Semiconductor device
A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.
1. A semiconductor device comprising:
a p or p+ doped portion;
an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion;
an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and said at least one doped portion meet; and
at least one additional portion, wherein said at least one additional portion is located such that, when one of said doped portions and said at least one additional portion are biased at substantially the same electrical potential, electrical potential lines leave said semiconductor drift portion homogeneously, and when said one of said doped portions is biased at a first non-zero potential and said at least one additional portion is biased at a second non-zero potential, the second potential being different from the first potential, electrical potential lines leave the semiconductor drift portion inhomogeneously.
2. A device according to claim 1 , wherein said at least one additional portion has a side which lies in a plane defined by a side of one of the doped portions wherein said side of the one of the doped portions faces the other one of the doped portions.
3. A device according to claim 1 , wherein said at least one additional portion is arranged for reducing the variation of the electric field strength in said region when a voltage difference is applied between the doped portions.
4. A device according to claim 1 wherein said at least one additional portion is located such that, when said doped portions and said at least one additional portion are biased, the electrical potential lines leave said semiconductor drift portion homogeneously in said region where the drift portion and said at least doped portion meet.
5. A device according to claim 1 wherein the electrical potential lines are parallel in a region immediately adjacent said semiconductor drift portion.