Optoelectronic semiconductor chip comprising a multi-quantum well comprising at least one high barrier layer
View Patent ↗An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, and an active layer embodied as a multi-quantum well structure arranged between the p-type semiconductor region and the n-type semiconductor region. The multi-quantum well structure includes a plurality of alternating quantum well layers and barrier layers. At least one barrier layer, which is arranged closer to the p-type semiconductor region than to the n-type semiconductor region, is a high barrier layer that has an electronic band gap that is greater than an electronic band gap of the remaining barrier layers.
1. An optoelectronic semiconductor chip, comprising:
a p-type semiconductor region;
an n-type semiconductor region; and
an active layer arranged between the p-type semiconductor region and the n-type semiconductor region, the active layer comprising a multiple quantum well structure, the multiple quantum well structure having a plurality of alternating quantum well layers and barrier layers, wherein a barrier layer arranged closer to the p-type semiconductor region than to the n-type semiconductor region is a high barrier layer having an electronic band gap E hb that is larger than an electronic band gap E b of other barrier layers, and wherein a quantum well layer that adjoins the high barrier layer on a side facing towards the p-type semiconductor region has an electronic band gap E lw that is smaller than a band gap E w of other quantum well layers.
2. The optoelectronic semiconductor chip according to claim 1 , wherein the high barrier layer has a band gap E hb for which the following applies: E hb −E b ≧0.05 eV.
3. The optoelectronic semiconductor chip according to claim 1 , wherein the multiple quantum well structure has not more than 10 high barrier layers.
4. The optoelectronic semiconductor chip according to claim 3 , wherein first k barrier layers starting from the p-type semiconductor region are high barrier layers, and wherein k is a number between 1 and 10.
5. The optoelectronic semiconductor chip according to claim 1 , wherein the multiple quantum well structure has just one high barrier layer.
6. The optoelectronic semiconductor chip according to claim 5 , wherein the high barrier layer is arranged between a quantum well layer that is a m th quantum well layer starting from the p-type semiconductor region and an immediately adjacent quantum well layer, and wherein m is a number between 1 and 20.
7. The optoelectronic semiconductor chip according to claim 6 , wherein m=1.
8. The optoelectronic semiconductor chip according to claim 1 , wherein the multiple quantum well structure has a plurality of high barrier layers that are arranged closer to the p-type semiconductor region than to the n-type semiconductor region.
9. The optoelectronic semiconductor chip according to claim 1 , wherein the high barrier layer and the other barrier layers each comprise In x Al y Ga 1-x-y P or In x Al y Ga 1-x-y N, where 0≦x≦1, 0≦y≦1 and x+y≦1, and wherein an aluminum content y of the high barrier layer is greater than an aluminum content y of the other barrier layers.
10. The optoelectronic semiconductor chip according to claim 1 , wherein the high barrier layer and the other barrier layers each comprise In x Al y Ga 1-x-y As, where 0≦x≦1, 0≦y≦1 and x+y≦1, and wherein an aluminum content y of the high barrier layer is greater than an aluminum content y of the other barrier layers.
11. The optoelectronic semiconductor chip according to claim 1 , wherein the chip includes at least 10 barrier layers.
12. The optoelectronic semiconductor chip according to claim 11 , wherein the chip includes at least 20 other barrier layers.
13. The optoelectronic semiconductor chip according to claim 1 , wherein the other barrier layers having the band gap E b is at least 5 times as great as a number of high barrier layer(s) having the increased band gap E hb .
14. The optoelectronic semiconductor chip according to claim 1 , wherein the other barrier layers having the band gap E b is at least 10 times as great as a number of high barrier layer(s) having the increased band gap E hb .
15. The optoelectronic semiconductor chip according to claim 1 , wherein the quantum well layer that adjoins the high barrier layer on the side facing towards the p-type semiconductor region has a thickness that is greater than a thickness of other quantum well layers.