Silicon carbide semiconductor substrate, method for manufacturing silicon carbide semiconductor substrate, and method for manufacturing silicon carbide semiconductor device
A silicon carbide semiconductor substrate includes: a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made of single-crystal silicon carbide; and an epitaxial layer formed on the main surface. The silicon carbide semiconductor substrate has an amount of warpage of not less than −100 μm and not more than 100 μm when a substrate temperature is a room temperature and has an amount of warpage of not less than −1.5 mm and not more than 1.5 mm when the substrate temperature is 400° C.
1. A silicon carbide semiconductor substrate comprising:
a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made of single-crystal silicon carbide; and
an epitaxial layer made of silicon carbide formed on said main surface,
said silicon carbide semiconductor substrate having an amount of warpage of not less than −100 μm and not more than 100 μm when a substrate temperature is a room temperature and having an amount of warpage of not less than −1.5 mm and not more than 1.5 mm when the substrate temperature is 400° C.,
wherein said base substrate has a thickness of not less than 200 μm and not more than 700 μm in a direction perpendicular to said main surface.
2. A silicon carbide semiconductor substrate comprising:
a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made of single-crystal silicon carbide; and
an epitaxial layer made of silicon carbide formed on said main surface,
said silicon carbide semiconductor substrate having an amount of warpage of not less than −100 μm and not more than 100 μm when a substrate temperature is a room temperature and having an amount of warpage of not less than −1.5 mm and not more than 1.5 mm when the substrate temperature is 400° C.,
wherein said base substrate has a backside surface opposite to said main surface and having a surface roughness of not more than 10 nm.
3. A silicon carbide semiconductor substrate comprising:
a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made of single-crystal silicon carbide, the base substrate having a thickness of not less than 200 μm and not more than 700 μm in a direction perpendicular to said main surface; and
an epitaxial layer formed on said main surface,
said silicon carbide semiconductor substrate having an amount of warpage of not less than −100 μm and not more than 100 μm when a substrate temperature is a room temperature and having an amount of warpage of not less than −1.5 mm and not more than 1.5 mm when the substrate temperature is 400° C.,
wherein a damaged layer of the base substrate from a surface opposite the main surface of the base substrate is removed.