Embedded noble metal electrodes in microfluidics
A technique relates to manufacturing a nanogap. An oxide layer is disposed on top of a substrate. A release layer is disposed in a pattern on top of the oxide layer. A patterned trench is etched into the oxide layer using the pattern of the release layer. A metal layer is disposed on the release layer and in the patterned trench. A polish removes the release layer, thereby removing both the release layer and a portion of the metal layer having been disposed on top of the release layer, such that the metal layer remaining includes a first metal part and a second metal part connected by a metal nanowire. The metal layer remaining is coplanar with the oxide layer. A nanochannel is formed in the oxide layer in a region of the metal nanowire. The nanogap is formed in the metal nanowire separating the first and second metal parts.
1. A structure formed with a nanogap, the structure comprising:
an oxide layer formed on top of a substrate;
a patterned trench formed into the oxide layer according to a pattern of a sacrificial release layer to be removed;
a metal layer formed in the patterned trench of the oxide layer and on a surface of the oxide layer, wherein the metal layer is coplanar with the oxide layer, and wherein the metal layer in the patterned trench comprises a first metal part formed in the oxide layer and on the surface of the oxide layer, a second metal part formed in the oxide layer and on the surface of the oxide layer, and a metal nanowire between the first and second metal parts; and
the nanogap formed in the metal nanowire, such that the first metal part and the second metal part are separated by the nanogap; and
a nanochannel formed in the oxide layer in a region of the nanogap, the nanogap being parallel to the nanochannel and perpendicular to the metal nanowire;
wherein the nanogap, the first metal part, the second metal part, and the nanochannel lie in a same plane;
wherein a width dimension of the first metal part and second metal part is greater than a width dimension of the metal nanowire.
2. The structure of claim 1 , further comprising a cover over at least the nanochannel, the nanogap, and the first and second metal parts.
3. The structure of claim 1 , wherein the metal layer in the patterned trench is free from scratches.
4. The structure of claim 1 , wherein the metal layer is a noble metal.
5. The structure of claim 1 , wherein the metal layer comprises at least one of palladium, platinum, and gold.
6. The structure of claim 1 , wherein the substrate comprises silicon.
7. The structure of claim 1 , wherein the oxide layer is silicon dioxide.
8. The structure of claim 1 , wherein the metal layer is embedded in the oxide layer such that a top metal surface of the metal layer is coplanar with a top oxide surface of the oxide layer.
9. The structure of claim 1 , wherein the nanochannel interfaces with the metal nanowire at the nanogap.