Thin film transistor device, method for manufacturing same and display device
View Patent ↗A TFT device including: a gate electrode; a channel layer above the gate electrode; a channel protection layer on the channel layer; an electrode pair on the channel protection layer composed of a source electrode and a drain electrode that are spaced away from one another, a part of each of the source electrode and the drain electrode in contact with the channel layer through the channel protection layer; and a passivation layer extending over the gate electrode, the channel layer, the electrode pair, and the channel protection layer. The channel layer is made of an oxide semiconductor. The TFT device has a first sub-layer made of one of silicon nitride and silicon oxynitride and in which Si—H density is no greater than 2.3×10 21 cm −3 . The first sub-layer is included in at least one of the channel protection layer and the passivation layer.
1. A thin film transistor device comprising:
a substrate;
a gate electrode above the substrate;
a channel layer above the gate electrode;
a channel protection layer on the channel layer;
an electrode pair on the channel protection layer, the electrode pair composed of a source electrode and a drain electrode that are spaced away from one another, a part of each of the source electrode and the drain electrode in contact with the channel layer through the channel protection layer; and
a passivation layer extending over the gate electrode, the channel layer, the electrode pair, and the channel protection layer, wherein
the channel layer is made of an oxide semiconductor, and
the thin film transistor device has a first sub-layer which is made of one of silicon nitride and silicon oxynitride and in which a density of H atoms bonded with Si atoms is no greater than 2.3×10 21 cm −3 , the first sub-layer included in at least one of the channel protection layer and the passivation layer.
2. The thin film transistor device of claim 1 , wherein
in the first sub-layer, the density of H atoms bonded with Si atoms is no greater than 1.3×10 21 cm −3 .
3. The thin film transistor device of claim 1 , wherein
the thin film transistor device has a second sub-layer which is made of one of silicon oxide and silicon oxynitride and such that when thermal desorption measurement is performed with respect to the second sub-layer, hydrogen is observed as desorption gas and within a temperature range of 300 degrees Celsius to 350 degrees Celsius, an average increase coefficient of the desorption gas does not take a positive value, the second sub-layer included in at least one of the channel protection layer and the passivation layer.
4. The thin film transistor device of claim 3 , wherein
the second sub-layer is included in the channel protection layer.
5. The thin film transistor device of claim 4 , wherein
the channel protection layer is made of silicon oxide, is formed at a rate between 50 nm/sec and 110 nm/sec, and has a refractive index between 1.454 and 1.461.
6. The thin film transistor device of claim 1 , wherein
the passivation layer includes a first layer, a second layer, and a third layer layered one on top of another with the first layer closest to the substrate,
at least one of the first layer and the third layer corresponds to the first sub-layer, and
the second layer is made of an Al compound.
7. The thin film transistor device of claim 6 , wherein
the second layer is made of AlOx.
8. The thin film transistor device of claim 6 , wherein
the passivation layer further includes a fourth layer on the third layer,
the third layer and the fourth layer are both made of silicon nitride, and
the fourth layer contains silicon nitride at a lower density than the third layer.
9. The thin film transistor device of claim 6 , wherein
the first layer is made of silicon oxide, and is in contact with the source electrode and the drain electrode.
10. A display device comprising:
the thin film transistor device of claim 1 .