Tunnel magnetoresistance magnetic sensor with scissor sensor and multi-seed layer configuration
A read head is provided with a scissors sensor. The read head may include a bottom magnetic shield, and a first non-magnetic seed layer, a magnetic seed layer, a second non-magnetic seed layer, an antiferromagnetic layer, a coupling layer, a first free magnetic layer, a spacer layer, and a second free magnetic layer positioned above the bottom magnetic shield, in this order. A pair of magnetic side shield layers may be positioned on respective sides of the second free magnetic layer.
1. A magnetic sensor comprising:
a first seed layer, a magnetic seed layer, a second seed layer, an antiferromagnetic layer, a coupling layer, a first free magnetic layer, a spacer layer, and a second free magnetic layer positioned in this order;
wherein the antiferromagnetic layer provides longitudinal biasing of the first free magnetic layer.
2. A magnetic sensor comprising:
a first seed layer, a magnetic seed layer, a second seed layer, an antiferromagnetic layer, a coupling layer, a first free magnetic layer, a spacer layer, and a second free magnetic layer positioned in this order, wherein
the first seed layer comprises a Ta or a Co-based amorphous alloy, the magnetic seed layer comprises a NiFe alloy, the second seed layer comprises Ru or Ir, the antiferromagnetic layer comprises a MnIr alloy, and the coupling layer comprises double layers of a CoFe alloy and a Co-based amorphous alloy, sandwiched layers of a CoFe alloy and a Ru/CoFe alloy, or sandwiched layers of a NiFe alloy and a Ru/NiFe alloy.
3. A magnetic sensor comprising:
a bottom magnetic shield;
a first seed layer, a magnetic seed layer, a second seed layer, an antiferromagnetic layer, a coupling layer, a first free magnetic layer, a spacer layer, and a second free magnetic layer positioned above the bottom magnetic shield, in this order; and
a pair of magnetic side shield layers positioned on respective sides of the second free magnetic layer;
wherein the antiferromagnetic layer provides longitudinal biasing of the first free magnetic layer.
4. The magnetic sensor of claim 3 , wherein
the first seed layer comprises a Ta-based or a Co-based amorphous alloy, the magnetic seed layer comprises a NiFe alloy, the second seed layer comprises Ru or Ir, the antiferromagnetic layer comprises a MnIr alloy, and the coupling layer comprises double layers of a CoFe alloy and a Co-based amorphous alloy, sandwiched layers of a CoFe alloy and a Ru/CoFe alloy, or sandwiched layers of a NiFe alloy and a Ru/NiFe alloy.
5. The magnetic sensor of claim 4 , wherein
the Co-based amorphous alloy comprises Co and at least one of the elements chosen from Ta, Zr, Nb, Hf, and Ti.
6. The magnetic sensor of claim 4 , wherein the coupling layer comprises at least a Ru component layer.
7. A hard disk drive comprising a read head comprising the magnetic sensor of claim 3 .
8. A magnetic sensor comprising:
a bottom magnetic shield;
a first seed layer, a grain growth seed layer, a magnetic seed layer, a second seed layer, an antiferromagnetic layer, a coupling layer, a first free magnetic layer, a spacer layer, and a second free magnetic layer positioned above the bottom magnetic shield, in this order; and
a pair of magnetic side shield layers positioned on respective sides of the second free magnetic layer.
9. The magnetic sensor of claim 8 , wherein:
the first seed layer comprises a Ta-based or a Co-based amorphous alloy;
the grain growth seed layer comprises an alloy of Ni base fcc element and at least one third transition metal bcc element chosen from Cr, V, Mn, Fe, Ti, and Mo;
the magnetic seed layer comprises a NiFe alloy;
the second seed layer comprises Ru or Ir;
the antiferromagnetic layer comprises a Mnlr alloy; and
the coupling layer comprises double layers of a CoFe alloy and a Co-based amorphous alloy, sandwiched layers of a CoFe alloy and a Ru/CoFe alloy, or sandwiched layers of a NiFe alloy and a Ru/NiFe alloy.
10. The magnetic sensor of claim 9 , wherein
the grain growth seed layer comprises (Ni-20% Fe) or a Ni-based Cr alloy of which Cr content is 35 to 45at %.
11. The magnetic sensor of claim 9 , wherein
the thickness of the antiferromagnetic layer is less than 40 Å.
12. The magnetic sensor of claim 9 , wherein
wherein the MnIr alloy includes L 21 ordered Mn 3 Ir alloy.
13. The magnetic sensor of claim 9 , wherein
the Co-based amorphous alloy comprises Co and at least one of the elements chosen from Ta, Zr, Nb, Hf, and Ti.
14. The magnetic sensor of claim 9 , wherein
the coupling layer comprises at least a Ru component layer.
15. The read head magnetic sensor of claim 14 , wherein
the coupling layer comprises the Ru component layer sandwiched by two respective Co-Fe alloy layers.
16. The magnetic sensor of claim 15 , wherein
the coupling layer further comprises a Co-based amorphous magnetic material layer on each Co-Fe alloy layer.
17. The magnetic sensor of claim 16 , wherein
the Co-based amorphous magnetic material layer comprises Co and at least one of the elements chosen from Ta, Zr, Nb, Hf, and Ti.
18. The magnetic sensor of claim 14 , wherein
the coupling layer comprises the Ru component layer sandwiched by two respective Ni-Fe alloy layers.
19. The magnetic sensor of claim 14 , wherein
a pinned layer is positioned between the coupling layer and the antiferromagnetic layer.
20. The magnetic sensor of claim 19 , wherein
the pinned layer comprises a Co—Fe alloy.
21. A hard disk drive comprising a read head comprising the magnetic sensor of claim 8 .
22. A magnetic sensor comprising:
a bottom magnetic shield; and
a first seed layer, a magnetic seed layer, a second seed layer, an antiferromagnetic layer, a coupling layer, a first free magnetic layer, a spacer layer, and a second free magnetic layer positioned above the bottom magnetic shield, in this order, wherein
a pair of magnetic side shield layers positioned on respective sides of the second free magnetic layer,
the first seed layer comprises a Ta or a Co-based amorphous alloy, the magnetic seed layer comprises a NiFe alloy, the second seed layer comprises Ru or Ir, the antiferromagnetic layer comprises a Mnlr alloy, and the coupling layer comprises double layers of a CoFe alloy and a Co-based amorphous alloy, sandwiched layers of a CoFe alloy and a Ru/CoFe alloy, or sandwiched layers of a NiFe alloy and a Ru/NiFe alloy.