HIGH EFFICIENCY MULTIJUNCTION PHOTOVOLTAIC CELLS
Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.
1 . A Ga 1-x In x N y As 1-y-z Sb z subcell, wherein the internal quantum efficiency as a function of irradiance energy is characterized by,
an internal quantum efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.30 eV, and an internal quantum efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.30 eV;
an internal quantum efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.18 eV, and an internal quantum efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.30 eV;
an internal quantum efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.10 eV, and an internal quantum efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.18 eV;
an internal quantum efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.03 eV, and an internal quantum efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.15 eV;
an internal quantum efficiency of at least 70% at an irradiance energy from 1.38 eV to 0.99 eV, and an internal quantum efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.15 eV; or
an internal quantum efficiency of at least 60% at an irradiance energy from 1.38 eV to 0.92 eV, an internal quantum efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.03 eV, and an internal quantum efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.15 eV;
wherein the internal quantum efficiency is measured at a junction temperature of 25° C.,
wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
a band gap within a range from 0.8 eV to 1.3 eV; and
values for x, y, and z of 0.03≦x≦0.19, 0.008≦y≦0.055, and 0.001≦z≦0.05, and
wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is lattice matched to a (Si,Sn)Ge substrate.
2 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by a Eg/q-Voc equal to or greater than 0.55 V measured using a 1 sun AM1.5D spectrum at a junction temperature of 25° C.
3 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by a Eg/q-Voc from 0.4 V to 0.7 V measured using a 1 sun AM1.5D spectrum at a junction temperature of 25° C.
4 - 7 . (canceled)
8 . A multijunction photovoltaic cell, comprising from three to five subcells, wherein,
at least one of the subcells comprises the Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 ; and
each of the subcells is lattice matched to each of the other subcells.
9 - 13 . (canceled)
14 . A multijunction photovoltaic cell, comprising:
a first subcell comprising (Al)InGaP;
a second subcell comprising (Al,In)GaAs underlying the first subcell;
a third subcell comprising Ga 1-x In x N y As 1-y-z Sb z underlying the second subcell; and
a fourth subcell comprising (Si,Sn)Ge underlying the third subcell; wherein,
each of the subcells is lattice matched to each of the other subcells;
the third subcell is characterized by a bandgap from 0.83 eV to 1.22 eV; and
the third subcell is characterized by an internal quantum efficiency greater than 70% at an irradiance energy throughout the range from 0.95 eV to 1.55 eV at a junction temperature of 25° C.
15 . The multijunction photovoltaic cell of claim 14 , wherein the third subcell is characterized by an internal quantum efficiency greater than 80% at an irradiance energy throughout the range from 1.1 eV to 1.5 eV.
16 . The multijunction photovoltaic cell of claim 14 , wherein the multijunction photovoltaic cell is characterized by,
an open circuit voltage Voc equal to or greater than 2.5 V;
a short circuit current density Jsc equal to or greater than 8 mA/cm 2 ;
a fill factor equal to or greater than 75%; and
an efficiency greater than 25%,
measured using a 1 sun AM1.5D or AM0 spectrum at a junction temperature of 25° C.
17 . The multijunction photovoltaic cell of claim 14 , wherein the multijunction photovoltaic cell is characterized by,
an open circuit voltage Voc from 2.5 V to 3.5 V;
a short circuit current density Jsc from 13 mA/cm 2 to 17 mA/cm 2 ;
a fill factor from 80% to 90%; and
an efficiency from 28% to 36%,
measured using a 1 sun AM0 spectrum at a junction temperature of 25° C.
18 . The multijunction photovoltaic cell of claim 14 , wherein,
first subcell is characterized by a bandgap from 1.9 eV to 2.2 eV;
the second subcell is characterized by a bandgap from 1.40 eV to 1.57 eV;
the third subcell is characterized by a bandgap from 0.98 eV to 1.2 eV; and
the fourth subcell is characterized by a bandgap of 0.67 eV.
19 . The multijunction photovoltaic cell of claim 14 , wherein values for x, y, and z are 0.075≦x≦0.083, 0.015≦y≦0.020, and 0.003≦z≦0.09.
20 . The multijunction photovoltaic cell of claim 14 , wherein the third subcell is characterized by,
an open circuit voltage Voc from 0.42 V to 0.57 V;
a short circuit current density Jsc from 10 mA/cm 2 to 13 mA/cm 2 ; and
a bandgap from 1.0 eV to 1.17 eV,
measured using a 1 sun AM1.5D spectrum at a junction temperature of 25° C.
21 . A multijunction photovoltaic cell, comprising:
a first subcell comprising (Al)InGaP;
a second subcell comprising (Al,In)GaAs underlying the first subcell;
a third subcell comprising Ga 1-x In x N y As 1-y-z Sb z underlying the second subcell; and
a fourth subcell comprising Ga 1-x In x N y As 1-y-z Sb z underlying the third subcell; wherein,
each of the subcells is lattice matched to each of the other subcells;
the third subcell is characterized by a bandgap from 0.97 eV to 1.3 eV;
the fourth subcell is characterized by a bandgap from 0.8 eV to 1 eV; and
each of the fourth subcell and the third subcell is characterized by an internal quantum efficiency greater than 70% at an irradiance energy throughout the range from 0.95 eV to 1.55 eV.
22 . The multijunction photovoltaic cell of claim 21 , wherein each of the fourth subcell and the third subcell is characterized by an internal quantum efficiency greater than 80% at an illumination energy throughout the range from 1.1 eV to 1.5 eV.
