Semiconductor device having a low-adhesive bond substrate pair
View Patent ↗A semiconductor device includes a low-adhesion film, a pair of substrates, and a metal electrode. The low-adhesion film has lower adhesion to metal than a semiconductor oxide film. The pair of substrates is provided with the low-adhesion film interposed therebetween. The metal electrode passes through the low-adhesion film and connects the pair of substrates, and includes, between the pair of substrates, a part thinner than parts embedded in the pair of substrates. A portion of the metal electrode embedded in one substrate is provided with a gap interposed between the portion and the low-adhesion film on the other substrate.
1. A semiconductor device comprising:
a low-adhesion film that has lower adhesion to metal than a semiconductor oxide film;
a pair of substrates provided with the low-adhesion film interposed therebetween; and
a metal electrode that passes through the low-adhesion film and connects the pair of substrates, the metal electrode including, between the pair of substrates, a part thinner than parts embedded in the pair of substrates,
wherein a portion of the metal electrode embedded in one of the substrates is provided with a gap interposed between the portion and the low-adhesion film on another substrate.
2. The semiconductor device according to claim 1 , wherein a portion of the metal electrode embedded in the other substrate is provided with a gap interposed between the portion and the low-adhesion film on the one substrate.
3. The semiconductor device according to claim 1 , wherein the metal electrode has a thickness at a part embedded in the one substrate equal to a thickness at a part embedded in the other substrate.
4. The semiconductor device according to claim 1 , wherein the low-adhesion film is a film formed by a semiconductor nitride film, a semiconductor oxide film containing carbon, or a low-k material.
5. The semiconductor device according to claim 1 , wherein the low-adhesion film is a film that has lower adhesion to metal than a silicon oxide to which no impurities are added.
6. The semiconductor device according to claim 1 , wherein the low-adhesion film includes:
a first low-adhesion film that has lower adhesion to metal than a semiconductor oxide film, the first low-adhesion film being provided on a surface of a first substrate of the pair of substrates; and
a second low-adhesion film that has lower adhesion to metal than a semiconductor oxide film, the second low-adhesion film being provided on a surface of a second substrate of the pair of substrates.
7. The semiconductor device according to claim 2 , wherein the portion of the metal electrode embedded in the one substrate is provided with a gap interposed between the portion and the low-adhesion film on the other substrate, the gap being of substantially the same size as a gap between the portion of the metal electrode embedded in the other substrate and the low-adhesion film on the one substrate.
8. The semiconductor device according to claim 1 , further comprising barrier metal provided between the pair of substrates and the metal electrode, and between the low-adhesion film and the metal electrode.
9. The semiconductor device according to claim 1 , wherein the low-adhesion film is provided on a surface of the one of the pair of substrates.
10. The semiconductor device according to claim 1 , wherein the one of the pair of substrates is a substrate in which a logic circuit is provided, and the other of the pair of substrates is a substrate in which an image sensor is provided.