Optoelectronic component and method for the production thereof
View Patent ↗A method for producing an optoelectronic component includes forming an optoelectronic layer structure including a functional layer structure above a carrier, forming a frame structure including a first metallic material on the optoelectronic layer structure such that a region above the functional layer structure is free of the frame structure and that the frame structure surrounds the region, forming an adhesion layer including a second metallic material above a covering body, applying a liquid first alloy to the optoelectronic layer structure and/or to the adhesion layer of the covering body in the region, coupling the covering body to the optoelectronic layer structure such that the adhesion layer is coupled to the frame structure and the liquid first alloy is in direct contact with the adhesion layer and the frame structure, and reacting part of the first alloy chemically with the metallic materials of the frame structure and the adhesion layer.
1. A method for producing an optoelectronic component, the method comprising:
forming an optoelectronic layer structure comprising a functional layer structure above a carrier,
forming a frame structure comprising a first metallic material on the optoelectronic layer structure in such a way that a region above the functional layer structure is free of the frame structure and that the frame structure surrounds the region,
forming an adhesion layer comprising a second metallic material above a covering body,
applying a liquid first alloy to the optoelectronic layer structure and/or to the adhesion layer of the covering body in the region,
coupling the covering body to the optoelectronic layer structure in such a way that the adhesion layer is coupled to the frame structure and the liquid first alloy is in direct physical contact with the adhesion layer and the frame structure, and
reacting at least part of the first alloy chemically with the metallic materials of the frame structure and the adhesion layer, as a result of which at least one second alloy is formed which solidifies and thus fixedly connects the covering body to the optoelectronic layer structure.
2. The method as claimed in claim 1 , wherein the melting point of the first alloy is in a range of between −20° C. and 100° C.
3. The method as claimed in claim 2 , wherein the first alloy is liquid at room temperature.
4. The method as claimed in claim 1 , wherein the first alloy comprises gallium, indium, tin, copper, molybdenum, silver and/or bismuth.
5. The method as claimed in claim 1 , wherein the first and/or second metallic material comprises aluminum, zinc, chromium, copper, molybdenum, silver, gold, nickel, gallium, indium and/or tin.
6. The method as claimed in claim 1 , wherein the optoelectronic layer structure comprises an encapsulation layer, and wherein the frame structure is formed on the encapsulation layer.
7. The method as claimed in claim 1 , wherein a first anti-adhesion layer is formed laterally adjacently to the frame structure at least in sections, the material of which first anti-adhesion layer does not react chemically with the first alloy and/or which first anti-adhesion layer is not wetted by the first alloy.
8. The method as claimed in claim 1 , wherein a second anti-adhesion layer is formed laterally adjacently to the adhesion layer above the covering body, the material of which second anti-adhesion layer does not react chemically with the first alloy and/or which first anti-adhesion layer is not wetted by the first alloy.
9. An optoelectronic component, comprising:
a carrier,
a optoelectronic layer structure comprising a functional layer structure above the carrier,
a frame structure comprising a first metallic material above the optoelectronic layer structure, wherein a region above the functional layer structure is free of the frame structure and the frame structure surrounds the region,
a covering body with an adhesion layer, which comprises a second metallic material and which is coupled to the frame structure,
a liquid first alloy arranged in the region on the optoelectronic layer structure, and
a second alloy, which emerges from a chemical reaction of the first alloy with the metallic materials of the frame structure and the adhesion layer, wherein the second alloy is rigid and fixedly connects the covering body to the optoelectronic layer structure.
10. The optoelectronic component as claimed in claim 9 , wherein the melting point of the first alloy is in a range of between −20° C. and 100° C.
11. The optoelectronic component as claimed in claim 10 , wherein the first alloy is liquid at room temperature.
12. The optoelectronic component as claimed in claim 9 , wherein the first alloy comprises gallium, indium, tin and/or bismuth.
13. The optoelectronic component as claimed in claim 9 , wherein the first and/or second metallic material comprises aluminum and/or zinc.
14. The optoelectronic component as claimed in claim 9 , wherein the optoelectronic layer structure comprises an encapsulation layer, and wherein the frame structure is formed on the encapsulation layer.