Memory device having electrically floating body transistor
A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell selected from at least first and second states. A first region of the memory cell is in electrical contact with the floating body region. A second region of the memory cell is spaced apart from the first region and is also in electrical contact with the floating body region. A gate is positioned between the first and second regions. A back-bias region is configured to generate impact ionization when the memory cell is in one of the first and second states, and the back-bias region is configured so as not to generate impact ionization when the memory cell is in the other of the first and second states.
1. A semiconductor memory cell comprising:
a floating body region configured to be charged to a level indicative of a state of the memory cell selected from at least first and second states;
a first region in electrical contact with said floating body region; and
a back-bias region configured to maintain a charge in said floating body region;
wherein said first region, said floating body region, and said back-bias region form a bipolar transistor where the product of forward emitter gain and impact ionization efficiency of said bipolar transistor approaches unity, and
wherein said back bias region has a lower band gap than said floating body region.
2. The semiconductor memory cell of claim 1 , wherein said back-bias region is configured to generate impact ionization when the memory cell is in one of said first and second states, and wherein said back-bias region is configured so as not to generate impact ionization when the memory cell is in the other of said first and second states.
3. The semiconductor memory cell of claim 1 , further comprising a second region in electrical contact with said floating body region and spaced apart from said first region.
4. The semiconductor memory cell of claim 1 , further comprising a gate region positioned above said floating body region.
5. The semiconductor memory cell of claim 1 , further comprising a substrate region, wherein said back-bias region is positioned between said substrate region and said floating body region.
6. The semiconductor memory cell of claim 1 wherein said first and second states are stable states.
7. The semiconductor memory cell of claim 1 , wherein said floating body region comprises first and second subregions, wherein said first subregion has a first doping concentration level and said second region has a second doping concentration level, and wherein said first doping concentration is different from said second doping concentration level.
8. A semiconductor memory cell comprising:
a floating body region configured to be charged to a level indicative of a state of the memory cell selected from at least first and second states;
a back bias region;
wherein said floating body region acts as a base region of a first bipolar transistor that maintains the state of said memory cell;
wherein said back-bias region acts as a collector region of said first bipolar transistor and has a lower band gap than said floating body region; and
wherein said floating body region acts as a base region of a second bipolar transistor that is used to perform at least one of reading and writing the state of said memory cell.
9. The semiconductor memory cell of claim 8 , wherein said back-bias region is configured to maintain a charge in said floating body region.
10. The semiconductor memory cell of claim 8 , wherein said first and second states are stable states.
11. The semiconductor memory cell of claim 8 , wherein a product of forward emitter gain and impact ionization efficiency of said first bipolar transistor approaches unity when said memory cell is in one of said first and second states, and wherein impact ionization, when said memory cell is in the other of said first and second states is less than the impact ionization when said memory cell is in said one of said first and second states.
12. The semiconductor memory cell of claim 8 , wherein current flow through said first bipolar transistor is larger when said memory cell is in one of said first and second states than when said memory cell is in the other of said first and second states.
13. The semiconductor memory cell of claim 8 , wherein said memory cell states are maintained through impact ionization.
14. A semiconductor memory cell comprising:
a floating body region configured to be charged to a level indicative of a state of the memory cell selected from at least first and second states; and
a back-bias region located below said floating body region;
wherein said back-bias region acts as a collector region of a bipolar transistor that maintains the state of said memory cell and has a lower band gap than said floating body region.
15. The semiconductor memory cell of claim 14 , wherein said first and second states are stable.
16. The semiconductor memory cell of claim 14 , wherein a product of forward emitter gain and impact ionization efficiency of said bipolar transistor that maintains the state of said memory cell approaches unity when said memory cell is in one of said first and second states, and wherein impact ionization, when said memory cell is in the other of said first and second states is less than the impact ionization when said memory cell is in said one of said first and second states.
17. The semiconductor memory cell of claim 14 , wherein current flow through said bipolar transistor is larger when said memory cell is in one said first and second states than when said memory cell is in the other of said first and second states.
18. The semiconductor memory cell of claim 14 , wherein said memory cell states are maintained through impact ionization.
19. The semiconductor memory cell of claim 14 , wherein said back-bias region is configured to generate impact ionization when the memory cell is in one of said first and second states, and wherein said back-bias region is configured so as not to generate impact ionization when the memory cell is in the other of said first and second states.