Method of evaluating thin-film transistor, method of manufacturing thin-film transistor, and thin-film transistor
View Patent ↗A method of evaluating a thin-film transistor (TFT) which is disposed on a substrate, and includes at least: an oxide semiconductor layer which functions as a channel layer; and a channel protection layer disposed above the oxide semiconductor layer. The method includes: measuring a change in a reflectance of a microwave emitted to the oxide semiconductor layer while the oxide semiconductor layer is irradiated with excitation light by pulse irradiation; calculating a decay period which is a period of time taken for the reflectance to decay to 1/e or 1/e 2 , based on the change in the reflectance obtained in the measuring; and performing determination related to a threshold voltage of the oxide semiconductor layer, based on the decay period calculated in the calculating.
1. A method performed by a measuring device for evaluating a thin-film transistor which is disposed on a substrate, and includes at least: an oxide semiconductor layer which functions as a channel layer; and a channel protection layer disposed above the oxide semiconductor layer, the measuring device including a pulse laser that emits pulsed light, a microwave oscillator that outputs a microwave, a waveguide assembly, and a signal processing device, the method comprising:
measuring a change in a reflectance of the microwave emitted to the oxide semiconductor layer while the oxide semiconductor layer is irradiated with excitation light by pulse irradiation;
calculating a decay period which is a period of time taken for the reflectance to decay from a first value to a second value, based on the change in the reflectance obtained in the measuring; and
performing determination related to a threshold voltage of the oxide semiconductor layer, based on the decay period calculated in the calculating.
2. The method of evaluating the thin-film transistor according to claim 1 , wherein
the decay period comprises at least one of
a period of time taken for the reflectance to decay from a peak value to 1/e of the peak value,
a period of time taken for the reflectance to decay from 1/e of the peak value to 1/e 2 of the peak value, or
a period of time taken for the reflectance to decay from the peak value to 1/e 2 of the peak value, e being a base of natural logarithm.
3. The method of evaluating the thin-film transistor according to claim 1 , wherein
the determination related to the threshold voltage comprises at least one of identification of the threshold voltage, or determination of whether or not the threshold voltage falls within a predetermined range.
4. The method of evaluating the thin-film transistor according to claim 1 , wherein
in the performing of determination, the threshold voltage of the oxide semiconductor layer corresponding to the decay period calculated in the calculating is identified by referring to a pre-calculated relation between a decay period and a threshold voltage.
5. A method performed by a measuring device for evaluating a thin-film transistor which is disposed on a substrate, and includes at least: an oxide semiconductor layer which functions as a channel layer; and a channel protection layer disposed above the oxide semiconductor layer, the measuring device including a pulse laser that emits pulsed light, a microwave oscillator that outputs a microwave, a waveguide assembly, and a signal processing device, the method comprising:
measuring a change in a reflectance of the microwave emitted to the oxide semiconductor layer while the oxide semiconductor layer is irradiated with excitation light by pulse irradiation;
calculating at least one of a decay period which is a period of time taken for the reflectance to decay from a first value to a second value, or a peak value of the reflectance, based on the change in the reflectance obtained in the measuring; and
performing determination related to a resistance value of the oxide semiconductor layer, based on the decay period or the peak value calculated in the calculating.
6. The method of evaluating the thin-film transistor according to claim 5 , wherein
the decay period comprises at least one of
a period of time taken for the reflectance to decay from a peak value to 1/e of the peak value,
a period of time taken for the reflectance to decay from 1/e of the peak value to 1/e 2 of the peak value, or
a period of time required for the reflectance to decay from the peak value to 1/e 2 of the peak value, e being a base of natural logarithm.
7. The method of evaluating the thin-film transistor according to claim 5 , wherein
the determination related to the resistance value is at least one of identification of the resistance value, or determination of whether or not the resistance value falls within a predetermined range.
8. The method of evaluating the thin-film transistor according to claim 6 , wherein
in the performing of determination, the resistance value of the oxide semiconductor layer corresponding to the at least one of the decay period or the peak value calculated in the calculating is identified by referring to a pre-calculated relation between a decay period or peak value and a resistance value.
9. The method of evaluating the thin-film transistor according to claim 1 , wherein
the thin-film transistor is subjected to a first annealing treatment after forming of the channel protection layer, the first annealing treatment being for stabilizing the channel protection layer, and
the measuring is performed subsequent to the first annealing treatment.
10. The method of evaluating the thin-film transistor according to claim 1 , wherein
the thin-film transistor further includes a source electrode and a drain electrode which are disposed above the channel protection layer, and an interlayer insulating layer disposed above the source electrode and the drain electrode, and
the measuring is performed after forming of the interlayer insulating layer.
11. The method of evaluating the thin-film transistor according to claim 10 , wherein
the thin-film transistor is subjected to a second annealing treatment after forming of the interlayer insulating layer, the second annealing treatment being for stabilizing the interlayer insulating layer, and
the measuring is performed subsequent to the second annealing treatment.
12. The method of evaluating the thin-film transistor according to claim 1 , further comprising
positioning a measurement position to change a target position of the measurement performed in the measuring,
wherein the measuring, the calculating, and the performing of determination are performed on the target position changed in the positioning.
13. The method of evaluating the thin-film transistor according to claim 12 , wherein
the oxide semiconductor layer is formed by a sputtering method targeting a plurality of strip regions arranged at regular intervals on the substrate, and
in the positioning, the target position of the measurement is changed to perform the measurement in the measuring on each of the plurality of strip regions and each of regions between adjacent ones of the strip regions.
14. The method of evaluating the thin-film transistor according to claim 12 , wherein
the target position of measurement comprises a plurality of target positions of measurement, and the target position is sequentially changed among the plurality of target positions in the positioning, the plurality of target positions being arranged according to a tendency of at least one of (i) an increasing film thickness of the oxide semiconductor layer, (ii) a decreasing film thickness of the oxide semiconductor layer, (iii) a deteriorating film quality of the oxide semiconductor layer, or (iv) an improving film quality of the oxide semiconductor layer.
15. The method of evaluating the thin-film transistor according to claim 12 , wherein
the target position of measurement comprises a plurality of target positions of measurement, and the target position is sequentially changed among the plurality of target positions in the positioning, the plurality of target positions being arranged according to a tendency of at least one of (i) an increasing temperature in an annealing treatment performed on the thin-film transistor or (ii) a decreasing temperature in the annealing treatment.
16. The method of evaluating the thin-film transistor according to claim 1 ,
wherein the microwave has a frequency of 10 GHz or higher.
17. The method of evaluating the thin-film transistor according to claim 1 ,
wherein the excitation light has a wavelength of 500 nm or shorter.
18. A method of manufacturing a thin-film transistor, comprising:
forming the oxide semiconductor layer above the substrate, the oxide semiconductor layer functioning as the channel layer;
forming the channel protection layer above the oxide semiconductor layer; and
performing the method of evaluating the thin-film transistor according to claim 1 .
19. A thin-film transistor formed on a substrate, comprising:
the oxide semiconductor layer which functions as the channel layer; and
the channel protection layer formed above the oxide semiconductor layer,
wherein the threshold voltage ranges from 1.5 V to 1.9 V or a resistance value ranges from 10 9 to 10 11 Ω, the threshold voltage and the resistance value being identified using the method of evaluating the thin-film transistor according to claim 1 .