Semiconductor device in which an electrode of a semiconductor element is joined to a joined member and methods of manufacturing the semiconductor device
View Patent ↗A semiconductor device includes: a semiconductor element; a joined member that is joined to the semiconductor element and includes a nickel film; and a joining layer that is joined to the joined member and contains 2.0 wt % or higher of copper, in which the joining layer includes a solder portion and a Cu 6 Sn 5 portion, base metal of the solder portion contains at least tin as a constituent element and contains elemental copper, and the Cu 6 Sn 5 portion is in contact with the nickel film.
1. A semiconductor device comprising:
a semiconductor element;
a joined member that is joined to the semiconductor element and includes a nickel film; and
a joining layer that is joined to the joined member and contains 2.0 wt % or higher of copper,
wherein
the joining layer includes a solder portion and a Cu 6 Sn 5 portion,
base metal of the solder portion contains at least tin as a constituent element and contains elemental copper, and
the Cu 6 Sn 5 portion is in contact with the nickel film.
2. The semiconductor device according to claim 1 , wherein
a proportion of copper contained in the joining layer is 7.6 wt % or lower.
3. The semiconductor device according to claim 1 , wherein
the base metal is an alloy containing tin and copper as major components.
4. The semiconductor device according to claim 3 , wherein
the base metal is an alloy containing Sn-0.7Cu as a major component.
5. A method of manufacturing the semiconductor device of claim 1 , comprising:
joining a semiconductor element to a joined member, which includes a nickel film, through a solder material whose base metal contains at least tin as a constituent element and contains elemental copper in which a proportion of copper is 2.0 wt % or higher.
6. The method according to claim 5 , wherein
the semiconductor element is joined to the nickel film which is on the joined member through the solder material.
7. The semiconductor device according to claim 1 , wherein
the elemental copper is in the form of particles consisting of copper that are dispersed in the base metal.