Optoelectronic component and method for producing same

1. A method for producing an optoelectronic component, the method comprising:

forming an optoelectronic layer structure having a first adhesion layer, which comprises a first metallic material, above a carrier,

providing a covering body with a second adhesion layer, which comprises a second metallic material, wherein at least one of the first or the second adhesion layers are delimited in lateral direction by an anti-adhesion layer,

applying a first alloy to at least one of the two adhesion layers, which is delimited by the anti-adhesion layer, the melting point of said first alloy being so low that the first alloy is liquid, wherein the anti-adhesion layer is not wetted by the first alloy and keeps the first alloy in a region provided therefor,

coupling the covering body to the optoelectronic layer structure in such a way that both adhesion layers are in direct physical contact with the liquid first alloy, and

reacting at least part of the liquid first alloy chemically with the metallic materials of the adhesion layers, as a result of which at least one second alloy is formed, which has a higher melting point than the first alloy, wherein the melting point of the second alloy is so high that the second alloy solidifies and fixedly connects the covering body to the optoelectronic layer structure.

2. The method as claimed in claim 1 , wherein the melting point of the first alloy is in a range of between −20° C. and 100° C.

3. The method as claimed in claim 2 , wherein the first alloy is liquid at room temperature.

4. The method as claimed in claim 1 , wherein the first alloy comprises gallium, indium, tin, copper, molybdenum, silver and/or bismuth, and/or wherein the metallic material of at least one of the adhesion layers comprises aluminum, zinc, chromium, copper, molybdenum, silver, gold, nickel, gallium, indium and/or tin.

5. The method as claimed in claim 1 , wherein the covering body is formed by a cover plate and a carrier structure, which has the second adhesion layer, and wherein the covering body is coupled to the optoelectronic layer structure via the carrier structure.

6. The method as claimed in claim 5 , wherein the cover plate has a third adhesion layer, which comprises a third metallic material, and wherein the carrier structure has a fourth adhesion layer, which comprises a fourth metallic material, on a side of the carrier structure facing away from the second adhesion layer, and wherein the cover plate is coupled to the carrier structure by virtue of the fact that the liquid first alloy is applied to the third and/or the fourth adhesion layer and the carrier structure is coupled to the cover plate in such a way that the third and fourth adhesion layers are in direct physical contact with the first alloy, wherein at least part of the first alloy reacts chemically with the metallic materials of the third and fourth adhesion layers, as a result of which the second or at least one further alloy is formed, which solidifies and which thus fixedly connects the cover plate to the carrier structure.

7. The method as claimed in claim 5 , wherein the carrier structure is formed in a frame-shaped fashion, and wherein the first alloy is poured into the frame-shaped carrier structure, such that the carrier structure delimits the first alloy in a lateral direction.

8. The method as claimed in claim 5 , wherein the carrier structure is formed in a frame-shaped fashion in such a way that the carrier structure surrounds at least part of the optoelectronic layer structure in a lateral direction.

9. The method as claimed in claim 1 , wherein the optoelectronic layer structure has an encapsulation layer, and wherein the first adhesion layer is formed on the encapsulation layer.

10. The method as claimed in claim 1 , wherein the optoelectronic layer structure has a carrier structure having the first adhesion layer, and wherein the covering body is coupled to the optoelectronic layer structure via the carrier structure.

11. The method as claimed in claim 10 , wherein the optoelectronic layer structure has a fifth adhesion layer, which comprises a fifth metallic material, and wherein the carrier structure has a sixth adhesion layer, which comprises a sixth metallic material, on a side of the carrier structure facing away from the first adhesion layer, and wherein the carrier structure is coupled to the optoelectronic layer structure by virtue of the fact that the liquid first alloy is applied to the fifth and/or the sixth adhesion layer and the carrier structure is coupled to the optoelectronic layer structure in such a way that the fifth and sixth adhesion layers are in direct physical contact with the first alloy, wherein at least part of the first alloy reacts chemically with the metallic materials of the fifth and sixth adhesion layers, as a result of which the second or at least one further alloy is formed, which solidifies and which thus fixedly connects the optoelectronic layer structure to the carrier structure.

12. An optoelectronic component comprising:

a carrier,

an optoelectronic layer structure having a first adhesion layer, which comprises a first metallic material, above the carrier,

a covering body with a second adhesion layer, which comprises a second metallic material, and

at least one second alloy between the two adhesion layers and in direct physical contact with the two adhesion layers, wherein the covering body is coupled to the optoelectronic layer structure via the two adhesion layers and the second alloy,

wherein the second alloy is formed in a chemical reaction of a liquid first alloy, the melting point of which is lower than the melting point of the second alloy, and of the metallic materials of the first adhesion layer and the second adhesion layer and is solidified and thus fixedly connects the covering body to the optoelectronic layer structure, and

wherein at least one of the first and the second adhesion layers are delimited in lateral direction by an anti-adhesion layer, which is not wetted by the first alloy and which keeps the first alloy in a region provided therefor.

13. The optoelectronic component as claimed in claim 12 , wherein part of the first alloy is present in a liquid state between the covering body and the optoelectronic layer structure.

14. The optoelectronic component as claimed in claim 12 , wherein the melting point of the first alloy is in a range of between −20° C. and 100° C.

15. The optoelectronic component as claimed in claim 14 , wherein the first alloy is liquid at room temperature.

16. The optoelectronic component as claimed in claim 12 , wherein the first alloy comprises gallium, indium, tin and/or bismuth, and/or wherein the metallic material of at least one of the adhesion layers comprises aluminum, nickel, tin and/or chromium.

17. The optoelectronic component as claimed in claim 12 , wherein the covering body has a cover plate and a carrier structure having the second adhesion layer, and wherein the covering body is coupled to the optoelectronic layer structure via the carrier structure.

18. The optoelectronic component as claimed in claim 12 , wherein the optoelectronic layer structure has a carrier structure having the first adhesion layer, and wherein the covering body has a cover plate, which is coupled to the optoelectronic layer structure via the carrier structure.