Optoelectronic component and method for the production thereof

1. An optoelectronic device having a semiconductor layer structure comprising:

a substrate;

a first light-active layer and a second light-active layer,

wherein a first tunnel junction is formed between the first light-active layer and the second light-active layer,

wherein a first Bragg reflector is formed between the first light-active layer and the first tunnel junction, and

wherein a second Bragg reflector is formed between the second light-active layer and the first tunnel junction;

wherein at least a portion of an electromagnetic radiation emitted by the first light-active layer leaves the optoelectronic device via the substrate,

wherein the optoelectronic device is a light emitting diode, and

wherein at least a portion of the electromagnetic radiation emitted in the semiconductor layer structure leaves the optoelectronic device through a surface of the semiconductor layer structure that faces away from the substrate.

2. The optoelectronic device according to claim 1 ,

wherein the first Bragg reflector is configured to reflect electromagnetic radiation from the first light-active layer which impinges on the first Bragg reflector.

3. The optoelectronic device according to claim 2 ,

wherein the first light-active layer is configured to emit electromagnetic radiation with a wavelength from a first wavelength interval, wherein the first Bragg reflector is configured to reflect electromagnetic radiation with a wavelength from the first wavelength interval.

4. The optoelectronic device according to claim 3 ,

wherein the first Bragg reflector comprises a plurality of alternating first layers, which comprise a first material, and second layers, which comprise a second material.

5. The optoelectronic device according to claim 4 ,

wherein each pair of a first layer and an adjacent second layer together comprises an optical thickness which is at least as great as half a wavelength of electromagnetic radiation emitted by the first light-active layer.

6. The optoelectronic device according to claim 4 ,

wherein the first material and the second material have different refractive indices.

7. The optoelectronic device according to claim 4 ,

wherein the first material and the second material are group-III phosphides.

8. The optoelectronic device according to claim 4 ,

wherein the first material and the second material are group-III nitrides.

9. The optoelectronic device according to claim 1 ,

wherein the first Bragg reflector is n-doped and the second Bragg reflector is p-doped, or the first Bragg reflector is p-doped and the second Bragg reflector is n-doped.

10. The optoelectronic device according to claim 1 ,

wherein the second Bragg reflector is configured to reflect electromagnetic radiation from the second light-active layer which impinges on the second Bragg reflector.

11. The optoelectronic device according to claim 1 ,

wherein the first tunnel junction comprises a p-doped region with a degree of doping of at least 10^20 per cubic centimeter and an n-doped region with a degree of doping of at least 10^20 per cubic centimeter.

12. The optoelectronic device according to claim 11 ,

wherein a spacer layer is arranged between the p-doped region of the first tunnel junction and the n-doped region of the first tunnel junction,

wherein the spacer layer has a lower degree of doping than the p-doped region of the first tunnel junction and is preferably undoped.

13. The optoelectronic device according to claim 1 ,

wherein the first light-active layer takes the form of a quantum film structure.

14. The optoelectronic device according to claim 1 ,

wherein the semiconductor layer structure comprises a third light-active layer,

wherein a second tunnel junction is arranged between the second light-active layer and the third light-active layer,

wherein a third Bragg reflector is formed between the second light-active layer and the second tunnel junction,

wherein a fourth Bragg reflector is formed between the third light-active layer and the second tunnel junction.

15. The optoelectronic device according to claim 1 ,

wherein the first Bragg reflector is nontransparent for electromagnetic radiation emitted in the first light-active layer.

16. The optoelectronic device according to claim 1 ,

wherein the second Bragg reflector is nontransparent for electromagnetic radiation emitted in the second light-active layer.

17. The optoelectronic device according to claim 16 ,

wherein in the first tunnel junction an absorption of the electromagnetic radiation, which is emitted in the first and second light-active layers, is prevented by the reflection of the electromagnetic radiation at the first Bragg reflector and the second Bragg reflector.