Thin-film transistor, method of fabricating thin-film transistor, and display device
View Patent ↗A thin-film transistor includes: an oxide semiconductor layer having a channel region, a source region, and a drain region; a gate insulating layer disposed above the oxide semiconductor layer; a gate electrode disposed at a position that is above the gate insulating layer and opposing the channel region; and a metal oxide layer stacked on the oxide semiconductor layer and in contact with the source region and the drain region. The metal oxide layer includes, as a main component, an oxide of a second metal whose bond dissociation energy with oxygen is greater than that of a first metal included in the oxide semiconductor layer. A first concentration ratio of oxygen to the second metal in an interface layer between the metal oxide layer and the oxide semiconductor layer is greater than a second concentration ratio of the same in a bulk layer of the metal oxide layer.
1. A thin-film transistor comprising:
an oxide semiconductor layer having a channel region, a source region, and a drain region, the source region and the drain region each having a resistivity lower than a resistivity of the channel region;
a gate insulating layer disposed above the oxide semiconductor layer;
a gate electrode disposed at a position that is above the gate insulating layer and opposing the channel region; and
a metal oxide layer disposed on the gate electrode and the oxide semiconductor layer, the metal oxide layer being in contact with the source region and the drain region of the oxide semiconductor layer,
wherein the metal oxide layer includes, as a main component, an oxide of a second metal whose bond dissociation energy with oxygen is greater than a bond dissociation energy with oxygen of a first metal included in the oxide semiconductor layer,
in the source region and the drain region, a first concentration ratio of oxygen to the second metal in an interface layer between the metal oxide layer and the oxide semiconductor layer is greater than a second concentration ratio of oxygen to the second metal in a bulk layer of the metal oxide layer, and
in the source region and the drain region, the first concentration ratio of oxygen to the second metal increases with progression in a depthwise direction of the interface layer, the depthwise direction extending from the bulk layer of the metal oxide layer toward the oxide semiconductor layer, the bulk layer extending along an upper surface of the interface layer throughout the source region and the drain region of the oxide semiconductor layer.
2. The thin-film transistor according to claim 1 , wherein
the second metal is aluminum, and
the first concentration ratio is 0.6 or less.
3. The thin-film transistor according to claim 1 , wherein
the metal oxide layer has a film thickness of 10 nm or more.
4. The thin-film transistor according to claim 1 , wherein
the second metal is aluminum, and
the metal oxide layer has a film density of 2.7 g/cm 3 or less.
5. The thin-film transistor according to claim 1 , wherein
the first metal is one of indium, gallium, and zinc.
6. The thin-film transistor according to claim 1 , wherein
side surfaces of the gate electrode, the gate insulating layer, and the channel region are flush with one another.
7. A display device comprising the thin-film transistor according to claim 1 .
8. A thin-film transistor comprising:
an oxide semiconductor layer having a channel region, a source region, and a drain region, the source region and the drain region each having a resistivity lower than a resistivity of the channel region;
a gate insulating layer disposed above the oxide semiconductor layer;
a gate electrode disposed at a position that is above the gate insulating layer and opposing the channel region; and
a metal oxide layer disposed on the gate electrode and the oxide semiconductor layer, the metal oxide layer being in contact with the source region and the drain region of the oxide semiconductor layer,
wherein the metal oxide layer includes, as a main component, an oxide of a second metal whose bond dissociation energy with oxygen is greater than a bond dissociation energy with oxygen of a first metal included in the oxide semiconductor layer,
an interface layer including portions of the metal oxide layer and the oxide semiconductor layer includes a region whose concentration ratio of oxygen to the second metal is greater than a concentration ratio of oxygen to the second metal in a bulk layer of the metal oxide layer, and
in the interface layer, the concentration ratio of oxygen to the second metal increases with progression in a depthwise direction of the interface layer, the depthwise direction extending from the metal oxide layer toward the oxide semiconductor layer.
9. The thin-film transistor according to claim 8 , wherein
the second metal is aluminum.
10. The thin-film transistor according to claim 8 , wherein
the first metal is one of indium, gallium, and zinc.
11. A display device comprising the thin-film transistor according to claim 8 .