Elastic wave device and method for manufacturing the same
An IDT electrode of an elastic wave device includes a first electrode film made of Al or mainly containing Al, a second electrode film with a density larger than that of the first electrode film, an anti-diffusion film which is located between the first electrode film and the second electrode film and which significantly reduces or prevents interdiffusion between the first electrode film and the second electrode film, and a first Ti film located between the first electrode film and the anti-diffusion film, to diffuse a diffusion material into the first electrode film.
1. An elastic wave device comprising:
a piezoelectric substrate; and
an IDT electrode located on the piezoelectric substrate and including electrode fingers; wherein
the IDT electrode is a multilayer electrode including:
a first electrode film made of Al or an alloy mainly including Al;
a second electrode film with a density larger than that of the first electrode film;
an anti-diffusion film located between the first electrode film and the second electrode film and preventing interdiffusion between the first electrode film and the second electrode film; and
a diffusion film, located between the first electrode film and the anti-diffusion film, that diffuses a diffusion material into the first electrode film.
2. The elastic wave device according to claim 1 , wherein the anti-diffusion film diffuses the diffusion material into the first electrode film, the anti-diffusion film is made of an oxide or a nitride of Ti and a first Ti film, and the diffusion material is made of Ti.
3. The elastic wave device according to claim 2 , wherein the IDT electrode includes an unoxidized or unnitrided second Ti film located between the anti-diffusion film and the second electrode film, and a thickness of the first Ti film is larger than a thickness of the second Ti film.
4. The elastic wave device according to claim 3 , wherein the anti-diffusion film includes a region in which a single-layer Ti film made of Ti only is located on the second electrode film and a surface of the single-layer Ti film is oxidized or nitrided and the second Ti film is an unoxidized or unnitrided region of the single-layer Ti film.
5. The elastic wave device according to claim 1 , wherein the anti-diffusion film is made of an oxide or nitride of Cr and the diffusion film is a first Cr film that diffuses Cr as a diffusion material into the first electrode film.
6. The elastic wave device according to claim 5 , wherein the IDT electrode includes an unoxidized or unnitrided second Cr film located between the anti-diffusion film and the second electrode film, and a thickness of the first Cr film is larger than a thickness of the second Cr film.
7. The elastic wave device according to claim 6 , wherein the anti-diffusion film is a region in which a single-layer Cr film made of Cr only is located on the second electrode film and a surface of the single-layer Cr film is oxidized or nitrided and the second Cr film is an unoxidized or unnitrided region of the single-layer Cr film.
8. The elastic wave device according to claim 1 , wherein the piezoelectric substrate and the IDT electrode define one of a surface acoustic wave filter, a surface acoustic wave resonator, and a boundary wave filter.
9. The elastic wave device according to claim 1 , further comprising extended electrodes located on the piezoelectric substrate.
10. The elastic wave device according to claim 1 , further comprising a support section with a frame shape located on the piezoelectric substrate surrounding the IDT electrode.
11. The elastic wave device according to claim 10 , further comprising an insulating member located above the piezoelectric substrate and in contact with the support section that is located between the insulating member and the piezoelectric substrate.
12. The elastic wave device according to claim 11 , further comprising a protective member located over the insulating member and the piezoelectric substrate.
13. The elastic wave device according to claim 12 , further comprising via conductors extending through the support section, the insulating member and the protective member.
14. The elastic wave device according to claim 2 , wherein a thickness of the first electrode film is larger than a thickness of the first Ti film, the anti-diffusion film, or the second electrode film.
15. The elastic wave device according to claim 2 , wherein a thickness of the second electrode film is larger than a thickness of the first Ti film or the anti-diffusion film.
16. The elastic wave device according to claim 1 , wherein the second electrode film is located closer to the piezoelectric substrate than the first electrode film.
17. The elastic wave device according to claim 1 , further comprising an adhesion film located between the piezoelectric substrate and the second electrode film, or an anti-oxidation film located above the second electrode film.
18. A method for manufacturing the elastic wave device according to claim 4 , comprising the steps of:
directly or indirectly attaching the second electrode film to the piezoelectric substrate;
providing the single-layer Ti film on the second electrode film;
forming the anti-diffusion film and the second Ti film from the single-layer Ti film by oxidizing or nitriding a surface of the single-layer Ti film;
providing the first Ti film on the anti-diffusion film; and
providing the first electrode film on the first Ti film.
19. A method for manufacturing the elastic wave device according to claim 7 , comprising the steps of:
directly or indirectly attaching the second electrode film to the piezoelectric substrate;
providing the single-layer Cr film on the second electrode film;
forming the anti-diffusion film and the second Cr film from the single-layer Cr film by oxidizing or nitriding a surface of the single-layer Cr film;
providing the first Cr film on the anti-diffusion film; and
providing the first electrode film on the first Cr film.