Foil-based metallization of solar cells
View Patent ↗Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
1. A solar cell, comprising:
a substrate;
a plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate; and
a conductive contact structure disposed above the plurality of alternating N-type and P-type semiconductor regions, the conductive contact structure comprising:
a plurality of metal seed material regions providing a metal seed material region disposed on each of the plurality of alternating N-type and P-type semiconductor regions; and
a metal foil disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the plurality of alternating N-type and P-type semiconductor regions.
2. The solar cell of claim 1 , wherein all exposed surfaces of the metal foil are anodized.
3. The solar cell of claim 1 , wherein the metal foil is an aluminum metal foil, and wherein the anodized portions are aluminum oxide portions.
4. The solar cell of claim 1 , wherein the metal foil is spot welded to the plurality of metal seed material regions.
5. The solar cell of claim 1 , wherein the plurality of metal seed material regions is a plurality of aluminum regions.
6. The solar cell of claim 5 , wherein each of the plurality of metal seed material regions has a thickness approximately in the range of 0.3 to 20 microns and comprises aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 0-2%.
7. The solar cell of claim 1 , wherein the metal foil has a thickness approximately in the range of 5-100 microns, and the anodized portions have a thickness approximately in the range of 1-20 microns.
8. The solar cell of claim 1 , wherein the plurality of alternating N-type and P-type semiconductor regions comprises a polycrystalline silicon layer formed above the substrate.
9. The solar cell of claim 8 , further comprising:
a trench disposed between each of the plurality of alternating N-type and P-type semiconductor regions, the trenches extending partially into the substrate.
10. The solar cell of claim 1 , wherein the substrate is a monocrystalline silicon substrate, and wherein the plurality of alternating N-type and P-type semiconductor regions comprises alternating N-type and P-type semiconductor regions disposed in the monocrystalline silicon substrate.
11. A solar cell, comprising:
a substrate;
a plurality of semiconductor regions disposed in or above the substrate; and
a conductive contact structure disposed above the plurality of semiconductor regions, the conductive contact structure comprising a metal foil disposed above the plurality of semiconductor regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the plurality of semiconductor regions.
12. The solar cell of claim 11 , wherein all exposed surfaces of the metal foil are anodized.
13. The solar cell of claim 11 , wherein the metal foil is an aluminum metal foil, and wherein the anodized portions are aluminum oxide portions.
14. The solar cell of claim 11 , wherein the metal foil has a thickness approximately in the range of 5-100 microns, and the anodized portions have a thickness approximately in the range of 1-20 microns.
15. The solar cell of claim 11 , wherein the plurality of semiconductor regions comprises a polycrystalline silicon layer formed above the substrate.
16. The solar cell of claim 15 , further comprising:
a trench disposed between each of the plurality of alternating N-type and P-type semiconductor regions, the trenches extending partially into the substrate.
17. The solar cell of claim 11 , wherein the substrate is a monocrystalline silicon substrate, and wherein the plurality of semiconductor regions comprises semiconductor regions disposed in the monocrystalline silicon substrate.
18. A solar cell, comprising:
a substrate;
a plurality of semiconductor regions disposed in or above the substrate; and
a conductive contact structure disposed above the plurality of semiconductor regions, the conductive contact structure comprising:
a plurality of metal seed material regions providing a metal seed material region disposed on each of the plurality of semiconductor regions; and
a metal foil disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the plurality of semiconductor regions.
19. The solar cell of claim 18 , wherein the metal foil is spot welded to the plurality of metal seed material regions.
20. The solar cell of claim 18 , wherein the plurality of metal seed material regions is a plurality of aluminum regions.