IP Library Granted Patent US 9,553,127
Granted Patent B2
US 9,553,127 · App. 14/954,708 · Granted Jan 24, 2017

LED array

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Quick Facts
Patent No.
US 9,553,127
App. No.
14/954,708
Granted
Jan 24, 2017
Kind
B2
Abstract

A light-emitting diode structure comprises a first epitaxial unit; a second epitaxial unit separated from the first epitaxial unit; a crossover metal layer comprising a first protruding portion entering the first epitaxial unit; a conductive layer separated from the crossover metal layer and comprising a second protruding portion entering the second epitaxial unit; a conductive connecting layer surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.

Claims (16)

1. A light-emitting diode structure comprising:

a first epitaxial unit;

a second epitaxial unit separated from the first epitaxial unit;

a crossover metal layer comprising a first protruding portion entering the first epitaxial unit;

a conductive layer separated from the crossover metal layer and comprising a second protruding portion entering the second epitaxial unit;

a conductive connecting layer surrounding the first protruding portion; and

an electrode arranged on the conductive connecting layer.

2. The light-emitting diode structure of claim 1 , wherein the conductive connecting layer has a portion not covered by the first epitaxial unit.

3. The light-emitting diode structure of claim 1 , further comprising an isolation layer formed between the crossover metal layer and the conductive layer.

4. The light-emitting diode structure of claim 1 , wherein the conductive layer is wider than the crossover metal layer.

5. The light-emitting diode structure of claim 1 , wherein the first protruding portion has an elevation substantially equal to that of the second protruding portion.

6. The light-emitting diode structure of claim 1 , wherein the conductive layer comprises a portion arranged under the crossover metal layer.

7. The light-emitting diode structure of claim 1 , wherein a width of the conductive layer is substantially equal to that of the light-emitting diode structure.

8. The light-emitting diode structure of claim 1 , further comprising a first isolation layer arranged between the conductive connecting layer and the first protruding portion.

9. The light-emitting diode structure of claim 1 , further comprising a roughened surface on top surfaces of the first epitaxial unit and the second epitaxial unit.

10. The light-emitting diode structure of claim 1 , further comprising a permanent substrate under the first epitaxial unit, and a bonding layer disposed between the permanent substrate and the first epitaxial unit.

Assignments (2)
CHANGE OF NAME Recorded Feb 26, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075152/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2016
From: JOU, LI-PING; YANG, YU-CHEN; YEH, JUI-HUNG
To: EPISTAR CORPORATION
Reel/Frame 037686/0541 →