Color image sensor and method of manufacturing the same
A color image sensor including an array of pixels is formed in a semiconductor layer having a back side that receives an illumination. Insulated conductive walls penetrate into the semiconductor layer from the back side and separate the pixels from one another. For each pixel, a color pixel penetrates into from 5 to 30% of a thickness of the semiconductor layer from the back side and occupies at least 90% of the surface area delimited by the walls. An electrically-conductive layer extends from the lateral wall of the filter all the way to the walls.
1. A color image sensor comprising:
a semiconductor layer having a back side to receive an illumination;
an array of pixels in said semiconductor layer;
insulated conductive walls penetrating into said semiconductor layer from the back side and separating the pixels from one another; and
for each pixel, a color filter penetrating into from 5 to 30% of a thickness of said semiconductor layer from the back side and occupying at least 90% of a surface area delimited by the insulated conductive walls, and with an electrically-conductive layer extending from a lateral wall of the color filter to the insulated conductive walls.
2. The color image sensor of claim 1 , wherein the insulated conductive walls comprise an electrically-conductive material coated with an insulating layer, and the electrically-conductive layer comprises the electrically-conductive material.
3. The color image sensor of claim 2 , wherein the electrically-conductive material is opaque to light.
4. The color image sensor of claim 2 , wherein the insulated conductive walls penetrate into at least three quarters of a thickness of said semiconductor layer.
5. An image sensor comprising:
a semiconductor layer having a back side to receive an illumination;
an array of pixels in said semiconductor layer;
insulated conductive walls penetrating into said semiconductor layer from the back side and separating the pixels from one another; and
for each pixel, a filter penetrating into from 5 to 30% of a thickness of said semiconductor layer from the back side and occupying at least 90% of a surface area delimited by the insulated conductive walls, and with an electrically-conductive layer extending from a lateral wall of the filter all the way to the insulated conductive walls.
6. The image sensor of claim 5 , wherein the insulated conductive walls comprise an electrically-conductive material coated with an insulating layer, and the electrically-conductive layer comprises the electrically-conductive material.
7. The image sensor of claim 6 , wherein the electrically-conductive material is opaque to light.
8. The image sensor of claim 5 , wherein the insulated conductive walls penetrate into at least three quarters of a thickness of said semiconductor layer.