IP Library Granted Patent US 9,627,851
Granted Patent B1
US 9,627,851 · App. 14/925,924 · Granted Apr 18, 2017

Discrete wavelength tunable laser

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Quick Facts
Patent No.
US 9,627,851
App. No.
14/925,924
Filed
Oct 28, 2015
Granted
Apr 18, 2017
Kind
B1
Art Unit
2828
USPC
372/20
Abstract

A multisection digital supermode-distributed Bragg reflector (MSDS-DBR) comprising: a plurality P of digital supermode Bragg reflector (DS-DBR) grating sections arranged along a waveguide; wherein each DS-DBR grating section is configured to pass or reflect light over a given spectral region, the given spectral region being different from the spectral regions of the other DS-DBR grating sections; wherein each DS-DBR grating section comprises a plurality M of grating sub-regions, each sub-region corresponding to a spectral sub-band within the spectral region of the DS-DBR grating section, and wherein each grating sub-region includes a positive electrical contact and a negative electrical contact; said grating sub-region being configured to pass or reflect light of its spectral sub-band when an electrical bias is provided between its positive and negative electrical contacts.

Claims (35)

1. A reflector comprising:

one or more digital supermode Bragg reflector (DS-DBR) grating sections arranged along a waveguide; wherein

each DS-DBR grating section is configured to pass or reflect light over a given spectral region, the given spectral region being different from the spectral regions of the other DS-DBR grating sections;

wherein each DS-DBR grating section comprises a plurality of grating sub-regions, each grating sub-region corresponding to a spectral sub-band within the spectral region of the DS-DBR grating section, and

wherein each grating sub-region includes a positive electrical contact and a negative electrical contact; said grating sub-region being configured to pass or reflect light of its spectral sub-band when an electrical bias is provided between its positive and negative electrical contacts.

2. The reflector of claim 1 ,

wherein the one or more DS-DBR grating sections include at least two DS-DBR grating sections, wherein the reflector comprises a common electrode structure shared between two or more of the DS-DBR grating sections;

wherein

the common electrode structure includes a common electrode, the common electrode being connected to an electrical contact on two or more of the DS-DBR grating sections to simultaneously provide an electrical bias to a respective one of the grating sub-regions on each of the two or more DS-DBR grating sections.

3. The reflector of claim 2 , wherein:

the common electrode structure includes a plurality of common electrodes, each of the common electrodes being connected to a respective electrical contact on each of the DS-DBR grating sections to simultaneously provide an electrical bias to a respective one of the grating sub-regions of each of the DS-DBR grating sections.

4. The reflector of claim 2 , wherein the common electrode is a positive electrode.

5. The reflector of claim 4 , wherein a single common negative electrode is arranged to connect with each grating sub-region of all of the DS-DBR grating sections.

6. The reflector of claim 4 , comprising a plurality of common negative electrodes, wherein

each of the common negative electrodes is configured to apply a negative bias to all of the grating sub-regions within a respective one of the one or more DS-DBR grating sections; such that:

coarse selection of the reflector can be achieved by applying a negative bias to the common negative electrode corresponding to the DS-DBR grating section for which selection is desired; and

fine selection of the reflector can be achieved by applying a positive bias to the common positive electrode which provides an electrical contact to the grating sub-region for which selection is desired.

7. A discrete wavelength tunable laser comprising:

a semiconductor optical amplifier (SOA);

a reflector according to claim 1 .

8. The reflector of claim 1 , wherein each of the DS-DBR grating sections is a transmissive DS-DBR.

9. The reflector of claim 1 , wherein each of the DS-DBR grating sections is a reflective DS-DBR.

10. The reflector of claim 1 wherein each DS-DBR grating section comprises 4 grating sub-regions.

11. The reflector of claim 1 , comprising 4 DS-DBR grating sections.

12. The reflector of claim 1 , wherein each grating sub-region includes a p-i-n diode junction, the positive and negative electrical contacts located at p and n doped regions of the p-i-n junction respectively for providing an electrical bias across the p-i-n junction for control of the transmittance or reflectance of each of the spectral sub-bands.

13. The reflector of claim 12 wherein the p-i-n diode junctions are horizontal p-i-n junctions.

14. A discrete wavelength tunable laser comprising:

a semiconductor optical amplifier (SOA);

a reflector according to claim 1 ; and

a coarse spectral filter having a plurality P of spectral passbands;

wherein each of the P spectral passbands of the coarse spectral filter corresponds to the spectral region of one of the DS-DBR grating sections of the reflector.

15. The discrete wavelength tunable laser of claim 14 , wherein the SOA is a reflective semiconductor optical amplifier (RSOA).

16. The discrete wavelength tunable laser of claim 14 , wherein the waveguide is a silicon photonics waveguide.

17. The discrete wavelength tunable laser of claim 14 , wherein the coarse spectral filter is a transmission DS-DBR (TDS-DBR), the TDS-DBR having a plurality of transmission passbands, each of the passbands corresponding to the spectral region of a respective one of the DS-DBR grating sections of the reflector.

18. The reflector of claim 1 , wherein the waveguide is a silicon photonics waveguide.

Assignments (10)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2022
From: HENGTONG ROCKLEY TECHNOLOGY CO., LTD.
To: SUZHOU SURINNO PHOTONICS TECHNOLOGY CO., LTD.
Reel/Frame 060299/0185 →
RELEASE OF SECURITY INTEREST Recorded May 18, 2022
From: SILICON VALLEY BANK
To: ROCKLEY PHOTONICS LIMITED
Reel/Frame 059948/0387 →
RELEASE OF SECURITY INTEREST Recorded May 18, 2022
From: KREOS CAPITAL V (UK) LIMITED
To: ROCKLEY PHOTONICS LIMITED
Reel/Frame 060116/0136 →
WAIVER OF BREACH Recorded Dec 5, 2019
From: SILICON VALLEY BANK; KREOS CAPITAL V (UK) LIMITED
To: ROCKLEY PHOTONICS LIMITED
Reel/Frame 051210/0326 →
RELEASE OF SECURITY INTEREST Recorded Dec 5, 2019
From: SILICON VALLEY BANK; KREOS CAPITAL V (UK) LIMITED
To: ROCKLEY PHOTONICS LIMITED
Reel/Frame 051197/0065 →
LICENSE Recorded Dec 5, 2019
From: HENGTONG ROCKLEY TECHNOLOGY CO., LTD.
To: ROCKLEY PHOTONICS LIMITED
Reel/Frame 051197/0024 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2019
From: ROCKLEY PHOTONICS LIMITED
To: HENGTONG ROCKLEY TECHNOLOGY CO., LTD.
Reel/Frame 051197/0050 →
SECURITY INTEREST Recorded May 26, 2017
From: ROCKLEY PHOTONICS LIMITED
To: KREOS CAPITAL V (UK) LIMITED
Reel/Frame 042517/0968 →
SECURITY INTEREST Recorded Jan 27, 2017
From: ROCKLEY PHOTONICS LIMITED
To: SILICON VALLEY BANK
Reel/Frame 041108/0640 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 19, 2015
From: ZILKIE, AARON
To: ROCKLEY PHOTONICS LIMITED
Reel/Frame 037092/0393 →