Sensors, methods of making and devices
Disclosed sensors can include at least one resonator (in some embodiments, at least two resonators) and various other structures that may be formed in association with the resonators. The at least one resonator in embodiments can include a bottom electrode, a piezoelectric layer, and a top electrode, wherein the piezoelectric layer is positioned between the bottom electrode and the top electrode.
1. A sensor comprising:
at least a first resonator, the at least first resonator having a first surface and an opposing second surface and the first resonator comprising:
a bottom electrode;
a piezoelectric layer; and
a top electrode,
wherein the piezoelectric layer is positioned between the bottom electrode and the top electrode;
a metal oxide layer positioned on at least the second surface of the first resonator, the metal oxide layer having a thickness from about 10 Å to about 500 Å and the metal oxide layer comprising oxygen atoms;
a coupling layer comprising silicon atoms, the silicon atoms of the coupling layer bound to oxygen atoms in the metal oxide layer; and
a molecular recognition component layer, the molecular recognition layer comprising molecular recognition components and the molecular recognition components bound to the coupling layer.
2. The sensor according to claim 1 , further comprising at least a second resonator.
3. The sensor according to claim 2 , wherein the at least the first and second resonators are electrically connected in series.
4. The sensor according to claim 2 , wherein the at least first and second resonators have substantially the same shape.
5. The sensor according to claim 4 , wherein the at least first and second resonators have substantially semicircular shapes.
6. The sensor according to claim 4 , wherein the at least first and second resonators have substantially rectangular shapes.
7. The sensor according to claim 1 , wherein the metal oxide layer is selected from TiO 2 , SiO 2 , Al 2 O 3 , or ZnO.
8. The sensor according to claim 1 wherein the metal oxide layer has a thickness from about 75 Å to about 125 Å.
9. The sensor according to claim 1 , wherein the metal oxide layer is deposited using atomic layer deposition.
10. The sensor according to claim 9 , wherein the metal oxide layer is deposited over the entirety of the sensor.
11. The sensor according to claim 1 , wherein the coupling layer comprises an epoxy silane.
12. The sensor according to claim 1 , wherein the molecular recognition component is an antibody.
13. The sensor according to claim 1 , wherein the sensor further comprises a Bragg reflector stack positioned beneath the bottom electrode of at least the first resonator.