Method for manufacturing electronic device comprising a resin substrate and an electronic component
View Patent ↗An electronic component manufacturing method according to an aspect of the present disclosure includes providing a support substrate, forming a release layer including a metal or a metal oxide on a first surface of the support substrate, forming a resin substrate on the release layer, forming a functional element on the resin substrate, and separating the resin substrate from the support substrate by applying laser light to the support substrate through a second surface of the support substrate. The laser light that reaches an interface between the resin substrate and the release layer after being transmitted through the support substrate and the release layer has an energy density lower than a threshold for the resin substrate to be processed by the laser light.
1. A method for manufacturing an electronic device comprising a resin substrate and an electronic component, the method including:
providing a support substrate having a first surface and a second surface opposite to the first surface;
forming a release layer on the first surface of the support substrate, the release layer including a metal or a metal oxide;
forming the resin substrate on the release layer;
forming the electronic component on the resin substrate; and
separating the resin substrate from the support substrate by applying laser light to the support substrate through the second surface, wherein
the laser light does not reach an first interface between the resin substrate and the release layer, or
the laser light is transmitted through the support substrate and the release layer to reach the first interface, and at the first interface, the laser light has an energy density lower than a threshold for the resin substrate to be processed by the laser light.
2. The method according to claim 1 , wherein the electronic component is a light emitting device that emits light.
3. The method according to claim 1 , wherein the electronic component is a thin film transistor or a sensor.
4. The method according to claim 1 , wherein
a transmittance of the release layer at a wavelength of the laser light is 30% or less.
5. The method according to claim 1 , wherein
the release layer includes the metal, and
the metal includes at least one selected from the group consisting of zinc, indium, molybdenum and tungsten.
6. The method according to claim 1 , wherein
the release layer includes the metal oxide, and
the metal oxide includes at least one selected from the group consisting of zinc oxide, indium zinc oxide, indium tin oxide, aluminum oxide, molybdenum oxide and tungsten oxide.
7. The method according to claim 6 , wherein
the metal oxide is an oxygen-deficient metal oxide.
8. The method according to claim 1 , wherein
a wavelength of the laser light is not less than 250 nm and not more than 11000 nm.
9. The method according to claim 1 , wherein
the resin substrate contains fluorine element.
10. The method according to claim 9 , wherein
a substance having a metal-fluorine bond is formed at the first interface between the resin substrate and the release layer by the application of the laser light to the support substrate through the second surface of the support substrate.
11. The method according to claim 1 , wherein
the resin substrate comprises a transparent resin.
12. The method according to claim 1 , wherein
a thickness of the release layer is not more than 1000 nm.
13. The method according to claim 1 , wherein
a thickness of the resin substrate is not less than 0.1 μm and not more than 100 μm.
14. A method for manufacturing an electronic device comprising a resin substrate and an electronic component, the method including:
providing a support substrate having a first surface and a second surface opposite to the first surface;
forming a release layer on a first surface of the support substrate, the release layer including a metal oxide including at least one selected from the group consisting of zinc oxide, indium zinc oxide, indium tin oxide, aluminum oxide, molybdenum oxide and tungsten oxide;
forming the resin substrate on the release layer, the resin substrate containing fluorine element;
forming the electronic component on the resin substrate; and
separating the resin substrate from the support substrate by applying laser light to the support substrate through the second surface of the support substrate.
15. The method according to claim 14 , wherein the electronic component is a light emitting device that emits light.
16. The method according to claim 14 , wherein the electronic component is a thin film transistor or a sensor.
17. A method for manufacturing a flexible substrate comprising a resin substrate, the method including:
providing a support substrate having a first surface and a second surface opposite to the first surface;
forming a release layer including a metal or a metal oxide on the first surface of the support substrate;
forming the resin substrate on the release layer; and
separating the resin substrate from the support substrate by applying laser light to the support substrate through the second surface of the support substrate, wherein
the laser light does not reach an first interface between the resin substrate and the release layer, or
the laser light is transmitted through the support substrate and the release layer to reach the first interface, and at the first interface, the laser light has an energy density lower than a threshold for the resin substrate to be processed by the laser light.