Microstructure enhanced absorption photosensitive devices
Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.
1. A microstructure-enhanced germanium-on-silicon avalanche photodetector for operation with an incident optical source signal at a wavelength range that includes 1550 nanometers, comprising:
a germanium P-layer;
a germanium photon-absorbing I-layer under the germanium P-layer, said germanium photo-absorbing I-layer comprising a substantially continuous layer interrupted by a plurality of intentionally formed holes therein and configured to receive, concurrently at a plural number of the holes, an incident optical source signal that is substantially continuous in cross-section;
a silicon charge P-layer under the germanium I-layer;
a silicon avalanche I-layer under the silicon charge P-layer;
a silicon N-layer under the silicon avalanche I-layer; and
a substrate under the silicon N-region;
said avalanche photodetector being configured to operate at quantum efficiency greater than 80% when receiving said incident optical source signal at a wavelength range that includes 1550 nanometers at bandwidth of at least 5 Gigabits per second, and to provide an electrical photodetector output as a function of the incident source signal when reverse-biased.
2. The microstructure-enhanced germanium-on-silicon avalanche photodetector of claim 1 , further comprising an active electronic circuit integrated into a single chip with said avalanche photodetector by at least one of a CMOS and a BiCMOS process and operatively connected to receive the photodetector electrical output and provide a processed electrical output signal.
3. The microstructure-enhanced germanium-on-silicon avalanche photodetector of claim 1 , further comprising a via in the substrate aligned with the holes in the germanium I-layer to receive said optical source signal and direct it to the holes.
4. The microstructure-enhanced germanium-on-silicon avalanche photodetector of claim 3 , further comprising a reflector over the germanium P-layer configured to reflect back toward the substrate photons that have not been absorbed in a pass from the substrate toward the reflector.
5. The microstructure-enhanced germanium-on-silicon avalanche photodetector of claim 3 , in which the photodetector is also configured to receive an optical source signal from a side opposite the substrate.
6. The microstructure-enhanced germanium-on-silicon avalanche photodetector of claim 1 , in which said holes are distributed in a non-periodic pattern.
7. The microstructure-enhanced germanium-on-silicon avalanche photodetector of claim 1 , in which at least some of the holes differ from each other in diameter.
8. The microstructure-enhanced germanium-on-silicon avalanche photodetector of claim 1 , in which said holes are distributed in a non-periodic pattern and at least some of the holes differ from each other in diameter.
9. The microstructure-enhanced germanium-on-silicon avalanche photodetector of claim 1 , in which a surface of the photodetector on which surface the optical source signal is incident, is textured to reduce reflection.
10. The microstructure-enhanced germanium-on-silicon avalanche photodetector of claim 9 , in which the textured surface is on inner sides of said holes.
11. The microstructure-enhanced germanium-on-silicon avalanche photodetector of claim 1 , in which said holes are funnel-shaped.
12. The microstructure-enhanced germanium-on-silicon avalanche photodetector of claim 11 , in which said funnel-shaped holes have diameters that decrease in a direction toward the substrate.
13. The microstructure-enhanced germanium-on-silicon avalanche photodetector of claim 1 , in which the holes are funnel-shaped over only a portion of their lengths in a direction toward the substrate.
14. A microstructure-enhanced silicon avalanche photodetector for operation with an incident optical source signal at a wavelength range that includes 850 nanometers, comprising:
a first silicon P-layer;
a silicon photon-absorbing I-layer under the first silicon P-layer, said silicon I-layer comprising a substantially continuous layer interrupted by a plurality of intentionally formed holes therein and configured to receive, concurrently at a plural number of the holes, an incident optical source signal that is substantially continuous in cross-section;
a silicon charge P-layer under the silicon I-region;
a silicon avalanche I-layer under the silicon charge P-layer;
a silicon N-layer under the silicon avalanche I-layer; and
a substrate under the silicon N-layer;
said avalanche photodetector being configured to operate at quantum efficiency of at least 80% when receiving said incident optical source signal at a wavelength range that includes 850 nanometers at bandwidth of at least 5 Gigabits per second, and to provide an electrical photodetector output as a function of the incident source signal when reverse-biased.
15. The microstructure-enhanced silicon avalanche photodetector of claim 14 , further comprising an active electronic circuit integrated into a single chip with said avalanche photodetector by at least one of a CMOS and a BiCMOS process and operatively connected to receive the photodetector electrical output and provide a processed electrical output signal.
16. The microstructure-enhanced silicon avalanche photodetector of claim 14 , further comprising a via in the substrate aligned with the holes in the silicon photo-absorbing I-layer to receive said optical source signal and direct it to the holes.
17. The microstructure-enhanced silicon avalanche photodetector of claim 16 , further comprising a reflector over the first silicon P-layer configured to reflect back toward the substrate photons that have not been absorbed in a pass from the substrate toward the reflector.
18. The microstructure-enhanced avalanche photodetector of claim 14 , in which the photodetector is also configured to receive an optical source signal from a side opposite the substrate.
19. The microstructure-enhanced silicon avalanche photodetector of claim 14 , in which said holes are distributed in a non-periodic pattern.
20. The microstructure-enhanced silicon avalanche photodetector of claim 14 , in which at least some of the holes differ from each other in diameter.
21. The microstructure-enhanced avalanche photodetector of claim 14 , in which said holes are distributed in a non-periodic pattern and at least some of the holes differ from each other in diameter.
22. The microstructure-enhanced silicon avalanche photodetector of claim 14 , in which a surface of the photodetector on which surface the optical source signal is incident, is textured to reduce reflection.
23. The microstructure-enhanced silicon avalanche photodetector of claim 22 , in which the textured surface is on inner sides of said holes.
24. The microstructure-enhanced silicon avalanche photodetector of claim 14 , in which said holes are funnel-shaped.
25. The microstructure-enhanced silicon avalanche photodetector of claim 24 , in which said funnel-shaped holes have diameters that decrease in a direction toward the substrate.
26. The microstructure-enhanced silicon avalanche photodetector of claim 14 , in which the holes are funnel-shaped over only a portion of their lengths in a direction toward the substrate.
27. A microstructure-enhanced germanium-on-silicon photodetector for operation with an incident optical source signal at a wavelength range that includes 1550 nanometers, comprising:
a germanium P-layer;
a germanium photon-absorbing I-layer under the germanium P-layer, said germanium I-layer comprising a substantially continuous layer interrupted by a plurality of intentionally formed holes therein and configured to receive, concurrently at a plural number of the holes, an incident optical source signal that is substantially continuous in cross-section;
a silicon N-layer under the germanium I-layer; and
a substrate under the silicon N-layer;
said photodetector being configured to absorb more than 50% of said incident optical source signal that is substantially continuous in cross-section at a wavelength range that includes 1550 nanometers at bandwidth of at least 10 Gigabits per second, and to provide an electrical photodetector output as a function of the incident source signal when reverse-biased.
28. The microstructure-enhanced germanium-on-silicon photodetector of claim 27 , in which said holes are distributed in a non-periodic pattern.
29. The microstructure-enhanced germanium-on-silicon photodetector of claim 27 , in which a surface of the photodetector, on which surface the optical source signal is incident, is textured to reduce reflection.
30. The microstructure-enhanced germanium-on-silicon photodetector of claim 27 , in which said holes are funnel-shaped.