Light-emitting device
View Patent ↗A light-emitting device of an embodiment of the present disclosure comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer, wherein the first type semiconductor layer comprises a non-planar roughened surface; a bonding layer formed between the substrate and the semiconductor stack; and multiple recesses each comprising a bottom surface lower than the non-planar roughened surface; and multiple buried electrodes physically buried in the first type semiconductor layer, wherein the multiple buried electrodes are formed in the multiple recesses respectively, and one of the multiple buried electrodes comprises an upper surface higher than the non-planar roughened surface of the first type semiconductor layer.
1. A light-emitting device, comprising:
a substrate;
a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer, wherein the first type semiconductor layer comprises a non-planar roughened surface;
a bonding layer formed between the substrate and the semiconductor stack; and
multiple recesses each comprising a bottom surface lower than the non-planar roughened surface; and
multiple buried electrodes physically buried in the first type semiconductor layer, wherein the multiple buried electrodes are formed in the multiple recesses respectively, and one of the multiple buried electrodes comprises an upper surface higher than the non-planar roughened surface of the first type semiconductor layer.
2. The light-emitting device according to claim 1 , wherein one of the multiple buried electrodes comprises an embedded portion under the non-planar roughened surface of the first type semiconductor layer and an exposed portion above the non-planar roughened surface of the first type semiconductor layer.
3. The light-emitting device according to claim 2 , wherein the size of the embedded portion is larger than that of the exposed portion.
4. The light-emitting device according to claim 2 , wherein the embedded portion is electrically connected to the semiconductor stack.
5. The light-emitting device according to claim 1 , wherein an average roughness of the non-planar roughened surface is greater than 0.05 μm.
6. The light-emitting device according to claim 1 , wherein one of the multiple buried electrodes comprises metal or metal alloy.
7. The light-emitting device according to claim 1 , wherein the bottom surface is planar.
8. The light-emitting device according to claim 1 , wherein a thickness of one of the multiple buried electrode is in a range of about 2˜6 μm.
9. The light-emitting device according to claim 1 , wherein the material of the semiconductor stack comprises InGaN, AlGaAs, or AlGaInP.
10. A light-emitting device, comprising:
a substrate;
a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer wherein the first type semiconductor layer comprises a top surface;
a bonding layer formed between the substrate and the semiconductor stack;
multiple recesses recessed from the top surface toward the active layer; and
multiple buried electrodes in the multiple recesses respectively, wherein an upper surface of one of the multiple buried electrodes is higher than the top surface of the first type semiconductor layer.
11. The light-emitting device according to claim 10 , wherein one of the multiple recesses comprises a bottom surface lower than the top surface of the first type semiconductor layer, and the bottom surface is planar.
12. The light-emitting device according to claim 10 , wherein one of the multiple buried electrodes comprises an embedded portion fully embedded in one of the multiple recesses and an exposed portion protruded out of the top surface of the first type semiconductor layer.
13. The light-emitting device according to claim 12 , wherein the size of the embedded portion is larger than that of the exposed portion.
14. The light-emitting device according to claim 12 , wherein the embedded portion is electrically connected to the semiconductor stack.
15. The light-emitting device according to claim 10 , wherein the top surface of the first type semiconductor layer is a roughened surface.
16. The light-emitting device according to claim 15 , wherein an average roughness of the roughened surface is greater than 0.05 μm.
17. The light-emitting device according to claim 10 , wherein one of the multiple buried electrodes comprises metal or metal alloy.
18. The light-emitting device according to claim 10 , wherein the thickness of one of the multiple buried electrode is in a range of about 2˜6 μm.
19. The light-emitting device according to claim 10 , wherein the material of the semiconductor stack comprises InGaN, AlGaAs, or AlGaInP.