IP Library Granted Patent US 9,550,360
Granted Patent B2
US 9,550,360 · App. 14/926,567 · Granted Jan 24, 2017

Method for manufacturing an inkjet print head

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Quick Facts
Patent No.
US 9,550,360
App. No.
14/926,567
Granted
Jan 24, 2017
Kind
B2
Abstract

Provided are a manufacturing method of an inkjet print head, the inkjet print head and a drawing apparatus equipped with the inkjet print head. The manufacturing method includes: forming a separation assisting layer on a substrate; forming heating resistors, thin-film transistors and nozzles for ejecting liquid, on the separation assisting layer; separating the separation assisting layer from the substrate; forming a first heat-conductive layer on the opposite surface of the separation assisting layer from the nozzles; and forming an ink supply port for supplying ink to the nozzles from a first heat-conductive layer side of the inkjet print head.

Claims (15)

1. A manufacturing method of an inkjet print head comprising:

forming a separation assisting layer on a substrate;

forming heating resistors, thin-film transistors and nozzles for ejecting liquid, on the separation assisting layer;

separating the separation assisting layer from the substrate;

forming a first heat-conductive layer on an opposite surface of the separation assisting layer from the nozzles; and

forming an ink supply port for supplying ink to the nozzles from a first heat-conductive layer side of the inkjet print head.

2. The manufacturing method of claim 1 ,

wherein the forming the first heat-conductive layer is conducted after forming an active layer of the thin-film transistors in the forming the heating resistors, the thin-film transistors and the nozzles.

3. The manufacturing method of claim 1 ,

wherein the forming the ink supply port includes

forming a first channel running from the nozzles to the separation assisting layer,

forming a second channel in the first heat-conductive layer, and

connecting the first channel and the second channel together to form the ink supply port.

4. The manufacturing method of claim 1 ,

wherein the forming the heating resistors, the thin-film transistors and the nozzles, includes forming an active layer of the thin-film transistors by preparing a layer of amorphous silicon and irradiating with laser for crystalizing the layer of the amorphous silicon.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2019
From: TIANMA JAPAN, LTD. (FORMERLY NLT TECHNOLOGIES, LTD.)
To: TIANMA MICROELECTRONICS CO., LTD.
Reel/Frame 050582/0869 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 29, 2015
From: MORI, SHIGERU; KANEKO, SETSUO; ASADA, HIDEKI
To: NLT TECHNOLOGIES, LTD.
Reel/Frame 036914/0395 →