IP Library Granted Patent US 9,559,496
Granted Patent B2
US 9,559,496 · App. 14/951,149 · Granted Jan 31, 2017

Laser light source

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Quick Facts
Patent No.
US 9,559,496
App. No.
14/951,149
Granted
Jan 31, 2017
Kind
B2
Abstract

A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure comprises at least one first filter element disposed downstream of the semiconductor layer sequence in the emission direction and it has at least one layer comprising a material that is non-transparent to electromagnetic radiation.

Claims (26)

1. A laser light source, comprising

a semiconductor layer sequence having an active region and a radiation coupling out area having a first partial region and a second partial region different than the first partial region, and

a filter structure,

wherein

the active region generates, during operation, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range,

the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction,

the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region,

the second wavelength range comprises the first wavelength range,

the filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction,

the filter structure comprises at least one first filter element disposed downstream of the semiconductor layer sequence in the emission direction,

the at least one first filter element has at least one layer comprising a material that is non-transparent to electromagnetic radiation, and

the non-transparent material is at least partly arranged on the second partial region.

2. The laser light source as claimed in claim 1 , wherein

the semiconductor layer sequence comprises a transparent substrate and

a surface of the transparent substrate forms a part of the second partial region.

3. The laser light source as claimed in claim 2 , wherein the first filter element is applied on the surface of the substrate which forms a part of the second partial region.

4. The laser light source as claimed in claim 3 , wherein the first filter element is applied exclusively on the surface of the substrate.

5. The laser light source as claimed in claim 1 , wherein the first partial region is free of the first filter element.

6. The laser light source as claimed in claim 1 , wherein the first filter element is non-transparent to the incoherent second electromagnetic radiation.

7. The laser light source as claimed in claim 1 , wherein the non-transparent material is electrically conductive.

8. The laser light source as claimed in claim 1 , wherein the non-transparent material comprises at least one of the materials silicon, gallium, germanium, aluminum, chromium and titanium.

9. The laser light source as claimed in claim 1 , wherein the entire second partial region, via which the incoherent second electromagnetic radiation is emitted, is covered with the non-transparent material.

10. The laser light source as claimed in claim 1 , wherein

the at least one layer is embodied as a pinhole diaphragm having an opening, and

the opening is arranged above the first partial region.

11. The laser light source as claimed in claim 1 , wherein the first filter element has a transparent metal oxide or transparent metal nitride or transparent metal oxynitride layer above the first partial region.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051467/0906 →