IP Library Granted Patent US 10,367,194
Granted Patent B2
US 10,367,194 · App. 14/921,126 · Granted Jul 30, 2019

Secondary battery and manufacturing method of the same

Inventors: Junya Goto (Kanagawa, JP); Mako Motoyoshi (Kanagawa, JP); Yuika Sato (Kanagawa, JP); Takahiro Kawakami (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01M4/364H01M4/0445H01M4/131H01M4/133H01M4/134H01M4/485H01M4/587H01M4/625H01M4/70H01M2004/027
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Quick Facts
Patent No.
US 10,367,194
App. No.
14/921,126
Granted
Jul 30, 2019
Kind
B2
Abstract

A negative electrode and a secondary battery including the negative electrode are provided. A plurality of projections and depressions are provided in a negative electrode active material layer and a negative electrode current collector. The plurality of projections and depressions in the negative electrode active material layer absorb expansion of the negative electrode active material and suppress deformation thereof. The plurality of projections and depressions in the negative electrode current collector suppress deformation of the negative electrode current collector caused by expansion and contraction of the negative electrode active material.

Claims (37)

1. A secondary battery comprising:

a negative electrode;

a positive electrode;

an electrolyte solution; and

a separator,

wherein the negative electrode includes a negative electrode current collector and a negative electrode active material layer,

wherein the negative electrode current collector includes a first surface and a second surface opposite to the first surface,

wherein the negative electrode active material layer is positioned on a first surface side,

wherein the negative electrode active material layer comprises SiO y (2>y>0), and wherein the SiO y comprises an amorphous silicon,

wherein the negative electrode active material layer includes a first depression and a second depression,

wherein the negative electrode current collector includes a third depression and a fourth depression on the first surface,

wherein the negative electrode current collector includes a first projection and a second projection on the second surface,

wherein the first depression, the third depression and the first projection overlap each other,

wherein the second depression, the fourth depression and the second projection overlap each other,

and

wherein, in a top view of the negative electrode, each of the first depression, the second depression, the third depression, and the fourth depression has a linear shape.

2. The secondary battery according to claim 1 , wherein the negative electrode current collector is exposed at a bottom of the first depression.

3. The secondary battery according to claim 1 , wherein the SiO y comprises SiO y (0.95≤y≤1.05).

4. The secondary battery according to claim 1 , further comprising a graphene on a surface of the negative electrode active material layer.

5. A secondary battery comprising a positive electrode and a negative electrode, the negative electrode comprising:

a negative electrode current collector; and

a negative electrode active material layer,

wherein the negative electrode current collector includes a first surface and a second surface opposite to the first surface,

wherein the negative electrode active material layer is positioned on a first surface side,

wherein the negative electrode active material layer comprises SiO y (2>y>0), and wherein the SiO y comprises an amorphous silicon,

wherein the negative electrode active material layer includes a first depression and a second depression,

wherein the negative electrode current collector includes a third depression and a fourth depression on the first surface,

wherein the negative electrode current collector includes a first projection and a second projection on the second surface,

wherein the first depression, the third depression and the first projection overlap each other,

wherein the second depression, the fourth depression and the second projection overlap each other,

wherein, in a top view of the negative electrode, a long side of the third depression and a long side of the fourth depression are parallel to a short side of the negative electrode current collector, and

wherein a length of the long side of the third depression and a length of the long side of the fourth depression are 80% or more and 100% or less of a length of the short side of the negative electrode current collector.

6. The secondary battery according to claim 5 , wherein the negative electrode current collector is exposed at a bottom of the first depression.

7. The secondary battery according to claim 5 , wherein the SiO y comprises SiO y (0.95≤y≤1.05).

8. The secondary battery according to claim 5 , further comprising a graphene on a surface of the negative electrode active material layer.

9. The secondary battery according to claim 1 , wherein each of the first depression, the second depression, the third depression, and the fourth depression has a long side which is parallel to a short side of the negative electrode current collector.

10. The secondary battery according to claim 1 , wherein a depth of the first depression is different from a depth of the second depression.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 23, 2015
From: GOTO, JUNYA; MOTOYOSHI, MAKO; SATO, YUIKA; KAWAKAMI, TAKAHIRO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 036867/0826 →
Priority Claims (1)
JP 2014-217229 · Oct 24, 2014 · national
Continuity (1)
Related Publication 20160126541A1 · May 5, 2016