Method of producing an optoelectronic device and optoelectronic device

1. A method of producing an optoelectronic device comprising:

A) providing a substrate,

B) applying a first electrode to the substrate,

C) applying a first organic layer stack to the first electrode,

D) producing a charge-generating layer stack on the first organic layer stack,

E) applying a second organic layer stack to the charge-generating layer stack,

F) applying a second electrode to the second organic layer stack,

wherein step D) comprises:

D1) applying a solution of a first metal oxide precursor to the first organic layer stack, wherein the solution of the first metal oxide precursor and the first organic layer have the same temperature between 30° C. to 60° C. and the solution of the first metal oxide precursor and the first organic layer stack are heated, prior to step D1) to the same temperature of 30° C. to 60° C.,

D2) generating a first charge-generating layer comprising a first metal oxide,

D3) applying a solution of a second metal oxide precursor to the first charge-generating layer, wherein the solution of the second metal oxide precursor and the first charge-generating layer have a temperature of 30° C. to 60° C. and the solution of the second metal oxide precursor and the first charge-generating layer are heated, prior to step D3), to the same temperature of 30° C. to 60° C.,

D4) generating a second charge-generating layer comprising a second metal oxide.

2. The method according to claim 1 , wherein a solution of the first metal oxide precursor is applied in step D1) by coating methods, spin-coating, spraying or printing methods and/or a solution of the second metal oxide precursor is applied in step D3) by coating methods, spin-coating, spraying or printing methods.

3. The method according to claim 1 , wherein a solution of the first metal oxide precursor is filtered prior to step D1) and/or a solution of the second metal oxide precursor is filtered prior to step D3).

4. The method according to claim 1 , wherein in step B) an anode is selected as the first electrode and in step D1) a first electron-conductive metal oxide precursor is selected as the first metal oxide precursor and in step D3) a second electron-conductive metal oxide precursor is selected as the second metal oxide precursor or wherein in step B) a cathode is selected as the first electrode and in step D1) a second electron-conductive metal oxide precursor is selected as the first metal oxide precursor and in step D3) a first electron-conductive metal oxide precursor is selected as the second metal oxide precursor.

5. The method according to claim 4 , wherein the first electron-conductive metal oxide precursor is selected from the group consisting of ZnO-, SnO-, TiO 2 -precursors or combinations thereof, and wherein the second electron-conductive metal oxide precursor is selected from the group consisting of V 2 O 5 -, Nb 2 O 5 -, Ta 2 O 5 -, MoO 3 -, WO 3 -precursors and combinations thereof.

6. The method according to claim 4 , wherein the first electron-conductive metal oxide precursor has formula A or A′:

where R 1 , R 2 , R 3 , R 4 , R 5 and R 6 can be selected to be the same or different and are selected from the group consisting of H and alkyl residues, M 1 =Zn or Sn and n=1 or 2.

7. The method according to claim 6 , wherein R 1 , R 2 , R 4 and R 5 =CH 3 and R 3 and R 6 =H.

8. The method according to claim 7 , wherein M 1 =Zn.

9. The method according to claim 4 , wherein the second electron-conductive metal oxide precursor has one of formulae B, C or D:

where in formula B:

R 1′ , R 2′ and R 3′ can be selected to be the same or different and are selected from the group consisting of methyl-, ethyl-, n-propyl, i-propyl, n-butyl-, i-butyl, sec-butyl and tert-butyl residues and

M 2 =V, Nb or Ta,

where in formula C:

R 1″ , R 2″ , R 3″ , R 4″ and R 5″ can be selected to be the same or different and are selected from the group consisting of methyl-, ethyl-, n-propyl, i-propyl, n-butyl-, i-butyl, sec-butyl and tert-butyl residues and

M 3 =W or Mo,

and where in formula D:

R 1′″ , R 2′″ , R 3′″ , R 4′″ , R 5′″ and R 6′″ can be selected to be the same or different and are selected from the group consisting of methyl-, ethyl-, n-propyl, i-propyl, n-butyl-, i-butyl, sec-butyl and tert-butyl residues and

M 4 =W or Mo.

10. The method according to claim 9 , where the second electron-conductive metal oxide precursor has formula B:

where M 2 =V.

11. The method according to claim 10 , wherein R 1′ , R 2′ and R 3′ =i-propyl.

12. The method according to claim 1 , wherein in a step prior to D1) the first metal oxide precursor is dissolved in a first organic solvent and in a step prior to D3) the second metal oxide precursor is dissolved in a second organic solvent and wherein the first and second organic solvents are selected independently of one another from the group consisting of water, ethanol, 2-methoxyethanol, 2-propanol, 1-propanol, 1-butanol, 2-butanol and combinations thereof.

13. A method of producing an optoelectronic device comprising:

A) providing a substrate,

B) applying an anode to the substrate,

C) applying a first organic layer stack to anode,

D) producing a charge-generating layer stack on the first organic layer stack,

E) applying a second organic layer stack to the charge-generating layer stack,

F) applying a cathode to the second organic layer stack,

wherein step D) comprises:

D1) applying a solution of a first electron-conductive metal oxide precursor to the first organic layer stack, wherein the solution of the first metal oxide precursor and the first organic layer have the same temperature of 30° C. to 60° C. and the solution of the first metal oxide precursor and the first organic layer stack are heated, prior to step D1) to the same temperature of 30° C. to 60° C. and wherein the first electron-conductive metal oxide precursor has formula A or A′:

where R 1 , R 2 , R 3 , R 4 , R 5 and R 6 can be selected to be the same or different and are selected from the group consisting of H and alkyl residues, M 1 =Zn or Sn and n=1 or 2,

D2) generating a first charge-generating layer comprising a first metal oxide,

D3) applying a solution of a second electron-conductive metal oxide precursor to the first charge-generating layer, wherein the solution of the second metal oxide precursor and the first charge-generating layer have a temperature of 30° C. to 60° C. and the solution of the second metal oxide precursor and the first charge-generating layer are heated, prior to step D3), to the same temperature of 30° C. to 60° C. and wherein the second electron-conductive metal oxide precursor has one of formulae B, C or D:

where in formula B:

R 1′ , R 2′ and R 3′ can be selected to be the same or different and are selected from the group consisting of methyl-, ethyl-, n-propyl, i-propyl, n-butyl-, i-butyl, sec-butyl and tert-butyl residues and

M 2 =V, Nb or Ta,

where in formula C:

R 1″ , R 2″ , R 3″ , R 4″ and R 5″ can be selected to be the same or different and are selected from the group consisting of methyl-, ethyl-, n-propyl, i-propyl, n-butyl-, i-butyl, sec-butyl and tert-butyl residues and

M 3 =W or Mo,

and where in formula D:

R ′″ , R 2′″ , R 3′″ , R 4′″ , R 5′″ and R 6′″ can be selected to be the same or different and are selected from the group consisting of methyl-, ethyl-, n-propyl, i-propyl, n-butyl-, i-butyl, sec-butyl and tert-butyl residues and

M 4 =W or Mo,

D4) generating a second charge-generating layer comprising a second metal oxide.

14. The method according to claim 13 , wherein the second charge-generating layer is generated directly on the first charge-generating layer.