Optoelectronic semiconductor chip, optoelectronic component, and method of producing semiconductor chips

1. An optoelectronic component comprising an optoelectronic semiconductor chip and a housing body, said optoelectronic semiconductor chip comprising a carrier and a semiconductor body having an active layer that generates electromagnetic radiation during operation of the optoelectronic semiconductor chip, wherein

the semiconductor body is arranged on the carrier,

the semiconductor body has a first main surface facing away from the carrier and a second main surface facing the carrier,

a side surface of the optoelectronic semiconductor chip has an anchoring structure,

the second main surface is arranged between the first main surface and the anchoring structure,

the side surface has roughnesses,

the anchoring structure comprises a plurality of indentations formed in the carrier and spatially arranged apart from one another in a vertical direction, wherein a cross section of the indentations is at least three times larger than a cross section of the roughnesses of the side surface, and a depth of the indentations is at least three times larger than a depth of the roughnesses of the side surface, said depth of the indentation being a lateral extent of the indentation into the carrier, and

the housing body encloses the optoelectronic semiconductor chip in a lateral direction such that a material of the housing body engages into the anchoring structure, and the first main surface and a rear side of the optoelectronic semiconductor chip are free of the material of the housing body.

2. The optoelectronic component according to claim 1 , wherein the indentations are formed in the carrier and a structure size being a depth or a width of the indentations is between 2 μm and 20 μm inclusive.

3. The optoelectronic component according to claim 1 , wherein the indentations have different structure sizes and are spaced apart vertically from the second main surface, wherein with increasing distance from the second main surface, the indentations have structure sizes having increasing depth and width.

4. The optoelectronic component according to claim 1 , wherein the semiconductor chip is not covered by a growth substrate, and a mirror layer is arranged between the active layer and the carrier.

5. The optoelectronic component according to claim 4 , wherein, in a sectional view of the optoelectronic semiconductor chip, the mirror layer is delimited by a first electrically insulating partial layer in a lateral direction and the semiconductor body partly covers the first electrically insulating partial layer and completely covers the mirror layer.

6. The optoelectronic component according to claim 1 , wherein the housing body terminates flush with a rear side of the optoelectronic semiconductor chip in the vertical direction and

the optoelectronic semiconductor chip and the housing body have an identical height, or

the optoelectronic semiconductor chip has a larger height than the housing body such that the semiconductor body projects at least partly beyond the housing body.

7. An optoelectronic semiconductor chip comprising a carrier and a semiconductor body having an active layer that generates electromagnetic radiation during operation of the optoelectronic semiconductor chip, wherein

the semiconductor body is arranged on the carrier,

the semiconductor body has a first main surface facing away from the carrier and a second main surface facing the carrier,

a side surface of the optoelectronic semiconductor chip has an anchoring structure,

the second main surface is arranged between the first main surface and the anchoring structure,

the side surface has roughnesses,

the anchoring structure comprises a plurality of indentations formed in the carrier and spatially arranged apart from one another in a vertical direction, wherein a cross section of the indentations is at least three times larger than a cross section of the roughnesses of the side surface, and a depth of the indentations is at least three times larger than a depth of the roughnesses of the side surface, said depth of the indentation being a lateral extent of the indentation into the carrier, and

a mirror layer is arranged between the active layer and the carrier, wherein, in a sectional view of the optoelectronic semiconductor chip, the mirror layer is delimited by a first electrically insulating partial layer in a lateral direction, said first electrically insulating partial layer being arranged in the vertical direction between the semiconductor body and the carrier, and wherein the semiconductor body partly covers the first electrically insulating partial layer and completely covers the mirror layer.

8. An optoelectronic component comprising the optoelectronic semiconductor chip according to claim 7 and a housing body, wherein

the housing body encloses the optoelectronic semiconductor chip in a lateral direction such that the housing body engages into the anchoring structure on the side surface of the optoelectronic semiconductor chip,

the housing body completely covers the side surface of the optoelectronic semiconductor chip at least between a rear side of the optoelectronic semiconductor chip and the second main surface of the semiconductor body, and

the first main surface of the semiconductor body is free of the housing body.

9. An optoelectronic component comprising a semiconductor chip according to claim 7 and an optical element, wherein

the optical element encloses the semiconductor chip in a lateral direction such that the optical element engages into the anchoring structure,

the optical element has the form of a lens, and

the optical element completely covers the first main surface and the side surface.

10. An optoelectronic component comprising the optoelectronic semiconductor chip according to claim 7 and a housing body, wherein the housing body encloses the optoelectronic semiconductor chip in a lateral direction such that a material of the housing body engages into the anchoring structure.

11. The optoelectronic component according to claim 10 , wherein the housing body terminates flush with a rear side of the optoelectronic semiconductor chip in the vertical direction and the first main surface of the semiconductor body or of the optoelectronic semiconductor chip in the vertical direction.

12. The optoelectronic component according to claim 7 , wherein a region of the first electrically insulating partial layer covered by the semiconductor body is arranged in the vertical direction between the semiconductor body and the carrier.

13. The optoelectronic component according to claim 10 , wherein the optoelectronic semiconductor chip and the housing body have an identical height.