Light Emitting Diode Structure

1 . A light emitting diode structure, comprising:

a first type semiconductor layer;

an active layer;

a second type semiconductor layer, wherein the active layer is disposed between the first type semiconductor layer and the second type semiconductor layer; and

a reflective stacked layer, comprising:

a first reflective layer disposed at a side of the second type semiconductor layer opposing the active layer; and

a second reflective layer which is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer,

wherein the first reflective layer has a first surface proximate to the second type semiconductor layer, and the second reflective layer has a second surface proximate to the second type semiconductor layer, and a vertical projection area of the second reflective layer on the second type semiconductor layer is greater than a vertical projection area of the first reflective layer on the second type semiconductor layer, and the second reflective layer has a better resistance to migration than the first reflective layer.

2 . The light emitting diode structure of claim 1 , wherein a reflectance of the first reflective layer is greater than a reflectance of the second reflective layer.

3 . The light emitting diode structure of claim 2 , wherein the reflectance of the first reflective layer is in a range substantially from 90% to 100%, and the reflectance of the second reflective layer is substantially greater than 80% but smaller than the reflectance of the first reflective layer.

4 . The light emitting diode structure of claim 1 , wherein the first surface and the second surface form a reflective surface of the reflective stacked layer.

5 . The light emitting diode structure of claim 4 , wherein the first surface substantially occupies 80% to 99% of an area of the reflective surface, and the second surface substantially occupies 1% to 20% of the area of the reflective surface.

6 . The light emitting diode structure of claim 4 , wherein the first surface substantially occupies 90% to 95% of an area of the reflective surface, and the second surface substantially occupies 5% to 10% of the area of the reflective surface.

7 . The light emitting diode structure of claim 4 , wherein the reflective stacked layer comprises a first blocking layer disposed between the first reflective layer and the second reflective layer.

8 . The light emitting diode structure of claim 7 , wherein the reflective stacked layer comprises a second blocking layer disposed at a side of the second reflective layer opposing the first reflective layer.

9 . The light emitting diode structure of claim 8 , further comprising a current blocking layer, wherein the second reflective layer further comprises a recess disposed at a side of the second reflective layer facing the second type semiconductor layer, and the current blocking layer is disposed in the recess and adjoins the second type semiconductor layer.

10 . The light emitting diode structure of claim 1 , wherein a projection of the first reflective layer on the second type semiconductor layer is located in a projection of the second reflective layer on the second type semiconductor layer.

11 . The light emitting diode structure of claim 1 , wherein the first reflective layer is formed from silver, and the second reflective layer is formed from aluminum, rhodium, a silver alloy, or a combination thereof.

12 . The light emitting diode structure of claim 1 , wherein the first reflective layer is formed from silver or a silver alloy, and the second reflective layer is formed from aluminum, rhodium, or a combination thereof.

13 . The light emitting diode structure of claim 1 , further comprising a transparent conductive layer disposed between the second type semiconductor layer and the reflective stacked layer.

14 . The light emitting diode structure of claim 1 , wherein the reflective stacked layer further comprises a transparent conductive layer disposed between the first reflective layer and the second type semiconductor layer, and a surface of the transparent conductive layer facing the second type semiconductor layer and the second surface are coplanar to form a reflective surface of the reflective stacked layer.

15 . The light emitting diode structure of claim 14 , wherein a reflectance of the first reflective layer is greater than a reflectance of the second reflective layer.

16 . The light emitting diode structure of claim 15 , wherein the reflectance of the first reflective layer is in a range substantially from 90% to 100%, and the reflectance of the second reflective layer is substantially greater than 80% but smaller than the reflectance of the first reflective layer.

17 . The light emitting diode structure of claim 15 , wherein the surface of the transparent conductive layer facing the second type semiconductor layer substantially occupies 80% to 99% of an area of the reflective surface, and the second surface substantially occupies 1% to 20% of the area of the reflective surface.

18 . The light emitting diode structure of claim 13 , wherein the reflective stacked layer comprises a first blocking layer disposed between the first reflective layer and the second reflective layer.

19 . The light emitting diode structure of claim 18 , wherein the reflective stacked layer comprises a second blocking layer disposed at a side of the second reflective layer opposing the first reflective layer.

20 . The light emitting diode structure of claim 19 , further comprising a current blocking layer, wherein the second reflective layer further comprises a recess disposed at a side of the second reflective layer facing the second type semiconductor layer, and the current blocking layer is disposed in the recess and adjoins the second type semiconductor layer.