IP Library Granted Patent US 9,785,384
Granted Patent B2
US 9,785,384 · App. 14/918,062 · Granted Oct 10, 2017

Semiconductor storage device and method for controlling nonvolatile semiconductor memory

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,785,384
App. No.
14/918,062
Granted
Oct 10, 2017
Kind
B2
Abstract

According to embodiments, a controller comprises a write control unit that performs writing in a nonvolatile semiconductor memory, and an area management unit that causes the write control unit to perform write processing until a spare area not storing valid data is not present in the nonvolatile semiconductor memory, and transmits an error to a host when the spare area is not present.

Claims (17)

1. A semiconductor storage device comprising:

a nonvolatile semiconductor memory; and

a controller configured to

when receiving a write instruction and first data specified by a write instruction from a host, and in a case where a first amount does not exceed a current storage capacity of the nonvolatile semiconductor memory, write the first data to the nonvolatile semiconductor memory based on the received write instruction, the first amount being a sum of current amount of valid data in the nonvolatile semiconductor memory and data amount corresponding to addresses which are unwritten in the nonvolatile semiconductor memory among logical addresses contained in the received write instruction.

2. The semiconductor storage device according to claim 1 , wherein, in a case where the first amount exceeds the current storage capacity of the nonvolatile semiconductor memory, the controller notifies the host of an error.

3. The semiconductor storage device according to claim 1 , wherein the current storage capacity of the nonvolatile semiconductor memory is derived by adding a spare storage area capacity to a storage area capacity corresponding to a logical address designated by the host and subtracting a bad area capacity unusable as a storage area therefrom.

4. The semiconductor storage device according to claim 2 , wherein, when the first amount lowers the current storage capacity of the nonvolatile semiconductor memory by executing a deletion instruction, the controller enables a write processing instructed by the host again.

5. The semiconductor storage device according to claim 1 , wherein the controller notifies the host of the current amount of valid data in the nonvolatile semiconductor memory and the current storage capacity of the nonvolatile semiconductor memory in response to a request from the host.

6. A method for controlling a nonvolatile semiconductor memory, the method comprising:

when receiving a write instruction and first data specified by a write instruction from a host, and in a case where a first amount does not exceed a current storage capacity of the nonvolatile semiconductor memory, writing the first data to the nonvolatile semiconductor memory based on the received write instruction, the first amount being a sum of current amount of valid data in the nonvolatile semiconductor memory and data amount corresponding to addresses which are unwritten in the nonvolatile semiconductor memory among logical addresses contained in the received write instruction.

7. The method according to claim 6 , further comprising

in a case where the first amount exceeds the current storage capacity of the nonvolatile semiconductor memory, notifying the host of an error.

8. The method according to claim 6 , wherein the current storage capacity of the nonvolatile semiconductor memory is derived by adding a spare storage area capacity to a storage area capacity corresponding to a logical address designated by the host and subtracting a bad area capacity unusable as a storage area therefrom.

9. The method according to claim 7 , further comprising

when the first amount lowers the current storage capacity of the nonvolatile semiconductor memory by executing a deletion instruction, enabling a write processing instructed by the host again.

10. The method according to claim 6 , further comprising

notifying the host of the current amount of valid data in the nonvolatile semiconductor memory and the current storage capacity of the nonvolatile semiconductor memory in response to a request from the host.

Assignments (4)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 5, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043088/0620 →