Gas supply delivery arrangement including a gas splitter for tunable gas flow control
View Patent ↗A gas supply delivery arrangement of a plasma processing system for processing a substrate with gases introduced through at least first, second, and third gas injection zones comprises process gas supply inlets and tuning gas inlets. A mixing manifold comprises gas sticks in fluid communication with a process gas supply and tuning gas sticks in fluid communication with a tuning gas supply. A first gas outlet delivers gas to the first gas injection zone, a second gas outlet delivers gas to the second gas injection zone, and a third gas outlet delivers gas to the third gas injection zone. A gas splitter is in fluid communication with the mixing manifold, and includes a first valve arrangement which splits mixed gas exiting the mixing manifold into a first mixed gas supplied to the first gas outlet and a second mixed gas supplied to the second, and/or third gas outlets.
1. A gas supply delivery arrangement for supplying process gas to a chamber of a plasma processing system wherein a semiconductor substrate is processed with gases introduced through at least first, second, and third gas injection zones, comprising:
a plurality of process gas supply inlets and a plurality of tuning gas inlets; a mixing manifold comprising a plurality of gas supply sticks each of which is adapted to provide fluid communication with a respective process gas supply;
a plurality of tuning gas sticks each of which is adapted to provide fluid communication with a respective tuning gas supply;
a first gas outlet adapted to deliver gas to the first gas injection zone, a second gas outlet adapted to deliver gas to the second gas injection zone, and a third gas outlet adapted to deliver gas to the third gas injection zone;
a gas splitter in fluid communication with the mixing manifold, the gas splitter including a first valve arrangement which splits mixed gas exiting the mixing manifold into:
a first mixed gas which can be supplied to the first gas outlet; and
a second mixed gas which can at different times be supplied to:
only the second gas outlet;
only the third gas outlet; and
the second and third gas outlets; and
a second valve arrangement which, at different times, selectively delivers tuning gas from the tuning gas sticks to:
only the first gas outlet;
only the second gas outlet;
only the third gas outlet;
only the first and second gas outlets;
only the first and third gas outlets;
only the second and third gas outlets; and
the first, second, and third gas outlets.
2. The gas supply delivery arrangement of claim 1 , wherein the second valve arrangement includes a first set of valves which selectively delivers a first tuning gas to a first tuning gas conduit in fluid communication with the first gas outlet, the second gas outlet, the third gas outlet, or combination thereof, a second set of valves which selectively delivers a second tuning gas to a second tuning gas conduit in fluid communication with the first gas outlet, the second gas outlet, the third gas outlet, or combination thereof, a third set of valves which selectively delivers a third tuning gas to a third tuning gas conduit in fluid communication with the first gas outlet, the second gas outlet, the third gas outlet, or combination thereof, and a fourth set of valves which selectively delivers a fourth tuning gas to a fourth tuning gas conduit in fluid communication with the first gas outlet, the second gas outlet, the third gas outlet, or combination thereof.
3. The gas supply delivery arrangement of claim 2 , wherein the second set of valves includes valves which selectively connect first, second, third and fourth tuning gas sticks of the plurality of tuning gas sticks to the mixing manifold and/or a purge line.
4. The gas supply delivery arrangement of claim 2 , wherein the first valve arrangement includes a first valve set with critical orifices to precisely control a ratio of the first mixed gas and deliver the first mixed gas to the first gas outlet, a second valve set with critical orifices to control a ratio of the second mixed gas and deliver the second mixed gas to the second and/or third gas outlet, and a third valve set which delivers the mixed gas to the second and/or third gas outlets.
5. The gas supply delivery arrangement of claim 1 , wherein the first valve arrangement delivers the first mixed gas only to the first gas outlet and the second mixed gas only to the second and/or third gas outlets.
6. A plasma processing system including the gas supply delivery arrangement of claim 1 , wherein the plasma processing system includes a chamber, a substrate support on which a semiconductor substrate is processed in the chamber, a gas injection system connected to the first, second, and third gas outlets of the gas supply delivery arrangement, a vacuum source operable to maintain the chamber at a desired vacuum pressure, and a power supply operable to energize gas in the chamber into a plasma, the gas injection system delivering gas from the gas supply delivery arrangement to at least first, second and third zones above the semiconductor substrate.
7. The plasma processing system of claim 6 , wherein the first zone is a center zone of the semiconductor substrate, the second zone is a middle zone surrounding the center zone, and the third zone is an edge zone surrounding the middle zone.
8. The plasma processing system of claim 6 , wherein the chamber is an inductively coupled plasma processing chamber in which the gas injection system is a gas distribution plate.
9. The plasma processing system of claim 6 , wherein the chamber is a capacitively coupled plasma processing chamber in which the gas injection system is a showerhead electrode.