IP Library Granted Patent US 9,629,849
Granted Patent B2
US 9,629,849 · App. 14/945,147 · Granted Apr 25, 2017

Salts and solid forms of (S)-3-(4-((4-(morpholinomethyl)benzyl)oxy)-1-oxoisoindolin-2-yl)piperidine-2,6-dione and compositions comprising and methods of using the same

Inventors: Benjamin M. Cohen (Cranford, NJ); John F. Traverse (Roselle Park, NJ); Jean Xu (Warren, NJ); Ying Li (Millburn, NJ)
Assignee: Celgene Corporation
A61K31/5377C07D401/04A61K31/4035A61K31/4412
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Quick Facts
Patent No.
US 9,629,849
App. No.
14/945,147
Granted
Apr 25, 2017
Kind
B2
Abstract

Salts and solid forms of 3-(4-((4-(morpholinomethyl)benzyl)oxy)-1-oxoisoindolin-2-yl)piperidine-2,6-dione, or a stereoisomer thereof, are disclosed. Compositions comprising and methods of using the salts and solid forms are also disclosed.

Claims (54)

1. A method of treating cancer, an immune-related disease or disorder, an inflammatory disease or disorder, or a symptom thereof in a subject, comprising administering to the subject a therapeutically effective amount of a solid form comprising a HCl salt of Compound (I-S):

or a salt, hydrate, anhydrate, or solvate of the HCl salt, wherein the solid form is crystalline, wherein the solid form

is Form A crystal form characterized by an XRPD pattern comprising peaks at approximately 15.09, 15.94, and 22.30 degrees 2θ;

is Form B crystal form characterized by an XRPD pattern comprising peaks at approximately 7.11, 14.20, and 20.71 degrees 2θ;

is Form C crystal form characterized by an XRPD pattern comprising peaks at approximately 6.55, 13.14, and 13.37 degrees 2θ;

is Form D crystal form characterized by an XRPD pattern comprising peaks at approximately 13.52, 14.16, and 25.00 degrees 2θ;

is Form E crystal form characterized by an XRPD pattern comprising peaks at approximately 9.82, 17.06, and 17.73 degrees 2θ;

is Form F crystal form characterized by an XRPD pattern comprising peaks at approximately 13.71, 14.22, and 20.87 degrees 2θ;

is Form G crystal form characterized by an XRPD pattern comprising peaks at approximately 6.85, 20.20, and 20.60 degrees 2θ;

is Form H crystal form characterized by an XRPD pattern comprising peaks at approximately 6.83, 20.19, and 20.58 degrees 2θ;

is Form I crystal form characterized by an XRPD pattern comprising peaks at approximately 13.95, 23.39, and 24.10 degrees 2θ;

is Form J crystal form characterized by an XRPD pattern comprising peaks at approximately 4.86, 13.48, and 20.06 degrees 2θ; or

is Form K crystal form characterized by an XRPD pattern comprising peaks at approximately 7.09, 14.03, and 14.22 degrees 2θ;

wherein the cancer, immune-related disease or disorder, or inflammatory disease or disorder is lupus, scleroderma, Sjögren syndrome, ANCA-induced vasculitis, anti-phospholipid syndrome, myasthenia gravis, systemic lupus erythematosus (SLE), cutaneous lupus erythematosus (CLE), discoid lupus erythematosus (DLE), drug-induced lupus, or multiple myeloma.

2. The method of claim 1 , wherein the solid form is Form A crystal form characterized by an XRPD pattern comprising peaks at approximately 15.09, 15.94, and 22.30 degrees 2θ.

3. The method of claim 2 , wherein the solid form is Form A crystal form characterized by an XRPD pattern further comprises peaks at approximately 17.65, 22.47, and 26.77 degrees 2θ.

4. The method of claim 2 , wherein the solid form is Form A crystal form characterized by an XRPD pattern which matches the XRPD pattern presented in FIG. 36 .

5. The method of claim 2 , wherein the solid form exhibits a thermal event, as characterized by DSC, with a peak temperature of about 261° C. and an onset temperature of about 256° C.

6. The method of claim 2 , wherein the solid form exhibits a weight loss of about 0.16% of the total sample weight upon heating from about 25 to about 120° C.

7. The method of claim 1 , wherein the solid form is Form B crystal form characterized by an XRPD pattern comprising peaks at approximately 7.11, 14.20, and 20.71 degrees 2θ.

8. The method of claim 7 , wherein the solid form is Form B crystal form characterized by an XRPD pattern further comprises peaks at approximately 9.93 and 21.36 degrees 2θ.

9. The method of claim 7 , wherein the solid form is Form B crystal form characterized by an XRPD pattern which matches the XRPD pattern presented in FIG. 44 .

10. The method of claim 1 , wherein the solid form is Form C crystal form characterized by an XRPD pattern comprising peaks at approximately 6.55, 13.14, and 13.37 degrees 2θ.

11. The method of claim 10 , wherein the solid form is Form C crystal form characterized by an XRPD pattern further comprises peaks at approximately 9.09, 19.62, and 19.80 degrees 2θ.

12. The method of claim 10 , wherein the solid form is Form C crystal form characterized by an XRPD pattern which matches the XRPD pattern presented in FIG. 50 .

