Method of producing an optoelectronic component

1. A method of producing an optoelectronic component comprising:

providing a substrate with an optoelectronic semiconductor chip arranged on a surface of the substrate;

providing a mask having a lower layer and an upper layer, wherein the lower layer has a lower opening and the upper layer has an upper opening, which openings jointly form a continuous mask opening, and the lower opening has a larger area than the upper opening;

subsequently arranging the provided mask above the surface of the substrate such that the lower layer faces the surface of the substrate and the mask opening is arranged above the optoelectronic semiconductor chip;

spraying a layer onto the optoelectronic semiconductor chip through the mask opening; and

removing the mask.

2. The method as claimed in claim 1 , wherein the upper opening is a maximum of 10% larger than a top side of the optoelectronic semiconductor chip facing away from the substrate.

3. The method as claimed in claim 1 , wherein the upper opening is centered above the optoelectronic semiconductor chip in a direction perpendicular to the surface of the substrate.

4. The method as claimed in claim 1 , wherein the lower opening and/or the upper opening are/is rectangular.

5. The method as claimed in claim 1 , wherein the lower opening and the upper opening are coaxially arranged.

6. The method as claimed in claim 1 , wherein providing the substrate with the optoelectronic semiconductor chip arranged on the surface comprises arranging a bond wire between the optoelectronic semiconductor chip and a contact pad arranged on the surface of the substrate.

7. The method as claimed in claim 6 , wherein the bond wire is at least partly covered by the upper layer of the mask in a direction perpendicular to the surface of the substrate.

8. The method as claimed in claim 1 , wherein the lower layer is brought into contact with the surface of the substrate in the process of arranging the mask above the surface of the substrate.

9. The method as claimed in claim 1 , wherein the lower layer and the upper layer are continuously integral.

10. The method as claimed in claim 1 , wherein the mask comprises nickel.

11. The method as claimed in claim 1 , wherein the sprayed-on layer comprises a wavelength-converting phosphor.

12. The method as claimed in claim 1 , wherein:

the substrate is provided with a plurality of optoelectronic semiconductor chips arranged on the surface,

the mask has a plurality of mask openings, and

a mask opening is arranged above each optoelectronic semiconductor chip.

13. The method as claimed in claim 12 , wherein the optoelectronic semiconductor chips are provided in a regular grid arrangement on the surface of the substrate.

14. The method as claimed in claim 12 , further comprising dividing the substrate to obtain a plurality of optoelectronic components.

15. A method of producing an optoelectronic component comprising:

providing a substrate with an optoelectronic semiconductor chip arranged on a surface of the substrate;

providing a mask having a lower layer and an upper layer, wherein the lower layer has a lower opening and the upper layer has an upper opening, which openings jointly form a continuous mask opening, and the lower opening has a larger area than the upper opening;

subsequently arranging the provided mask above the surface of the substrate such that the lower layer faces the surface of the substrate and the mask opening is arranged above the optoelectronic semiconductor chip, wherein the lower layer is brought into contact with the surface of the substrate;

spraying a layer onto the optoelectronic semiconductor chip through the mask opening; and

removing the mask.