each having its drain coupled to its gate;

wherein k is an integer greater than one;

wherein the k FET devices are coupled in series between the first node and the second node to form a series connected chain of FET devices, wherein a kth FET device of the chain has its drain electrically coupled to the first node, a first device of the chain has its source electrically coupled to the second node, and each of a second FET device to a k−1 FET device of the chain has its drain coupled to a source of an adjacent FET device of the chain closer to the first node and has its source electrically coupled to a drain of an adjacent FET device of the chain closer to the second node;

multiple first switches coupled in series, and each associated with a different FET device, and configured to selectably couple a bypass current path in parallel with its associated FET device;

a multiplex circuit that includes multiple input terminals each coupled to a drain of a different FET load device and including an output terminal coupled to the third node.

17. A circuit comprising:

a first node;

a second node;

a third node;

k FET load devices coupled in series between the first node and the second node;

wherein k is an integer greater than one;

means for selectably coupling respective bypass circuits between source and drain of respective FET load devices; and

means for selecting from among multiple FET load devices and for coupling a drain of a selected one FET load device to the third node, and for de-coupling the other FET load devices, from among the multiple FET load devices, from the third node.

18. A method to configure an active divider circuit that includes a series-connected chain of active load devices to produce a target value for a quiescent current (IQ) with the first node being coupled to a first voltage value (V 1 ) and the second node being coupled to a voltage value (V 2 ), the method comprising:

bypassing selected associated load devices so as to configure the series-connected chain of load devices to produce the target value for the quiescent current (IQ), when the first node is coupled to the first voltage value (V 1 ) and the second node is coupled to the voltage value (V 2 ); and

coupling a selected load device to couple a target divider voltage value (V 3 ) to the third node.

19. The method of claim 18 , wherein the target value for IQ is based upon a nominal threshold voltage for load devices; and

wherein the load devices have threshold voltages that are larger than a nominal threshold voltage.

20. The circuit of claim 18 , wherein the target value for IQ is based upon a nominal threshold voltage for load devices; and

wherein the load devices have threshold voltages that are smaller than a nominal threshold voltage.