Semiconductor device and method for fabricating the same
View Patent ↗A semiconductor device includes: a first substrate including a first surface layer that includes first and second electrodes; a second substrate including a second surface layer that includes third and fourth electrodes, and directly bonded to the first substrate such that the second surface layer is in contact with the first surface layer; and a functional film provided between the second and fourth electrodes. The first and third electrodes are bonded together so as to be in contact with each other, and the second electrode, the functional film, and the fourth electrode constitute a passive element.
1. A semiconductor device comprising:
a first substrate including a first substrate body, and a first surface layer that is provided over a principal surface of the first substrate body, and includes a first surface film, a first electrode having a first surface exposed at an outermost surface of the first surface film, and a second electrode having a second surface exposed at the outermost surface of the first surface film;
a second substrate including a second substrate body, and a second surface layer that is provided over a principal surface of the second substrate body, and includes a second surface film, a third electrode having a third surface exposed at an outermost surface of the second surface film, and a fourth electrode having a fourth surface exposed at the outermost surface of the second surface film, where the second substrate is directly bonded to the first substrate such that the second surface layer is in contact with the first surface layer; and
a functional film provided between the second surface of the second electrode and the fourth surface of the fourth electrode, wherein
the outermost surface of the first surface film, the first surface of the first electrode and the second surface of the second electrode are planarized flush with each other,
the outermost surface of the second surface film, the third surface of the third electrode and the fourth surface of the fourth electrode are planarized flush with each other,
the first surface of the first electrode and the third surface of the third electrode are bonded together so as to be in contact with each other, and
the second electrode, the functional film, and the fourth electrode constitute a passive element.
2. The semiconductor device of claim 1 , wherein a size of the functional film in plan view is greater than each of a size, in plan view, of a portion of the second electrode exposed from the first surface film and a size, in plan view, of a portion of the fourth electrode exposed from the second surface film.
3. The semiconductor device of claim 1 , wherein
the functional film is an insulating film, and
the second electrode, the functional film, and the fourth electrode constitute a capacitor element.
4. The semiconductor device of claim 3 , wherein the functional film is made of SiO x , SiN x , HfO x , or HfSiO x .
5. The semiconductor device of claim 1 , wherein
the functional film is a film made of a high-resistance metal, and
the second electrode, the functional film, and the fourth electrode constitute a resistance element.
6. The semiconductor device of claim 5 , wherein the high-resistance metal is constantan, nickel silver, cobalt-tungsten-phosphorus, or nickel boron.
7. The semiconductor device of claim 1 , wherein the first, second, third, and fourth electrodes are each made of aluminum, copper, nickel, or tungsten.
8. The semiconductor device of claim 1 , wherein the first substrate includes a first through electrode passing through the first substrate body.
9. The semiconductor device of claim 1 , wherein the second substrate includes a second through electrode passing through the second substrate body.