Light emitting device
View Patent ↗This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.
1. A light-emitting device, comprising:
a light-emitting stack, having a side wall and a top surface comprising a first region and a second region, and comprising an active layer which is configured to emit light;
a light-absorbing layer having a top portion covering the first region of the top surface of the light-emitting stack, wherein the light-absorbing layer is configured to absorb more than 50% of the light toward the light-absorbing layer; and
a reflective layer below the light-emitting stack and having an area corresponding to that of the second region of the top surface of the light-emitting stack.
2. The light-emitting device of claim 1 , wherein the light-absorbing layer further has a side portion surrounding the side wall.
3. The light-emitting device of claim 1 , further comprising an insulation layer formed between the side wall of the light-emitting stack and the light-absorbing layer.
4. The light-emitting device of claim 1 , further comprising a first electrode formed on the light-emitting stack, wherein the first electrode comprises an inner segment on the second region of the top surface of the light-emitting stack.
5. The light-emitting device of claim 4 , wherein the first electrode further comprises an outer segment, and a plurality of extending segment electrically connected the inner segment with the outer segment.
6. The light-emitting device of claim 5 , wherein the outer segment is formed on the first region.
7. The light-emitting device of claim 5 , wherein the light-absorbing layer covers the outer segment.
8. The light-emitting device of claim 4 , further comprising an ohmic contact layer formed between the inner segment and the light-emitting stack.
9. The light-emitting device of claim 5 , wherein the inner segment and the outer segment comprise a circle, rectangle, quadrangle or polygon in shape.
10. The light-emitting device of claim 1 , further comprising a substrate, and the reflective layer is between the substrate and the light-emitting stack.
11. The light-emitting device of claim 10 , further comprising a bonding layer formed between the reflective layer and the substrate.
12. The light-emitting device of claim 10 , further comprising a second electrode formed on the substrate.
13. The light-emitting device of claim 1 , wherein the light-absorbing layer comprises metal material and has a thickness larger than 300 Å.
14. The light-emitting device of claim 1 , wherein the light-absorbing layer comprises Ti, Cr, Ni or combinations thereof.
15. The light-emitting device of claim 1 , wherein the light-absorbing layer comprises a plurality of sublayers.
16. The light-emitting device of claim 1 , wherein the light-emitting stack further comprises a trench disposed to divide the light-emitting stack into a first semiconductor structure and a second semiconductor structure.
17. The light-emitting device of claim 16 , further comprising an electrode area substantially surrounding the light-emitting stack, and the electrode area comprises a plurality of external electrode structures.
18. The light-emitting device of claim 17 , further comprising a first extension electrode disposed on the first semiconductor structure and a second extension electrode disposed on the second semiconductor structure, wherein the plurality of the external structures comprises a first bonding pad electrically connecting with the first extension electrode, and a second bonding pad electrically connecting with the second extension electrode.
19. A light-emitting device, comprising:
a light-emitting stack, having a side wall and a top surface comprising a first region and a second region, and comprising an active layer which is configured to emit light;
a light-absorbing layer having a top portion covering the first region of the top surface of the light-emitting stack, wherein the light-absorbing layer comprises metal material; and
a reflective layer below the light-emitting stack and having an area corresponding to that of the second region of the top surface of the light-emitting stack.
20. A light-emitting device, comprising:
a light-emitting stack, having a side wall and a top surface comprising a first region and a second region, and comprising an active layer which is configured to emit light;
a light-absorbing layer having a top portion covering the first region of the top surface of the light-emitting stack; and
a reflective layer below the light-emitting stack and having an area corresponding to that of the second region of the top surface of the light-emitting stack;
wherein an area of the second region is between 10% and 90% of an area of the top surface of the light-emitting stack.