13. The method of claim 1 , wherein the solid form is Form D crystal form characterized by an XRPD pattern comprising peaks at approximately 13.52, 14.16, and 25.00 degrees 2θ.

14. The method of claim 13 , wherein the solid form is Form D crystal form characterized by an XRPD pattern further comprises peaks at approximately 6.82, 8.07, and 15.71 degrees 2θ.

15. The method of claim 13 , wherein the solid form is Form D crystal form characterized by an XRPD pattern which matches the XRPD pattern presented in FIG. 57 .

16. The method of claim 1 , wherein the solid form is Form E crystal form characterized by an XRPD pattern comprising peaks at approximately 9.82, 17.06, and 17.73 degrees 2θ.

17. The method of claim 16 , wherein the solid form is Form E crystal form characterized by an XRPD pattern further comprises peaks at approximately 16.05, 25.71, and 26.15 degrees 2θ.

18. The method of claim 16 , wherein the solid form is Form E crystal form characterized by an XRPD pattern which matches the XRPD pattern presented in FIG. 64 .

19. The method of claim 1 , wherein the solid form is Form F crystal form characterized by an XRPD pattern comprising peaks at approximately 13.71, 14.22, and 20.87 degrees 2θ.

20. The method of claim 19 , wherein the solid form is Form F crystal form characterized by an XRPD pattern further comprises peaks at approximately 7.10, 16.35, and 28.36 degrees 2θ.

21. The method of claim 19 , wherein the solid form is Form F crystal form characterized by an XRPD pattern which matches the XRPD pattern presented in FIG. 73 .

22. The method of claim 1 , wherein the solid form is Form G crystal form characterized by an XRPD pattern comprising peaks at approximately 6.85, 20.20, and 20.60 degrees 2θ.

23. The method of claim 22 , wherein the solid form is Form G crystal form characterized by an XRPD pattern further comprises peaks at approximately 9.56, 13.69, 19.05, and 23.57 degrees 2θ.

24. The method of claim 22 , wherein the solid form is Form G crystal form characterized by an XRPD pattern which matches the XRPD pattern presented in FIG. 82 .

25. The method of claim 1 , wherein the solid form is Form H crystal form characterized by an XRPD pattern comprising peaks at approximately 6.83, 20.19, and 20.58 degrees 2θ.

26. The method of claim 25 , wherein the solid form is Form H crystal form characterized by an XRPD pattern further comprises peaks at approximately 9.47 and 13.63 degrees 2θ.

27. The method of claim 25 , wherein the solid form is Form H crystal form characterized by an XRPD pattern which matches the XRPD pattern presented in FIG. 86 .

28. The method of claim 1 , wherein the solid form is Form I crystal form characterized by an XRPD pattern comprising peaks at approximately 13.95, 23.39, and 24.10 degrees 2θ.

29. The method of claim 28 , wherein the solid form is Form I crystal form characterized by an XRPD pattern further comprises peaks at approximately 13.51 and 24.30 degrees 2θ.

30. The method of claim 28 , wherein the solid form is Form I crystal form characterized by an XRPD pattern which matches the XRPD pattern presented in FIG. 90 .

31. The method of claim 1 , wherein the solid form is Form J crystal form characterized by an XRPD pattern comprising peaks at approximately 4.86, 13.48, and 20.06 degrees 2θ.

32. The method of claim 31 , wherein the solid form is Form J crystal form characterized by an XRPD pattern further comprises peaks at approximately 20.39, 22.15, and 23.45 degrees 2θ.

33. The method of claim 31 , wherein the solid form is Form J crystal form characterized by an XRPD pattern which matches the XRPD pattern presented in FIG. 92 .

34. The method of claim 1 , wherein the solid form is Form K crystal form characterized by an XRPD pattern comprising peaks at approximately 7.09, 14.03, and 14.22 degrees 2θ.

35. The method of claim 34 , wherein the solid form is Form K crystal form characterized by an XRPD pattern further comprises peaks at approximately 9.35 and 21.60 degrees 2θ.

36. The method of claim 34 , wherein the solid form is Form K crystal form characterized by an XRPD pattern which matches the XRPD pattern presented in FIG. 95 .

37. The method of claim 1 , wherein the immune-related or inflammatory disease or disorder is lupus, scleroderma, Sjögren syndrome, ANCA-induced vasculitis, anti-phospholipid syndrome, or myasthenia gravis.

38. The method of claim 1 , wherein the immune-related or inflammatory disease or disorder is scleroderma.

39. The method of claim 1 , wherein the immune-related or inflammatory disease or disorder is systemic lupus erythematosus (SLE), cutaneous lupus erythematosus (CLE), discoid lupus erythematosus (DLE), or drug-induced lupus.

40. The method of claim 39 , wherein the immune-related or inflammatory disease or disorder is SLE.

41. The method of claim 1 , wherein the cancer is multiple myeloma.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 3, 2016
From: COHEN, BENJAMIN M.; TRAVERSE, JOHN F.; XU, JEAN; LI, YING
To: CELGENE CORPORATION
Reel/Frame 037659/0559 →
Continuity (3)
Continuation 13962745 · Aug 8, 2013
Provisional Application 61681484 · Aug 9, 2012
Related Publication 20160136174A1 · May 19, 2016