Method for growing beta-Ga2O3-based single crystal, and beta-Ga2O3-based single crystal substrate and method for producing same
View Patent ↗Provided is one embodiment which is a method for growing a β-Ga 2 O 3 -based single crystal including contacting a flat plate-shaped seed crystal with a Ga 2 O 3 -based melt, and pulling up the seed crystal such that a flat plate-shaped β-Ga 2 O 3 -based single crystal having a principal surface which intersects a surface is grown without inheriting a crystal information of a vaporized material of the Ga 2 O 3 -based melt adhered to the principal surface of the seed crystal, wherein when growing the β-Ga 2 O 3 -based single crystal, a shoulder of the β-Ga 2 O 3 -based single crystal is widened in a thickness direction (t) thereof.
1. A method for growing a β-Ga 2 O 3 -based single crystal, comprising:
contacting a flat plate-shaped seed crystal with a Ga 2 O 3 -based melt; and
pulling up the seed crystal such that a flat plate-shaped β-Ga 2 O 3 -based single crystal comprising a principal surface that intersects a (100) plane is grown without inheriting a crystal information of a vaporized material of the Ga 2 O 3 -based melt adhered to the principal surface of the seed crystal, wherein, when growing the β-Ga 2 O 3 -based single crystal, a shoulder of the β-Ga 2 O 3 -based single crystal is widened in a thickness direction thereof and not widened in a width direction thereof.
2. The method for growing a β-Ga 2 O 3 -based single crystal according to claim 1 , wherein the β-Ga 2 O 3 -based single crystal is grown in a b-axis direction.
3. The method for growing a β-Ga 2 O 3 -based single crystal according to claim 2 , wherein the β-Ga 2 O 3 -based single crystal comprises a flat plate-shaped single crystal having a (101) plane, a (−201) plane or a (001) plane as the principal surface.
4. The method for growing a β-Ga 2 O 3 -based single crystal according to claim 1 , wherein necking in the thickness direction allows the growth of the β-Ga 2 O 3 -based single crystal without inheriting the crystal information of the vaporized material.
5. The method for growing a β-Ga 2 O 3 -based single crystal according to claim 1 , wherein contacting the seed crystal with the Ga 2 O 3 -based melt after removing the vaporized material on the principal surface of the seed crystal in a vicinity of a bottom allows the growth of the β-Ga 2 O 3 -based single crystal without inheriting the crystal information of the vaporized material.
6. The method for growing a β-Ga 2 O 3 -based single crystal according to claim 1 , wherein contacting the seed crystal with the Ga 2 O 3 -based melt without contacting the vaporized material on the principal surface of the seed crystal with the Ga 2 O 3 -based melt allows the growth of the β-Ga 2 O 3 -based single crystal without inheriting the crystal information of the vaporized material.
7. A method for producing a β-Ga 2 O 3 -based single crystal substrate, comprising processing the β-Ga 2 O 3 -based single crystal according to claim 1 into a β-Ga 2 O 3 -based single crystal substrate.
8. A method for producing a β-Ga 2 O 3 -based single crystal substrate, comprising:
processing the β-Ga 2 O 3 -based single crystal according to claim 1 into a second seed crystal;
growing a second β-Ga 2 O 3 -based single crystal from the second seed crystal; and
processing the second β-Ga 2 O 3 -based single crystal into a β-Ga 2 O 3 -based single crystal substrate.
9. The method for growing a β-Ga 2 O 3 -based single crystal according to claim 2 , wherein necking in the thickness direction allows the growth of the β-Ga 2 O 3 -based single crystal without inheriting the crystal information of the vaporized material.
10. The method for growing a β-Ga 2 O 3 -based single crystal according to claim 3 , wherein necking in the thickness direction allows the growth of the β-Ga 2 O 3 -based single crystal without inheriting the crystal information of the vaporized material.
11. The method for growing a β-Ga 2 O 3 -based single crystal according to claim 2 , wherein contacting the seed crystal with the Ga 2 O 3 -based melt after removing the vaporized material on the principal surface of the seed crystal in a vicinity of a bottom allows the growth of the β-Ga 2 O 3 -based single crystal without inheriting the crystal information of the vaporized material.
12. The method for growing a β-Ga 2 O 3 -based single crystal according to claim 3 , wherein contacting the seed crystal with the Ga 2 O 3 -based melt after removing the vaporized material on the principal surface of the seed crystal in a vicinity of a bottom allows the growth of the β-Ga 2 O 3 -based single crystal without inheriting the crystal information of the vaporized material.
13. The method for growing a β-Ga 2 O 3 -based single crystal according to claim 2 , wherein contacting the seed crystal with the Ga 2 O 3 -based melt without contacting the vaporized material on the principal surface of the seed crystal with the Ga 2 O 3 -based melt allows the growth of the β-Ga 2 O 3 -based single crystal without inheriting the crystal information of the vaporized material.
14. The method for growing a β-Ga 2 O 3 -based single crystal according to claim 3 , wherein contacting the seed crystal with the Ga 2 O 3 -based melt without contacting the vaporized material on the principal surface of the seed crystal with the Ga 2 O 3 -based melt allows the growth of the β-Ga 2 O 3 -based single crystal without inheriting the crystal information of the vaporized material.
15. A method for producing a β-Ga 2 O 3 -based single crystal substrate, comprising processing the β-Ga 2 O 3 -based single crystal according to claim 2 into a β-Ga 2 O 3 -based single crystal substrate.
16. A method for producing a β-Ga 2 O 3 -based single crystal substrate, comprising processing the β-Ga 2 O 3 -based single crystal according to claim 3 into a β-Ga 2 O 3 -based single crystal substrate.
17. A method for producing a β-Ga 2 O 3 -based single crystal substrate, comprising:
processing the β-Ga 2 O 3 -based single crystal according to claim 2 into a second seed crystal;
growing a second β-Ga 2 O 3 -based single crystal from the second seed crystal; and
processing the second β-Ga 2 O 3 -based single crystal into a β-Ga 2 O 3 -based single crystal substrate.
18. A method for producing a β-Ga 2 O 3 -based single crystal substrate, comprising:
processing the β-Ga 2 O 3 -based single crystal according to claim 3 into a second seed crystal;
growing a second β-Ga 2 O 3 -based single crystal from the second seed crystal; and
processing the second β-Ga 2 O 3 -based single crystal into a β-Ga 2 O 3 -based single crystal substrate.