23 . The multijunction photovoltaic cell of claim 21 , wherein the multijunction photovoltaic cell is characterized by,
an open circuit voltage Voc equal to or greater than 2.8 V;
a short circuit current density Jsc equal to or greater than 18 mA/cm 2 ;
a fill factor equal to or greater than 80%; and
an efficiency equal to or greater than 29%,
measured using a 1 sun 1.5 AM0 spectrum at a junction temperature of 25° C.
24 . The multijunction photovoltaic cell of claim 21 , wherein,
the first subcell is characterized by a bandgap from 1.90 eV to 2.20 eV; and
the second subcell is characterized by a bandgap from 1.4 eV to 1.7 eV.
25 . The multijunction photovoltaic cell of claim 21 , comprising:
the fourth subcell comprising Ga 1-x In x N y As 1-y-z Sb z is characterized by a bandgap from 0.9 eV to 1 eV;
the third subcell comprising Ga 1-x In x N y As 1-y-z Sb z is characterized by a bandgap from 1.1 eV to 1.3 eV;
the second subcell comprising (Al,In)GaAs is characterized by a bandgap from 1.5 eV to 1.7 eV; and
the first subcell comprising AlInGaP is characterized by a bandgap from 1.9 eV to 2.1 eV;
wherein the multijunction photovoltaic cell is characterized by,
an open circuit voltage Voc equal to or greater than 3.5 V;
a short circuit current density Jsc equal to or greater than 8 mA/cm 2 ;
a fill factor equal to or greater than 75%; and
an efficiency equal to or greater than 27%,
measured using a 1 sun AM1.5D spectrum at a junction temperature of 25° C.
26 . The multijunction photovoltaic cell of claim 21 , wherein the multijunction photovoltaic cell is characterized by,
an open circuit voltage Voc equal to or greater than 2.5 V;
a short circuit current density Jsc equal to or greater than 8 mA/cm 2 ;
a fill factor equal to or greater than 75%; and
an efficiency equal to or greater than 25%,
measured using a 1 sun AM1.5D or AM0 spectrum at a junction temperature of 25° C.
27 . The multijunction photovoltaic cell of claim 21 , wherein the multijunction photovoltaic cell is characterized by,
an open circuit voltage Voc from 2.5 V to 3.5 V;
a short circuit current density Jsc from 13 mA/cm 2 to 17 mA/cm 2 ; and
a fill factor from 80% to 90%; and
an efficiency from 28% to 36%,
measured using a 1 sun AM0 spectrum at a junction temperature of 25° C.
28 . The multijunction photovoltaic cell of claim 21 , wherein the multijunction photovoltaic cell is characterized by,
an open circuit voltage Voc from 3 V to 3.5 V;
a short circuit current density Jsc from 8 mA/cm 2 to 14 mA/cm 2 ;
a fill factor from 80% to 90%; and
an efficiency from 28% to 36%,
measured using a 1 sun AM1.5D spectrum at a junction temperature of 25° C.
29 . A photovoltaic module comprising at least one multijunction photovoltaic cell of claim 14 .
30 . A photovoltaic system comprising at least one multijunction photovoltaic cell of claim 14 .
31 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.16≦x≦0.19, 0.040≦y≦0.051, and 0.010≦z≦0.018; and
a band gap from 0.89 eV to 0.92 eV.
32 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.10≦x≦0.16, 0.028≦y≦0.037, and 0.005≦z≦0.016; and
a band gap from 0.95 eV to 0.98 eV.
33 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.075≦x≦0.081, 0.040≦y≦0.051, and 0.010≦z≦0.018; and
a band gap from 1.111 eV to 1.117 eV.
34 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.016≦x≦0.024, 0.077≦y≦0.085, and 0.011≦z≦0.015; and
a band gap from 1.10 eV to 1.14 eV.
35 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.068≦x≦0.078, 0.010≦y≦0.017, and 0.004≦z≦0.008; and
a band gap from 1.15 eV to 1.16 eV.
36 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.011≦x≦0.015, 0.04≦y≦0.06, and 0.016≦z≦0.020; and
a band gap from 1.14 eV to 1.18 eV.
37 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.012≦x≦0.016, 0.033≦y≦0.037, and 0.016≦z≦0.020; and
a band gap from 1.18 eV to 1.22 eV.
38 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.026≦x≦0.030, 0.024≦y≦0.018, and 0.005≦z≦0.009; and
a band gap from 1.18 eV to 1.22 eV.
39 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.075≦x≦0.082, 0.016≦y≦0.019, and 0.004≦z≦0.010; and
a band gap from 1.12 eV to 1.16 eV.
40 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.011≦x≦0.016, 0.02≦y≦0.065, and 0.016≦z≦0.020; and
a band gap from 1.14 eV to 1.22 eV.
41 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.016≦x≦0.024, 0.077≦y≦0.085, and 0.010≦z≦0.016, and
a band gap from 1.118 eV to 1.122 eV.
42 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.06≦x≦0.09, 0.01≦y≦0.025, and 0.004≦z≦0.014; and
a bandgap from 1.12 eV to 1.16 eV.
43 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.004≦x≦0.08, 0.008≦y≦0.02, and 0.004≦z≦0.014; and
a bandgap from 1.14 eV to 1.22 eV.
44 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by,
values of 0.06≦x≦0.09, 0.01≦y≦0.03, and 0.004≦z≦0.014; and
a bandgap from 1.118 eV to 1.122 eV.
45 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by a compressive strain less than 0.6%.
46 . The Ga 1-x In x N y As 1-y-z Sb z subcell of claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z subcell is characterized by a compressive strain from 0.1% to 0.6%